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Facts and Myths of Dielectric Breakdown Processes-Part I: Statistics, Experimental, and Physical Acceleration Models

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4523-4534

Wu, Ernest Y.

2019

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Facts and Myths of Dielectric Breakdown Processes-Part II: Post-Breakdown and Variability

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4535-4545

Wu, Ernest Y.

2019

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The Schottky emission effect: A critical examination of a century-old model

Journal of applied physics, 2022-07, Vol.132 (2)

2022

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Detecting the phylogenetic signal of glacial refugia in a bryodiversity hotspot outside the tropics

Diversity & distributions, 2022-12, Vol.28 (12), p.2681-2695

2022

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Modeling the impact of soundscape drivers on perceived birdsongs in urban forests

Journal of cleaner production, 2021-04, Vol.292, p.125315, Article 125315

2021

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Long-insert sequence capture detects high copy numbers in a defence-related beta-glucosidase gene βglu-1 with large variations in white spruce but not Norway spruce

BMC genomics, 2024-01, Vol.25 (1), p.118-118, Article 118

2024

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Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach

Applied physics letters, 2013-10, Vol.103 (15)

2013

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Reversing A Decades‐Long Scaling Law of Dielectric Breakdown using Hydrogen‐Plasma‐Treated HfO2 ReRAM Devices

Advanced electronic materials, 2023-10, Vol.9 (10), p.n/a

2023

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Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

Applied physics letters, 2016-01, Vol.108 (1)

2016

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Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy

IEEE electron device letters, 2021-06, Vol.42 (6), p.828-831

2021

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An Inventory of Bryophytes on the Summit of Pink Mountain (Peace River District, British Columbia, Canada)

Western North American naturalist, 2018-04, Vol.78 (1), p.17-25

2018

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Reliability Wearout Mechanisms in Advanced CMOS Technologies

1, 2009

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Filament Localization and Characterization in Hf02 ReRAM Cells using Laser Stimulation

ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC), 2022, p.293-296

2022

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An Effective Correction Methodology for Interference of Stress-Induced Leakage Current in TDDB Evaluation of High- k Dielectrics

IEEE electron device letters, 2012-02, Vol.33 (2), p.191-193

Wu, E. Y.

2012

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Generalized hydrogen release-reaction model for the breakdown of modern gate dielectrics

Journal of applied physics, 2013-07, Vol.114 (1)

2013

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Quantum Mechanical Connection of Schottky Emission Process and Its implications on Breakdown Methodology and Conduction Modeling for BEOL Low-k Dielectrics

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.10A.4-1-10A.4-8

2022

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Analytical Cell-Based Model for the Breakdown Statistics of Multilayer Insulator Stacks

IEEE electron device letters, 2009-12, Vol.30 (12), p.1359-1361

2009

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Role of lncRNAs in cis‐ and trans‐regulatory responses to salt in Populus trichocarpa

The Plant journal : for cell and molecular biology, 2022-05, Vol.110 (4), p.978-993

2022

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An Effective Correction Methodology for Interference of Stress-Induced Leakage Current in TDDB Evaluation of High-κ Dielectrics

IEEE electron device letters, 2012-02, Vol.33 (2), p.191-193

WU, Ernest Y

2012

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Reversing A Decades‐Long Scaling Law of Dielectric Breakdown using Hydrogen‐Plasma‐Treated HfO 2 ReRAM Devices

Advanced electronic materials, 2023-10, Vol.9 (10)

2023

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Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further Scaling

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.2A.1-1-2A.1-6

2024

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General Statistical Model for Dielectric Breakdown Including Reverse Area Scaling - The Role of Area-Dependent Dynamic Competition

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-8

2024

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Ultra-thin oxide reliability for ULSI applications

Semiconductor science and technology, 2000-05, Vol.15 (5), p.425-435

2000

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Time-dependent clustering model versus combination-based approach for BEOL/MOL and FEOL non-uniform dielectric breakdown: Similarities and disparities

2014 IEEE International Reliability Physics Symposium, 2014, p.5B.2.1-5B.2.7

2014

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Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics)

Japanese Journal of Applied Physics, 2020-07, Vol.59 (SM), p.SM0803

2020

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Facts and Myths of Dielectric Breakdown Processes-Part I: Statistics, Experimental, and Physical Acceleration Models

Facts and Myths of Dielectric Breakdown Processes-Part II: Post-Breakdown and Variability

The Schottky emission effect: A critical examination of a century-old model

Detecting the phylogenetic signal of glacial refugia in a bryodiversity hotspot outside the tropics

Modeling the impact of soundscape drivers on perceived birdsongs in urban forests

Long-insert sequence capture detects high copy numbers in a defence-related beta-glucosidase gene βglu-1 with large variations in white spruce but not Norway spruce

Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach

Reversing A Decades‐Long Scaling Law of Dielectric Breakdown using Hydrogen‐Plasma‐Treated HfO2 ReRAM Devices

Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy

An Inventory of Bryophytes on the Summit of Pink Mountain (Peace River District, British Columbia, Canada)

Reliability Wearout Mechanisms in Advanced CMOS Technologies

Filament Localization and Characterization in Hf02 ReRAM Cells using Laser Stimulation

An Effective Correction Methodology for Interference of Stress-Induced Leakage Current in TDDB Evaluation of High- k Dielectrics

Generalized hydrogen release-reaction model for the breakdown of modern gate dielectrics

Quantum Mechanical Connection of Schottky Emission Process and Its implications on Breakdown Methodology and Conduction Modeling for BEOL Low-k Dielectrics

Analytical Cell-Based Model for the Breakdown Statistics of Multilayer Insulator Stacks

Role of lncRNAs in cis‐ and trans‐regulatory responses to salt in Populus trichocarpa

An Effective Correction Methodology for Interference of Stress-Induced Leakage Current in TDDB Evaluation of High-κ Dielectrics

Reversing A Decades‐Long Scaling Law of Dielectric Breakdown using Hydrogen‐Plasma‐Treated HfO 2 ReRAM Devices

Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further Scaling

General Statistical Model for Dielectric Breakdown Including Reverse Area Scaling - The Role of Area-Dependent Dynamic Competition

Ultra-thin oxide reliability for ULSI applications

Time-dependent clustering model versus combination-based approach for BEOL/MOL and FEOL non-uniform dielectric breakdown: Similarities and disparities

Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics)

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