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Enhanced thermal stability of Ti/TiO2/n-Ge contacts through plasma nitridation of TiO2 interfacial layer

Applied physics letters, 2017-01, Vol.110 (5)

2017

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Low resistivity contact on n-type Ge using low work-function Yb with a thin TiO2 interfacial layer

Applied physics letters, 2016-03, Vol.108 (10)

2016

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(Invited) Group IV Epitaxy Applications for Enabling Advanced Device Scaling

ECS transactions, 2016, Vol.75 (8), p.295-302

2016

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Fin Doping by Hot Implant for 14nm FinFET Technology and Beyond

ECS transactions, 2013-08, Vol.58 (9), p.249-256

2013

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Segmented-channel Si1−xGex/Si pMOSFET for improved ION and reduced variability

2012 Symposium on VLSI Technology (VLSIT), 2012, p.167-168

2012

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In Situ Dry Chemical Clean to Improve NiSi and Ni(Pt)Si Integration

ECS transactions, 2007, Vol.11 (6), p.215-222

2007

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Advantage of Siconi Preclean over Wet Clean for Pre Salicide Applications Beyond 65nm Node

2006 IEEE International Symposium on Semiconductor Manufacturing, 2006, p.393-396

2006

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Fabrication of [Formula Omitted] pMOSFETs Using Corrugated Substrates for Improved [Formula Omitted] and Reduced Layout-Width Dependence

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.153-158

2013

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Fabrication of Si1―xGex/Si pMOSFETs Using Corrugated Substrates for Improved ION and Reduced Layout-Width Dependence

IEEE transactions on electron devices, 2013, Vol.60 (1), p.153-158

2013

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Fabrication of \hbox\hbox/\hbox pMOSFETs Using Corrugated Substrates for Improved I and Reduced Layout-Width Dependence

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.153-158

2013

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Improvement of Si doping of In0.53Ga0.47As fin by heated implant

2015 International Symposium on VLSI Technology, Systems and Applications, 2015, p.1-2

2015

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Epitaxial Growth on High Aspect Ratio Structures

ECS transactions, 2010, Vol.33 (6), p.977-984

2010

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Benefits of segmented Si/SiGe p-channel MOSFETs for analog/RF applications

2013 Symposium on VLSI Technology, 2013, p.T142-T143

2013

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3D MOSCAP Vehicle for Electrical Characterization of Sidewall Dielectrics for 3D Monolithic Integration

ECS transactions, 2011, Vol.35 (2), p.69-81

2011

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(Invited) Group IV Epitaxy Applications for Enabling Advanced Device Scaling

Meeting abstracts (Electrochemical Society), 2016-09, Vol.MA2016-02 (30), p.1995-1995

2016

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Epitaxial Growth on High Aspect Ratio Structures

Meeting abstracts (Electrochemical Society), 2010-07, Vol.MA2010-02 (30), p.1956-1956

2010

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Epitaxial Growth of Si/Si1-xGex Films on Corrugated Substrates for Improved pMOSFET Performance

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 2012, p.1-2

2012

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NMOS contact engineering for CMOS scaling

2015 15th International Workshop on Junction Technology (IWJT), 2015, p.44-49

2015

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Selective Epitaxial Germanium Growth on Silicon - Trench Fill and In Situ Doping

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 2012, p.1-2

2012

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Fin Doping By Hot Implant for 14nm Finfet Technology and Beyond

Meeting abstracts (Electrochemical Society), 2013-10, Vol.MA2013-02 (33), p.2237-2237

2013

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3D MOSCAP Vehicle for Electrical Characterization of Sidewall Dielectrics for 3D Monolithic Integration

Meeting abstracts (Electrochemical Society), 2011-03, Vol.MA2011-01 (16), p.1127-1127

2011

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In Situ Dry Chemical Clean to Improve NiSi and Ni(Pt)Si Integration

Meeting abstracts (Electrochemical Society), 2007-09, Vol.MA2007-02 (25), p.1289-1289

2007

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Enhanced thermal stability of Ti/TiO2/n-Ge contacts through plasma nitridation of TiO2 interfacial layer

Low resistivity contact on n-type Ge using low work-function Yb with a thin TiO2 interfacial layer

(Invited) Group IV Epitaxy Applications for Enabling Advanced Device Scaling

Fin Doping by Hot Implant for 14nm FinFET Technology and Beyond

Segmented-channel Si1−xGex/Si pMOSFET for improved ION and reduced variability

In Situ Dry Chemical Clean to Improve NiSi and Ni(Pt)Si Integration

Advantage of Siconi Preclean over Wet Clean for Pre Salicide Applications Beyond 65nm Node

Fabrication of [Formula Omitted] pMOSFETs Using Corrugated Substrates for Improved [Formula Omitted] and Reduced Layout-Width Dependence

Fabrication of Si1―xGex/Si pMOSFETs Using Corrugated Substrates for Improved ION and Reduced Layout-Width Dependence

Fabrication of \hbox\hbox/\hbox pMOSFETs Using Corrugated Substrates for Improved I and Reduced Layout-Width Dependence

Improvement of Si doping of In0.53Ga0.47As fin by heated implant

Epitaxial Growth on High Aspect Ratio Structures

Benefits of segmented Si/SiGe p-channel MOSFETs for analog/RF applications

3D MOSCAP Vehicle for Electrical Characterization of Sidewall Dielectrics for 3D Monolithic Integration

(Invited) Group IV Epitaxy Applications for Enabling Advanced Device Scaling

Epitaxial Growth on High Aspect Ratio Structures

Epitaxial Growth of Si/Si1-xGex Films on Corrugated Substrates for Improved pMOSFET Performance

NMOS contact engineering for CMOS scaling

Selective Epitaxial Germanium Growth on Silicon - Trench Fill and In Situ Doping

Fin Doping By Hot Implant for 14nm Finfet Technology and Beyond

3D MOSCAP Vehicle for Electrical Characterization of Sidewall Dielectrics for 3D Monolithic Integration

In Situ Dry Chemical Clean to Improve NiSi and Ni(Pt)Si Integration

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