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High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping

Advanced functional materials, 2015-07, Vol.25 (27), p.4219-4227

2015

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Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design

Advanced materials (Weinheim), 2016-02, Vol.28 (5), p.864-870

2016

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Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism

Advanced materials (Weinheim), 2016-07, Vol.28 (26), p.5293-5299

2016

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Wide-Range Controllable n‑Doping of Molybdenum Disulfide (MoS2) through Thermal and Optical Activation

ACS nano, 2015-03, Vol.9 (3), p.2368-2376

2015

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Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization

Journal of alloys and compounds, 2013-06, Vol.561, p.231-233

2013

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Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application

Applied physics letters, 2012-08, Vol.101 (7), p.72104

2012

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Impacts of the Thermal Recovery Process on In-Ga-Zn-O (IGZO) TFTs

IEEE electron device letters, 2014-08, Vol.35 (8), p.835-837

2014

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Reduction of Surface Roughness in Epitaxially Grown Germanium by Controlled Thermal Oxidation

IEEE electron device letters, 2015-04, Vol.36 (4), p.297-299

2015

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IEEE_Xplore

Controllable Nondegenerate p‑Type Doping of Tungsten Diselenide by Octadecyltrichlorosilane

ACS nano, 2015-02, Vol.9 (2), p.1099-1107

2015

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Curing temperature- and concentration-dependent dielectric properties of cross-linked poly-4-vinylphenol (PVP)

Current Applied Physics, 2013, 13(8), , pp.1554-1557

2013

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Theoretical and Experimental Investigation of Graphene/High- \kappa /p-Si Junctions

IEEE electron device letters, 2016-01, Vol.37 (1), p.4-7

2016

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IEEE_Xplore

Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter

Organic electronics, 2013-06, Vol.14 (6), p.1586-1590

2013

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Strain-Induced Pseudoheterostructure Nanowires Confining Carriers at Room Temperature with Nanoscale-Tunable Band Profiles

Nano letters, 2013-07, Vol.13 (7), p.3118-3123

2013

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Metal-induced dopant (boron and phosphorus) activation process in amorphous germanium for monolithic three-dimensional integration

Journal of applied physics, 2009-10, Vol.106 (7), p.074510-074510-6

2009

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Characteristics of Ultrashallow Hetero Indium-Gallium-Zinc-Oxide/Germanium Junction

IEEE electron device letters, 2012-10, Vol.33 (10), p.1363-1365

2012

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IEEE_Xplore

Dopant profile model in a shallow germanium n+/p junction

Journal of the Korean Physical Society, 2013, 63(10), , pp.1855-1858

2013

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Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon

Optics express, 2015-06, Vol.23 (12), p.15816-15823

2015

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N-Channel Germanium MOSFET Fabricated Below 360 °C by Cobalt-Induced Dopant Activation for Monolithic Three-Dimensional-ICs

IEEE electron device letters, 2011-03, Vol.32 (3), p.234-236

2011

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Poly-4-vinylphenol and poly(melamine-co-formaldehyde)-based graphene passivation method for flexible, wearable and transparent electronics

Nanoscale, 2014-04, Vol.6 (7), p.383-3836

2014

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Hydrazine-Based Fermi-Level Depinning Process on Metal/Germanium Schottky Junction

IEEE electron device letters, 2013-05, Vol.34 (5), p.599-601

2013

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IEEE_Xplore

Effects of junction defect healing in Germanium n-MOSFET through thermal annealing

Current Applied Physics, 2015, 15(1), , pp.55-58

2015

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Graphene: Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design (Adv. Mater. 5/2016)

Advanced materials (Weinheim), 2016-02, Vol.28 (5), p.975-975

2016

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Indium gallium zinc oxide (IGZO)-based Ohmic contact formation on n-type gallium antimony (GaSb)

Materials chemistry and physics, 2014-02, Vol.143 (3), p.1536-1539

2014

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Electrical effect of titanium diffusion on amorphous indium gallium zinc oxide

Applied physics letters, 2012-11, Vol.101 (21)

2012

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High-Efficiency p-i-n Photodetectors on Selective-Area-Grown Ge for Monolithic Integration

IEEE electron device letters, 2009-11, Vol.30 (11), p.1161-1163

2009

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IEEE_Xplore

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High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design

Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism

Wide-Range Controllable n‑Doping of Molybdenum Disulfide (MoS2) through Thermal and Optical Activation

Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization

Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application

Impacts of the Thermal Recovery Process on In-Ga-Zn-O (IGZO) TFTs

Reduction of Surface Roughness in Epitaxially Grown Germanium by Controlled Thermal Oxidation

Controllable Nondegenerate p‑Type Doping of Tungsten Diselenide by Octadecyltrichlorosilane

Curing temperature- and concentration-dependent dielectric properties of cross-linked poly-4-vinylphenol (PVP)

Theoretical and Experimental Investigation of Graphene/High- \kappa /p-Si Junctions

Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter

Strain-Induced Pseudoheterostructure Nanowires Confining Carriers at Room Temperature with Nanoscale-Tunable Band Profiles

Metal-induced dopant (boron and phosphorus) activation process in amorphous germanium for monolithic three-dimensional integration

Characteristics of Ultrashallow Hetero Indium-Gallium-Zinc-Oxide/Germanium Junction

Dopant profile model in a shallow germanium n+/p junction

Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon

N-Channel Germanium MOSFET Fabricated Below 360 °C by Cobalt-Induced Dopant Activation for Monolithic Three-Dimensional-ICs

Poly-4-vinylphenol and poly(melamine-co-formaldehyde)-based graphene passivation method for flexible, wearable and transparent electronics

Hydrazine-Based Fermi-Level Depinning Process on Metal/Germanium Schottky Junction

Effects of junction defect healing in Germanium n-MOSFET through thermal annealing

Graphene: Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design (Adv. Mater. 5/2016)

Indium gallium zinc oxide (IGZO)-based Ohmic contact formation on n-type gallium antimony (GaSb)

Electrical effect of titanium diffusion on amorphous indium gallium zinc oxide

High-Efficiency p-i-n Photodetectors on Selective-Area-Grown Ge for Monolithic Integration

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