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Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC), 1994, Vol.1, p.630-633 vol.1

1994

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IEEE_Xplore

Improvement of amorphous-carbon active-layer thin-film light-emitting diodes using room-temperature ultrasound treatment

Applied physics letters, 1999-08, Vol.75 (6), p.760-762

1999

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A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 2007, p.472-616

2007

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IEEE_Xplore

A 0.18μm 3.0V 64Mb non-volatile phase-transition random-access memory (PRAM)

First edition, 2004

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A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

Comparative Study of the Properties of Cu-Cr-Mo System Electrical Contact Material by Sintering and Infiltration Methods

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Effects of ZrO2 and Al2O3 Addition on the Physical Properties of Cu-Mo-Cr Alloy by Liquid Phase Sintering

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A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

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A 0.1- \mu} 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

Production of High-Purity Tantalum Metal Powder for Capacitors Using Self-Propagating High-Temperature Synthesis

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Processor-Based Built-in Self-Optimizer for 90nm Diode-Switch PRAM

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A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

A 0.18-[micro]m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)

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Improvement of amorphous-carbon active-layer thin-film light-emitting diodes using room-temperature ultrasound treatment

A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

A 0.18μm 3.0V 64Mb non-volatile phase-transition random-access memory (PRAM)

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