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Improvement of conversion efficiency of multicrystalline silicon solar cells by incorporating reactive ion etching texturing

Solar energy materials and solar cells, 2014-08, Vol.127, p.21-26

2014

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Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics

Journal of applied physics, 2002-09, Vol.92 (5), p.2424-2436

2002

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Carrier recombination and differential diode quality factors in the dark forward bias current-voltage characteristics of a - Si : H solar cells

Journal of applied physics, 2005-07, Vol.98 (2), p.024509-024509-10

2005

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Evolutionary phase diagrams for plasma-enhanced chemical vapor deposition of silicon thin films from hydrogen-diluted silane

Applied physics letters, 1999-10, Vol.75 (15), p.2286-2288

1999

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Phase engineering of a-Si:H solar cells for optimized performance

Solar energy, 2004-01, Vol.77 (6), p.877-885

2004

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Intrinsic and light induced gap states in a-Si:H materials and solar cells—effects of microstructure

Thin solid films, 2004-03, Vol.451 (Complete), p.470-475

2004

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Optimization of open circuit voltage in amorphous silicon solar cells with mixed-phase ( amorphous + nanocrystalline ) p -type contacts of low nanocrystalline content

Journal of applied physics, 2007-06, Vol.101 (11), p.114301-114301-7

2007

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Real time analysis of amorphous and microcrystalline silicon film growth by multichannel ellipsometry

Thin solid films, 2000-03, Vol.364 (1-2), p.129-137

2000

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Absence of carrier recombination associated with the defect pool model in intrinsic amorphous silicon layers: Evidence from current–voltage characteristics on p – i – n and n – i – p solar cells

Applied physics letters, 2003-05, Vol.82 (18), p.3023-3025

2003

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Light-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge

Applied physics letters, 2003-11, Vol.83 (18), p.3725-3727

2003

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Maximization of the open circuit voltage for hydrogenated amorphous silicon n–i–p solar cells by incorporation of protocrystalline silicon p -type layers

Applied physics letters, 2002-08, Vol.81 (7), p.1258-1260

2002

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The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film

IEEE electron device letters, 1990-02, Vol.11 (2), p.100-102

1990

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Correlation of real time spectroellipsometry and atomic force microscopy measurements of surface roughness on amorphous semiconductor thin films

Applied physics letters, 1996-08, Vol.69 (9), p.1297-1299

1996

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Optimization of hydrogenated amorphous silicon p–i–n solar cells with two-step i layers guided by real-time spectroscopic ellipsometry

Applied physics letters, 1998-09, Vol.73 (11), p.1526-1528

1998

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A new perspective on the characterization of materials for a-Si:H solar cells

Solar energy materials and solar cells, 2001-02, Vol.66 (1), p.231-237

2001

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Model for the amorphous roughening transition in amorphous semiconductor deposition

Journal of non-crystalline solids, 2006-06, Vol.352 (9-20), p.950-954

2006

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Analysis of Si1-xGex: H thin films with graded composition and structure by real time spectroscopic ellipsometry

Physica status solidi. A, Applications and materials science (Print), 2008, Vol.205 (4), p.892-895

2008

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Optically induced conductivity changes in discharge-produced hydrogenated amorphous silicon

Journal of applied physics, 1980-06, Vol.51 (6), p.3262-3268

1980

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Deposition phase diagrams for Si1−xGex:H from real time spectroscopic ellipsometry

Journal of non-crystalline solids, 2006-06, Vol.352 (9-20), p.1263-1267

2006

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Reversible conductivity changes in discharge-produced amorphous Si

Applied physics letters, 1977-08, Vol.31 (4), p.292-294

1977

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Analytical model for the optical functions of amorphous semiconductors and its applications for thin film solar cells

Thin solid films, 2004-05, Vol.455 (Complete), p.388-392

2004

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Real time spectroscopic ellipsometry for characterization and optimization of amorphous silicon-based solar cell structures

Thin solid films, 1998-02, Vol.313 (1-2), p.469-473

1998

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Extended phase diagrams for guiding plasma-enhanced chemical vapor deposition of silicon thin films for photovoltaics applications

Applied physics letters, 2002-04, Vol.80 (15), p.2666-2668

2002

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The Light Induced Changes in A-Si: H Materials and Solar Cells—Where We are Now

MRS proceedings, 1997, Vol.467, Article 7

Wronski, C. R.

1997

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Internal photoemission of holes and the mobility gap of hydrogenated amorphous silicon

Physical review letters, 1989-09, Vol.63 (13), p.1420-1423

1989

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Improvement of conversion efficiency of multicrystalline silicon solar cells by incorporating reactive ion etching texturing

Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics

Carrier recombination and differential diode quality factors in the dark forward bias current-voltage characteristics of a - Si : H solar cells

Evolutionary phase diagrams for plasma-enhanced chemical vapor deposition of silicon thin films from hydrogen-diluted silane

Phase engineering of a-Si:H solar cells for optimized performance

Intrinsic and light induced gap states in a-Si:H materials and solar cells—effects of microstructure

Optimization of open circuit voltage in amorphous silicon solar cells with mixed-phase ( amorphous + nanocrystalline ) p -type contacts of low nanocrystalline content

Real time analysis of amorphous and microcrystalline silicon film growth by multichannel ellipsometry

Absence of carrier recombination associated with the defect pool model in intrinsic amorphous silicon layers: Evidence from current–voltage characteristics on p – i – n and n – i – p solar cells

Light-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge

Maximization of the open circuit voltage for hydrogenated amorphous silicon n–i–p solar cells by incorporation of protocrystalline silicon p -type layers

The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film

Correlation of real time spectroellipsometry and atomic force microscopy measurements of surface roughness on amorphous semiconductor thin films

Optimization of hydrogenated amorphous silicon p–i–n solar cells with two-step i layers guided by real-time spectroscopic ellipsometry

A new perspective on the characterization of materials for a-Si:H solar cells

Model for the amorphous roughening transition in amorphous semiconductor deposition

Analysis of Si1-xGex: H thin films with graded composition and structure by real time spectroscopic ellipsometry

Optically induced conductivity changes in discharge-produced hydrogenated amorphous silicon

Deposition phase diagrams for Si1−xGex:H from real time spectroscopic ellipsometry

Reversible conductivity changes in discharge-produced amorphous Si

Analytical model for the optical functions of amorphous semiconductors and its applications for thin film solar cells

Real time spectroscopic ellipsometry for characterization and optimization of amorphous silicon-based solar cell structures

Extended phase diagrams for guiding plasma-enhanced chemical vapor deposition of silicon thin films for photovoltaics applications

The Light Induced Changes in A-Si: H Materials and Solar Cells—Where We are Now

Internal photoemission of holes and the mobility gap of hydrogenated amorphous silicon

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