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Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT

Physica status solidi. A, Applications and materials science, 2018-06, Vol.215 (11), p.n/a

2018

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Excessive gestational weight gain and emotional eating are positively associated with postpartum depressive symptoms among taiwanese women

BMC women's health, 2023-09, Vol.23 (1), p.1-464, Article 464

2023

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High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

IEEE electron device letters, 2018-07, Vol.39 (7), p.991-994

2018

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IEEE_Xplore

High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications

IEEE electron device letters, 2017-06, Vol.38 (6), p.771-774

2017

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IEEE_Xplore

Vaginal birth after cesarean section—The world trend and local experience in Taiwan

Taiwanese journal of obstetrics & gynecology, 2017-02, Vol.56 (1), p.41-45

2017

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Associations of the Pre-Pregnancy Body Mass Index and Gestational Weight Gain With Pregnancy Outcomes in Taiwanese Women

Asia Pacific Journal of Clinical Nutrition, 2012-01, Vol.21 (1), p.82-87

2012

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AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications

IEEE electron device letters, 2016-11, Vol.37 (11), p.1395-1398

2016

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IEEE_Xplore

InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment

IEEE electron device letters, 2017-03, Vol.38 (3), p.310-313

2017

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IEEE_Xplore

Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.893-899

2018

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Corrections to "AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications" [Nov 16 1395-1398]

IEEE electron device letters, 2017-01, Vol.38 (1), p.149-149

2017

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IEEE_Xplore

AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.110-115

2018

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Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S)

2016

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InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.856-860

2018

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E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High Vth Stability by Field Plate Engineering

IEEE electron device letters, 2021-09, Vol.42 (9), p.1268-1271

2021

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IEEE_Xplore

Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Prenatal diagnosis and molecular cytogenetic characterization of mosaicism for a small supernumerary marker chromosome derived from chromosome 21q11.2-q21.1 and a literature review

Taiwanese journal of obstetrics & gynecology, 2017-08, Vol.56 (4), p.554-557

2017

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Non-genomic immunosuppressive actions of progesterone inhibits PHA-induced alkalinization and activation in T cells

Journal of cellular biochemistry, 2006-09, Vol.99 (1), p.292-304

2006

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Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application

IEEE electron device letters, 2017-08, Vol.38 (8), p.1101-1104

2017

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IEEE_Xplore

Recess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, p.427-430

2019

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IEEE_Xplore

Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack

IEEE journal of the Electron Devices Society, 2022-01, Vol.10, p.525-531

2022

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Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications

Journal of electronic materials, 2020-02, Vol.49 (2), p.1348-1353

2020

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High-Performance LPCVD-SiNx/InAlGaN/GaN MIS-HEMTs With 850-V 0.98- \text \cdot cm2 for Power Device Applications

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.1136-1141

2018

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Detection of Balanced Homologous Acrocentric Rearrangement REA(14Q14Q) and Low-Grade X-Chromosome Mosaicism in a Couple With Repeated Pregnancy Losses

Taiwanese journal of obstetrics & gynecology, 2010-06, Vol.49 (2), p.239-242

2010

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Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates

Jpn J Appl Phys, 2012-02, Vol.51 (2), p.025505-025505-4

2012

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Huge Primary Vaginal Stone in a Recumbent Woman

Taiwanese journal of obstetrics & gynecology, 2005-03, Vol.44 (1), p.80-82

2005

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Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT

Excessive gestational weight gain and emotional eating are positively associated with postpartum depressive symptoms among taiwanese women

High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications

Vaginal birth after cesarean section—The world trend and local experience in Taiwan

Associations of the Pre-Pregnancy Body Mass Index and Gestational Weight Gain With Pregnancy Outcomes in Taiwanese Women

AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications

InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment

Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation

Corrections to "AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications" [Nov 16 1395-1398]

AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants

Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D

E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High Vth Stability by Field Plate Engineering

Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications

Prenatal diagnosis and molecular cytogenetic characterization of mosaicism for a small supernumerary marker chromosome derived from chromosome 21q11.2-q21.1 and a literature review

Non-genomic immunosuppressive actions of progesterone inhibits PHA-induced alkalinization and activation in T cells

Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application

Recess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack

Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications

High-Performance LPCVD-SiNx/InAlGaN/GaN MIS-HEMTs With 850-V 0.98- \text \cdot cm2 for Power Device Applications

Detection of Balanced Homologous Acrocentric Rearrangement REA(14Q14Q) and Low-Grade X-Chromosome Mosaicism in a Couple With Repeated Pregnancy Losses

Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates

Huge Primary Vaginal Stone in a Recumbent Woman

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