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Band alignment and electrical properties of Al2O3/ β -Ga2O3 heterojunctions

Applied physics letters, 2014-05, Vol.104 (19)

2014

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Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V

IEEE electron device letters, 2016-02, Vol.37 (2), p.212-215

2016

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Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

Applied physics letters, 2012-12, Vol.101 (26)

2012

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Plasma Rivaroxaban Level in Patients With Early Stages of Chronic Kidney Disease-Relationships With Renal Function and Clinical Events

Frontiers in pharmacology, 2022-05, Vol.13, p.888660-888660

2022

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Interface roughness scattering in ultra-thin N-polar GaN quantum well channels

Applied physics letters, 2012-07, Vol.101 (1)

2012

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Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

Applied physics letters, 2013-09, Vol.103 (12)

2013

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Engineered polycaprolactone–magnesium hybrid biodegradable porous scaffold for bone tissue engineering

Progress in natural science, 2014-10, Vol.24 (5), p.561-567

2014

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Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling

Applied physics letters, 2016-11, Vol.109 (19)

2016

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Common genetic variants regulating ADD3 gene expression alter biliary atresia risk

Journal of hepatology, 2013-12, Vol.59 (6), p.1285-1291

2013

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Cytocompatibility, osseointegration, and bioactivity of three-dimensional porous and nanostructured network on polyetheretherketone

Biomaterials, 2013-12, Vol.34 (37), p.9264-9277

2013

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CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion

IEEE electron device letters, 2012-01, Vol.33 (1), p.41-43

2012

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Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

Semiconductor science and technology, 2013-07, Vol.28 (7), p.74014

2013

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Utilization of international normalized ratio-derived formula to predict plasma rivaroxaban level-Validation study and real-world experience

International journal of laboratory hematology, 2024-07

2024

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Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

IEEE electron device letters, 2018-10, Vol.39 (10), p.1572-1575

2018

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Novel Electrospun Polylactic Acid Nanocomposite Fiber Mats with Hybrid Graphene Oxide and Nanohydroxyapatite Reinforcements Having Enhanced Biocompatibility

Polymers, 2016-08, Vol.8 (8), p.287-287

2016

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Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3

APL materials, 2023-06, Vol.11 (6), p.061113-061113-12

2023

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N-polar GaN∕AlGaN∕GaN high electron mobility transistors

Journal of applied physics, 2007-08, Vol.102 (4)

2007

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N-polar GaN epitaxy and high electron mobility transistors

Semiconductor science and technology, 2013-07, Vol.28 (7), p.74009

2013

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Osteogenic ability of Cu-bearing stainless steel

Journal of biomedical materials research. Part B, Applied biomaterials, 2015-10, Vol.103 (7), p.1433-1444

2015

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Genome-wide copy number analysis uncovers a new HSCR gene: NRG3

PLoS genetics, 2012-05, Vol.8 (5), p.e1002687

2012

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Challenges of contact module integration for GaN-based devices in a Si-CMOS environment

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2014-05, Vol.32 (3)

2014

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Effects of Carbon and Nitrogen Plasma Immersion Ion Implantation on In vitro and In vivo Biocompatibility of Titanium Alloy

ACS applied materials & interfaces, 2013-02, Vol.5 (4), p.1510-1516

2013

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Plasma Surface Functionalized Polyetheretherketone for Enhanced Osseo-Integration at Bone-Implant Interface

ACS applied materials & interfaces, 2016-02, Vol.8 (6), p.3901-3911

2016

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Comprehensive characterization of nitrogen-related defect states in β-Ga2O3 using quantitative optical and thermal defect spectroscopy methods

APL materials, 2024-09, Vol.12 (9), p.091111-091111-8

2024

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Defects properties and vacancy diffusion in Cu2MgSnS4

Journal of semiconductors, 2022-02, Vol.43 (2), p.65-71

2022

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Band alignment and electrical properties of Al2O3/ β -Ga2O3 heterojunctions

Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

Plasma Rivaroxaban Level in Patients With Early Stages of Chronic Kidney Disease-Relationships With Renal Function and Clinical Events

Interface roughness scattering in ultra-thin N-polar GaN quantum well channels

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

Engineered polycaprolactone–magnesium hybrid biodegradable porous scaffold for bone tissue engineering

Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling

Common genetic variants regulating ADD3 gene expression alter biliary atresia risk

Cytocompatibility, osseointegration, and bioactivity of three-dimensional porous and nanostructured network on polyetheretherketone

CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion

Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

Utilization of international normalized ratio-derived formula to predict plasma rivaroxaban level-Validation study and real-world experience

Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

Novel Electrospun Polylactic Acid Nanocomposite Fiber Mats with Hybrid Graphene Oxide and Nanohydroxyapatite Reinforcements Having Enhanced Biocompatibility

Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3

N-polar GaN∕AlGaN∕GaN high electron mobility transistors

N-polar GaN epitaxy and high electron mobility transistors

Osteogenic ability of Cu-bearing stainless steel

Genome-wide copy number analysis uncovers a new HSCR gene: NRG3

Challenges of contact module integration for GaN-based devices in a Si-CMOS environment

Effects of Carbon and Nitrogen Plasma Immersion Ion Implantation on In vitro and In vivo Biocompatibility of Titanium Alloy

Plasma Surface Functionalized Polyetheretherketone for Enhanced Osseo-Integration at Bone-Implant Interface

Comprehensive characterization of nitrogen-related defect states in β-Ga2O3 using quantitative optical and thermal defect spectroscopy methods

Defects properties and vacancy diffusion in Cu2MgSnS4

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