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Green InGaN Quantum Dots Breaking through Efficiency and Bandwidth Bottlenecks of Micro‐LEDs

Laser & photonics reviews, 2021-05, Vol.15 (5), p.n/a

2021

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Fabrication and Characterization of Flexible AlGaN/GaN HEMTs on Kapton Tape

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3320-3324

2021

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High-Pixel-Density 960 × 540 Flip-Chip AlGaInP Red MicroLED Display

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.6206-6211

2022

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Dennard Scaling in Optoelectronics: Scientific Challenges and Countermeasures of Micro‐LEDs for Displays

Laser & photonics reviews, 2022-12, Vol.16 (12), p.n/a

2022

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Parallel Mini/Micro-LEDs Transmitter: Size-Dependent Effect and Gbps Multi-User Visible Light Communication

Journal of lightwave technology, 2022-04, Vol.40 (8), p.2329-2340

2022

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A High-Speed Visible Light Communication System Using Pairs of Micro-Size LEDs

IEEE photonics technology letters, 2021-09, Vol.33 (18), p.1026-1029

2021

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High-Speed Light-Emitting Diodes Emitting at 500 nm With 463-MHz Modulation Bandwidth

IEEE electron device letters, 2014-05, Vol.35 (5), p.563-565

2014

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1.3 GHz E-O bandwidth GaN-based micro-LED for multi-gigabit visible light communication

Photonics research (Washington, DC), 2021-05, Vol.9 (5), p.792

2021

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Improved DC and RF Performance of Novel MIS p-GaN-Gated HEMTs by Gate-All-Around Structure

IEEE electron device letters, 2020-05, Vol.41 (5), p.1-1

2020

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Solution-Processed Small-Molecule Bulk Heterojunction Ambipolar Transistors

Advanced functional materials, 2014-04, Vol.24 (14), p.2057-2063

2014

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3200 ppi Matrix-Addressable Blue MicroLED Display

Micromachines (Basel), 2022-08, Vol.13 (8), p.1350

2022

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Real-Time Multi-User Video Optical Wireless Transmission Based on a Parallel Micro-LEDs Bulb

IEEE photonics journal, 2021-06, Vol.13 (3), p.1-11

2021

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1.7 to 2.3 Gbps OOK LED VLC Transmission Based on 4 × 4 Color-Polarization-Multiplexing at Extremely Low Illumination

IEEE photonics journal, 2019-08, Vol.11 (4), p.1-6

2019

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Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes

Applied physics letters, 2015-11, Vol.107 (18)

2015

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Large-Area Planar Wavelength-Extended InGaAs p-i-n Photodiodes Using Rapid Thermal Diffusion With Spin-On Dopant Technique

IEEE electron device letters, 2015-08, Vol.36 (8), p.820-822

2015

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Suppression of Current Leakage Along Mesa Surfaces in GaN-Based p-i-n Diodes

IEEE electron device letters, 2015-09, Vol.36 (9), p.932-934

2015

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Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing

Advanced materials (Weinheim), 2009-12, Vol.21 (47), p.4845-4849

2009

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Highly Uniform Photo-Sensitivity of Large-Area Planar InGaAs p-i-n Photodiodes With Low Specific Contact Resistance of Gallium Zinc Oxide

IEEE electron device letters, 2015-10, Vol.36 (10), p.1066-1068

2015

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Design of Bidirectional and Low Power Consumption Gate Driver in Amorphous Silicon Technology for TFT-LCD Application

Journal of display technology, 2013-02, Vol.9 (2), p.91-99

2013

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Using Two-Step Mesa to Prevent the Effects of Sidewall Defects on the GaN p-i-n Diodes

IEEE journal of quantum electronics, 2015-10, Vol.51 (10), p.1-6

2015

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High Gamma Value 3D-Stackable HK/MG-Stacked Tri-Gate Nanowire Poly-Si FETs With Embedded Source/Drain and Back Gate Using Low Thermal Budget Green Nanosecond Laser Crystallization Technology

IEEE electron device letters, 2016-05, Vol.37 (5), p.533-536

2016

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Enhanced Light Extraction Efficiency of GaN-Based LEDs With 3-D Colloidal-Photonic-Crystal Bottom Reflector

IEEE photonics technology letters, 2012-08, Vol.24 (15), p.1298-1300

2012

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Large-Area Planar InGaAs p-i-n Photodiodes With Mg Driven-in by Rapid Thermal Diffusion

IEEE electron device letters, 2014-12, Vol.35 (12), p.1278-1280

2014

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Recent progress in low-temperature-process monolithic three dimension technology

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4

2018

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Improved contact characteristics of laser-annealed p-GaN coated with Ni films

Journal of applied physics, 2015-08, Vol.118 (8)

2015

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Green InGaN Quantum Dots Breaking through Efficiency and Bandwidth Bottlenecks of Micro‐LEDs

Fabrication and Characterization of Flexible AlGaN/GaN HEMTs on Kapton Tape

High-Pixel-Density 960 × 540 Flip-Chip AlGaInP Red MicroLED Display

Dennard Scaling in Optoelectronics: Scientific Challenges and Countermeasures of Micro‐LEDs for Displays

Parallel Mini/Micro-LEDs Transmitter: Size-Dependent Effect and Gbps Multi-User Visible Light Communication

A High-Speed Visible Light Communication System Using Pairs of Micro-Size LEDs

High-Speed Light-Emitting Diodes Emitting at 500 nm With 463-MHz Modulation Bandwidth

1.3 GHz E-O bandwidth GaN-based micro-LED for multi-gigabit visible light communication

Improved DC and RF Performance of Novel MIS p-GaN-Gated HEMTs by Gate-All-Around Structure

Solution-Processed Small-Molecule Bulk Heterojunction Ambipolar Transistors

3200 ppi Matrix-Addressable Blue MicroLED Display

Real-Time Multi-User Video Optical Wireless Transmission Based on a Parallel Micro-LEDs Bulb

1.7 to 2.3 Gbps OOK LED VLC Transmission Based on 4 × 4 Color-Polarization-Multiplexing at Extremely Low Illumination

Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes

Large-Area Planar Wavelength-Extended InGaAs p-i-n Photodiodes Using Rapid Thermal Diffusion With Spin-On Dopant Technique

Suppression of Current Leakage Along Mesa Surfaces in GaN-Based p-i-n Diodes

Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing

Highly Uniform Photo-Sensitivity of Large-Area Planar InGaAs p-i-n Photodiodes With Low Specific Contact Resistance of Gallium Zinc Oxide

Design of Bidirectional and Low Power Consumption Gate Driver in Amorphous Silicon Technology for TFT-LCD Application

Using Two-Step Mesa to Prevent the Effects of Sidewall Defects on the GaN p-i-n Diodes

High Gamma Value 3D-Stackable HK/MG-Stacked Tri-Gate Nanowire Poly-Si FETs With Embedded Source/Drain and Back Gate Using Low Thermal Budget Green Nanosecond Laser Crystallization Technology

Enhanced Light Extraction Efficiency of GaN-Based LEDs With 3-D Colloidal-Photonic-Crystal Bottom Reflector

Large-Area Planar InGaAs p-i-n Photodiodes With Mg Driven-in by Rapid Thermal Diffusion

Recent progress in low-temperature-process monolithic three dimension technology

Improved contact characteristics of laser-annealed p-GaN coated with Ni films

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