UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 179

Sortiert nach

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

IEEE transactions on electron devices, 2015-07, Vol.62 (7), p.2155-2161

2015

Volltextzugriff (PDF)

Prediction of FinFET Current-Voltage and Capacitance-Voltage Curves Using Machine Learning With Autoencoder

IEEE electron device letters, 2021-02, Vol.42 (2), p.136-139

2021

Volltextzugriff (PDF)

Introduction to Quantum Computing: From a Layperson to a Programmer in 30 Steps

Wong, Hiu Yung

1, 2022

Volltextzugriff (PDF)

Surge current capability of ultra-wide-bandgap Ga2O3 Schottky diodes

Microelectronics and reliability, 2020-11, Vol.114, p.113743, Article 113743

2020

Volltextzugriff (PDF)

Radiation Hardness Study of L G = 20 nm FinFET and Nanowire SRAM Through TCAD Simulation

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2289-2294

2021

Volltextzugriff (PDF)

Design optimization of sub-5 nm node nanosheet field effect transistors to minimize self-heating effects

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2021-01, Vol.39 (1)

2021

Volltextzugriff (PDF)

A Step-by-Step HHL Algorithm Walkthrough to Enhance Understanding of Critical Quantum Computing Concepts

IEEE access, 2023-01, Vol.11, p.1-1

2023

Volltextzugriff (PDF)

TCAD-Based Predictive NBTI Framework for Sub-20-nm Node Device Design Considerations

IEEE transactions on electron devices, 2016-12, Vol.63 (12), p.4624-4631

2016

Volltextzugriff (PDF)

Modified Hurkx band-to-band-tunneling model for accurate and robust TCAD simulations

Microelectronics and reliability, 2020-01, Vol.104, p.113552, Article 113552

2020

Volltextzugriff (PDF)

Improvement of TCAD Augmented Machine Learning using Autoencoder for Semiconductor Variation Identification and Inverse Design

IEEE access, 2020-01, Vol.8, p.1-1

2020

Volltextzugriff (PDF)

A Software-Circuit-Device Co-Optimization Framework for Neuromorphic Inference Circuits

IEEE access, 2022, Vol.10, p.1-1

2022

Volltextzugriff (PDF)

Normally-Off GaN HFET Based on Layout and Stress Engineering

IEEE electron device letters, 2016-12, Vol.37 (12), p.1621-1624

2016

Volltextzugriff (PDF)

Application of Noise to Avoid Overfitting in TCAD Augmented Machine Learning

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, p.351-354

2020

Volltextzugriff (PDF)

TCAD-Machine Learning Framework for Device Variation and Operating Temperature Analysis With Experimental Demonstration

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.992-1000

2020

Volltextzugriff (PDF)

Introduction to Quantum Computing: From a Layperson to a Programmer in 30 Steps

Wong, Hiu Yung

2nd ed. 2024

Volltextzugriff (PDF)

Introduction to Quantum Computing: From a Layperson to a Programmer in 30 Steps

Wong, Hiu Yung

Second edition, 2023

Volltextzugriff (PDF)

Stringer Gate FinFET on Bulk Substrate

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3432-3438

2016

Volltextzugriff (PDF)

Ab Initio Study of HfO2/Ti Interface VO/Oi Frenkel Pair Formation Barrier and VO Interaction With Filament

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.5130-5137

Wong, Hiu Yung

2022

Volltextzugriff (PDF)

Ab Initio Study of HfO 2 /Ti Interface V O /O i Frenkel Pair Formation Barrier and V O Interaction With Filament

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.5130-5137

Wong, Hiu Yung

2022

Volltextzugriff (PDF)

TCAD Framework to Estimate the NBTI Degradation in FinFET and GAA NSFET Under Mechanical Strain

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2019, p.1-4

2019

Volltextzugriff (PDF)

A Wide Temperature Range Unified Undoped Bulk Silicon Electron and Hole Mobility Model

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1979-1983

2022

Volltextzugriff (PDF)

FinFET NBTI degradation reduction and recovery enhancement through hydrogen incorporation and self-heating

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017, p.101-104

2017

Volltextzugriff (PDF)

A physical model of the abnormal behavior of hydrogen-terminated Diamond MESFET

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017, p.333-336

2017

Volltextzugriff (PDF)

Robust cryogenic ab-initio quantum transport simulation for LG = 10 nm nanowire

Solid-state electronics, 2022-11, Vol.197, p.108440, Article 108440

2022

Volltextzugriff (PDF)

Energy Filtering Effect at Source Contact on Ultra-Scaled MOSFETs

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.662-667

2020

Volltextzugriff (PDF)

1 – 25 von 179

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(70)
Mit Volltextzugriff
(160)

Publikationsform

Sprache

Englisch
(178)
Japanisch
(8)
Deutsch
(1)

Erscheinungsjahr

n.n

Thema

Science & Technology
(89)
Technology
(63)
Engineering
(62)
Engineering, Electrical & Electronic
(59)
Physical Sciences
(43)
Physics
(39)
Physics, Applied
(32)
Logic Gates
(20)
Life Sciences & Biomedicine
(19)
Machine Learning
(16)
Physics, Condensed Matter
(16)
Simulation
(15)
Silicon
(13)
Technology Computer-Aided Design
(13)
Humans
(12)
Semiconductor Process Modeling
(12)
Tcad Simulation
(12)
Cad
(11)
Computer Aided Design
(11)
Finfets
(11)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

Prediction of FinFET Current-Voltage and Capacitance-Voltage Curves Using Machine Learning With Autoencoder

Introduction to Quantum Computing: From a Layperson to a Programmer in 30 Steps

Surge current capability of ultra-wide-bandgap Ga2O3 Schottky diodes

Radiation Hardness Study of L G = 20 nm FinFET and Nanowire SRAM Through TCAD Simulation

Design optimization of sub-5 nm node nanosheet field effect transistors to minimize self-heating effects

A Step-by-Step HHL Algorithm Walkthrough to Enhance Understanding of Critical Quantum Computing Concepts

TCAD-Based Predictive NBTI Framework for Sub-20-nm Node Device Design Considerations

Modified Hurkx band-to-band-tunneling model for accurate and robust TCAD simulations

Improvement of TCAD Augmented Machine Learning using Autoencoder for Semiconductor Variation Identification and Inverse Design

A Software-Circuit-Device Co-Optimization Framework for Neuromorphic Inference Circuits

Normally-Off GaN HFET Based on Layout and Stress Engineering

Application of Noise to Avoid Overfitting in TCAD Augmented Machine Learning

TCAD-Machine Learning Framework for Device Variation and Operating Temperature Analysis With Experimental Demonstration

Introduction to Quantum Computing: From a Layperson to a Programmer in 30 Steps

Introduction to Quantum Computing: From a Layperson to a Programmer in 30 Steps

Stringer Gate FinFET on Bulk Substrate

Ab Initio Study of HfO2/Ti Interface VO/Oi Frenkel Pair Formation Barrier and VO Interaction With Filament

Ab Initio Study of HfO 2 /Ti Interface V O /O i Frenkel Pair Formation Barrier and V O Interaction With Filament

TCAD Framework to Estimate the NBTI Degradation in FinFET and GAA NSFET Under Mechanical Strain

A Wide Temperature Range Unified Undoped Bulk Silicon Electron and Hole Mobility Model

FinFET NBTI degradation reduction and recovery enhancement through hydrogen incorporation and self-heating

A physical model of the abnormal behavior of hydrogen-terminated Diamond MESFET

Robust cryogenic ab-initio quantum transport simulation for LG = 10 nm nanowire

Energy Filtering Effect at Source Contact on Ultra-Scaled MOSFETs

Suchergebnisse filtern