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Compact beam shaping design based on polarization plane multiplexing of semiconductor lasers

Applied optics (2004), 2022-10, Vol.61 (30), p.8994

2022

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High-accuracy solution of the Dirac equation for three-dimensional hydrogen atom using a variationally optimized diagonalization method

Chemical physics, 2024-03, Vol.579, p.112192, Article 112192

Wu, Shudong

2024

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Comparison of four basis sets on calculating exciton states in a suspended monolayer MoS2 using a variationally optimized diagonalization method

Physica. B, Condensed matter, 2023-10, Vol.666, p.415081, Article 415081

Wu, Shudong

2023

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Anisotropic exciton states and excitonic absorption spectra in a freestanding monolayer black phosphorus

Physica. E, Low-dimensional systems & nanostructures, 2022-07, Vol.141, p.115238, Article 115238

Wu, Shudong

2022

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Performance Enhancement of Blue InGaN Light-Emitting Diodes With a GaN-AlGaN-GaN Last Barrier and Without an AlGaN Electron Blocking Layer

IEEE journal of quantum electronics, 2014-04, Vol.50 (4), p.261-266

2014

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Electronic structure and terahertz intersubband absorption spectra of phosphorus donor in silicon using a variationally optimized diagonalization method

Physica. E, Low-dimensional systems & nanostructures, 2023-01, Vol.146, p.115535, Article 115535

Wu, Shudong

2023

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Exciton polarizability and absorption spectra in CdSe/ZnS nanocrystal quantum dots in electric fields

Journal of applied physics, 2013-07, Vol.114 (4)

2013

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Rectifying resistance switching behaviors of SnO2 microsphere films modulated by top electrodes

Current Applied Physics, 2020, 20(3), , pp.431-437

2020

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Thermal dependence of the optical gain and threshold current density of GaInNAs/GaAs/AlGaAs quantum well lasers

Journal of applied physics, 2011-12, Vol.110 (12), p.123109-123109-4

2011

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Advantages of InGaN/GaN Light-Emitting Diodes With GaN-InGaN Last Barrier

Journal of display technology, 2016-06, Vol.12 (6), p.594-598

2016

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Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

Nanomaterials (Basel, Switzerland), 2021-08, Vol.11 (8), p.2070

2021

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Tuning intersubband absorption in a shallow InAs/InP quantum wire via a transverse tilted magnetic field

Physica. B, Condensed matter, 2013-11, Vol.428, p.1-4

2013

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The Uptake of Prevention of Mother-to-Child HIV Transmission Programs in China: A Systematic Review and Meta-Analysis

PloS one, 2015-08, Vol.10 (8), p.e0135068-e0135068

2015

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Electron Confinement and Hole Injection Improvement in InGaN/GaN Light-Emitting Diodes With Graded-Composition Last Quantum Barrier and Without Electron Blocking Layer

Journal of display technology, 2015-09, Vol.11 (9), p.753-758

2015

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High Resolution Synthetic Aperture Ladar Imaging at 12.9 m Distance

Guangxué xuébào, 2015-12, Vol.35 (12), p.1228002

2015

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Electronic structures in a CdSe spherical quantum dot in a magnetic field: Diagonalization method and variational method

Journal of applied physics, 2012-03, Vol.111 (6), p.063711-063711-10

2012

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Exciton binding energy and excitonic absorption spectra in a parabolic quantum wire under transverse electric field

Physica. B, Condensed matter, 2011-12, Vol.406 (24), p.4634-4638

Wu, Shudong

2011

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Investigation on Image Formation of Wide Swath Synthetic Aperture Ladar Using Non-Symmetric Beam-Pattern Illumination

Guangxué xuébào, 2015-03, Vol.35 (3), p.328003

2015

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Quantum entanglement in two spatial dimensions of rectangular quantum wires

Physica. E, Low-dimensional systems & nanostructures, 2020-04, Vol.118, p.113948, Article 113948

2020

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Gate control of quantum dot-based electron spin–orbit qubits

Physics letters. A, 2018-07, Vol.382 (29), p.1922-1932

2018

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Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

Journal of applied physics, 2015-08, Vol.118 (8)

2015

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Unintentional Source Incorporation in Plasma-Assisted Molecular Beam Epitaxy

Japanese Journal of Applied Physics, 2009-12, Vol.48 (12), p.125501

2009

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The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells

Physica. E, Low-dimensional systems & nanostructures, 2009-09, Vol.41 (9), p.1656-1660

2009

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Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN–GaN–InGaN barriers

Journal of applied physics, 2021-11, Vol.130 (18)

2021

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Excitonic effects and related properties in semiconductor nanostructures: roles of size and dimensionality

Materials research express, 2017-08, Vol.4 (8), p.85017

2017

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Compact beam shaping design based on polarization plane multiplexing of semiconductor lasers

High-accuracy solution of the Dirac equation for three-dimensional hydrogen atom using a variationally optimized diagonalization method

Comparison of four basis sets on calculating exciton states in a suspended monolayer MoS2 using a variationally optimized diagonalization method

Anisotropic exciton states and excitonic absorption spectra in a freestanding monolayer black phosphorus

Performance Enhancement of Blue InGaN Light-Emitting Diodes With a GaN-AlGaN-GaN Last Barrier and Without an AlGaN Electron Blocking Layer

Electronic structure and terahertz intersubband absorption spectra of phosphorus donor in silicon using a variationally optimized diagonalization method

Exciton polarizability and absorption spectra in CdSe/ZnS nanocrystal quantum dots in electric fields

Rectifying resistance switching behaviors of SnO2 microsphere films modulated by top electrodes

Thermal dependence of the optical gain and threshold current density of GaInNAs/GaAs/AlGaAs quantum well lasers

Advantages of InGaN/GaN Light-Emitting Diodes With GaN-InGaN Last Barrier

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

Tuning intersubband absorption in a shallow InAs/InP quantum wire via a transverse tilted magnetic field

The Uptake of Prevention of Mother-to-Child HIV Transmission Programs in China: A Systematic Review and Meta-Analysis

Electron Confinement and Hole Injection Improvement in InGaN/GaN Light-Emitting Diodes With Graded-Composition Last Quantum Barrier and Without Electron Blocking Layer

High Resolution Synthetic Aperture Ladar Imaging at 12.9 m Distance

Electronic structures in a CdSe spherical quantum dot in a magnetic field: Diagonalization method and variational method

Exciton binding energy and excitonic absorption spectra in a parabolic quantum wire under transverse electric field

Investigation on Image Formation of Wide Swath Synthetic Aperture Ladar Using Non-Symmetric Beam-Pattern Illumination

Quantum entanglement in two spatial dimensions of rectangular quantum wires

Gate control of quantum dot-based electron spin–orbit qubits

Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

Unintentional Source Incorporation in Plasma-Assisted Molecular Beam Epitaxy

The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells

Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN–GaN–InGaN barriers

Excitonic effects and related properties in semiconductor nanostructures: roles of size and dimensionality

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