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Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic-Layer Deposition

ACS applied materials & interfaces, 2017-07, Vol.9 (27), p.22676-22684

2017

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Investigations on the bias temperature stabilities of oxide thin film transistors using In-Ga-Zn-O channels prepared by atomic layer deposition

RSC advances, 2018-01, Vol.8 (44), p.2514-252

2018

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Selective deposition contact patterning using atomic layer deposition for the fabrication of crystalline silicon solar cells

Thin solid films, 2014-10, Vol.568, p.1-5

2014

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Ferroelectric YMnO3 thin films grown by metal-organic chemical vapor deposition for metal/ferroelectric/semiconductor field-effect transistors

Thin solid films, 2001-03, Vol.384 (1), p.146-150

2001

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Oxide interfacial phases and the electrical properties of SrBi2Ta2O9 thin films prepared by plasma-enhanced metalorganic chemical vapor deposition

Applied physics letters, 1998-03, Vol.72 (11), p.1374-1376

1998

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Generalized Cage Occupancy Behavior in the Binary Clathrate Hydrates

Journal of physical chemistry. C, 2010-10, Vol.114 (41), p.17960-17963

2010

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Improvement in ferroelectric properties of SrBi2Ta2O9 thin films with Bi2O3 buffer layers by liquid-delivery metalorganic chemical-vapor deposition

Applied physics letters, 2001-09, Vol.79 (10), p.1519-1521

2001

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Structural and electrical properties of HfOxNy and HfO2 gate dielectrics in TaN gated nMOSCAP and nMOSFET devices

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2004-07, Vol.22 (4), p.1755-1758

2004

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Microstructure and Electrical Properties of BLT Films by Chemical Solution Deposition

Integrated ferroelectrics, 2005-01, Vol.70 (1), p.123-130

2005

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Metal/ferroelectric/insulator/semiconductor structure of Pt/SrBi2Ta2O9/YMnO3/Si using YMnO3 as the buffer layer

Applied physics letters, 1999-08, Vol.75 (5), p.722-724

1999

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Ultrathin HfO2 gate dielectric grown by plasma-enhanced chemical vapor deposition using Hf[OC(CH3)3]4 as a precursor in the absence of O2

Journal of materials research, 2003-01, Vol.18 (1), p.60-65

2003

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Effect of ferroelectric switching time on fatigue behaviors of (117)- and (00l)-oriented (Bi,La)4Ti3O12 thin films

Thin solid films, 2005-07, Vol.484 (1-2), p.374-378

2005

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Improvement in tunability and dielectric loss of (Ba0.5Sr0.5)TiO3 capacitors using seed layers on Pt/Ti/SiO2/Si substrates

Journal of materials research, 2002-11, Vol.17 (11), p.2831-2836

2002

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Effect of annealing conditions on the microstructure of RuO2 thin films deposited by metalorganic chemical vapor deposition

Integrated ferroelectrics, 1997-09, Vol.18 (1-4), p.171-182

1997

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Characterizations on the Device Stabilities of the Oxide Thin Film Transistors Using In-Ga-Zn-O Channels Prepared by Atomic-Layer Deposition

2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2018, p.1-4

2018

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Experimental Setup for in Situ Investigation of Phase Changing Behavior in Phase-Change Random-Access Memory Medium by Microfocusing Nanosecond-Time-Resolved Ellipsometry

Japanese Journal of Applied Physics, 2006-08, Vol.45 (8R), p.6452

2006

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Phase Formations and Electrical Properties of Various (Bi, La)4Ti3O12 Thin Films by Chemical Solution Deposition

Journal of electroceramics, 2004-07, Vol.13 (1-3), p.71-75

2004

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Electrical Properties of Dielectric and Ferroelectric Films Prepared by Plasma Enhanced Atomic Layer Deposition

Integrated ferroelectrics, 2002-01, Vol.46 (1), p.275-284

2002

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(Ba, Sr)RuO3 bottom electrode deposited by liqud delivery metalorganic chemical vapor deposition for (Ba, Sr)TiO3 high dielectric

Ferroelectrics (Print), 2002, Vol.271, p.111-116

2002

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Liquid-Delivery Metal-Organic CVD of Strontium Bismuth Tantalate Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 and Bi(C6H5)3 Precursors

Chemical vapor deposition, 2002-09, Vol.8 (5), p.221-225

2002

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Imprint characteristics of SrBi2Ta2O9 thin films deposited by liquid-delivery metal organic chemical vapor deposition

Ferroelectrics (Print), 2002, Vol.271, p.341-346

2002

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Effect of rf power on the growth and electrical properties of SrBi2Ta2O9 thin films by plasma-enhanced metalorganic chemical vapor deposition

Integrated ferroelectrics, 1999, Vol.26 (1-4), p.153-161

1999

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Studies on the Switching Characteristics of Sol-Gel Derived Ferroelectric (Bi,La)4Ti3O12 Thin Films on Pt/Ti/SiO2/Si Structures

Journal of the Korean Physical Society, 2003, 43(51), , pp.903-908

2003

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Electrical properties of hafnium oxide gate dielectric deposited by plasma enhanced chemical vapor deposition

Integrated ferroelectrics, 2001-01, Vol.38 (1-4), p.191-199

2001

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Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications

Applied physics letters, 2007-01, Vol.90 (2)

2007

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Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic-Layer Deposition

Investigations on the bias temperature stabilities of oxide thin film transistors using In-Ga-Zn-O channels prepared by atomic layer deposition

Selective deposition contact patterning using atomic layer deposition for the fabrication of crystalline silicon solar cells

Ferroelectric YMnO3 thin films grown by metal-organic chemical vapor deposition for metal/ferroelectric/semiconductor field-effect transistors

Oxide interfacial phases and the electrical properties of SrBi2Ta2O9 thin films prepared by plasma-enhanced metalorganic chemical vapor deposition

Generalized Cage Occupancy Behavior in the Binary Clathrate Hydrates

Improvement in ferroelectric properties of SrBi2Ta2O9 thin films with Bi2O3 buffer layers by liquid-delivery metalorganic chemical-vapor deposition

Structural and electrical properties of HfOxNy and HfO2 gate dielectrics in TaN gated nMOSCAP and nMOSFET devices

Microstructure and Electrical Properties of BLT Films by Chemical Solution Deposition

Metal/ferroelectric/insulator/semiconductor structure of Pt/SrBi2Ta2O9/YMnO3/Si using YMnO3 as the buffer layer

Ultrathin HfO2 gate dielectric grown by plasma-enhanced chemical vapor deposition using Hf[OC(CH3)3]4 as a precursor in the absence of O2

Effect of ferroelectric switching time on fatigue behaviors of (117)- and (00l)-oriented (Bi,La)4Ti3O12 thin films

Improvement in tunability and dielectric loss of (Ba0.5Sr0.5)TiO3 capacitors using seed layers on Pt/Ti/SiO2/Si substrates

Effect of annealing conditions on the microstructure of RuO2 thin films deposited by metalorganic chemical vapor deposition

Characterizations on the Device Stabilities of the Oxide Thin Film Transistors Using In-Ga-Zn-O Channels Prepared by Atomic-Layer Deposition

Experimental Setup for in Situ Investigation of Phase Changing Behavior in Phase-Change Random-Access Memory Medium by Microfocusing Nanosecond-Time-Resolved Ellipsometry

Phase Formations and Electrical Properties of Various (Bi, La)4Ti3O12 Thin Films by Chemical Solution Deposition

Electrical Properties of Dielectric and Ferroelectric Films Prepared by Plasma Enhanced Atomic Layer Deposition

(Ba, Sr)RuO3 bottom electrode deposited by liqud delivery metalorganic chemical vapor deposition for (Ba, Sr)TiO3 high dielectric

Liquid-Delivery Metal-Organic CVD of Strontium Bismuth Tantalate Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 and Bi(C6H5)3 Precursors

Imprint characteristics of SrBi2Ta2O9 thin films deposited by liquid-delivery metal organic chemical vapor deposition

Effect of rf power on the growth and electrical properties of SrBi2Ta2O9 thin films by plasma-enhanced metalorganic chemical vapor deposition

Studies on the Switching Characteristics of Sol-Gel Derived Ferroelectric (Bi,La)4Ti3O12 Thin Films on Pt/Ti/SiO2/Si Structures

Electrical properties of hafnium oxide gate dielectric deposited by plasma enhanced chemical vapor deposition

Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications

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