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A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime-Part I: Intrinsic Elements

IEEE transactions on electron devices, 2015-09, Vol.62 (9), p.3061-3069

2015

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Linear Increases in Carbon Nanotube Density Through Multiple Transfer Technique

Nano letters, 2011-05, Vol.11 (5), p.1881-1886

2011

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Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction

Journal of applied physics, 2016-07, Vol.120 (1)

2016

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PCM-Based Analog Compute-In-Memory: Impact of Device Non-Idealities on Inference Accuracy

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5585-5591

2021

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Crystallization times of Ge–Te phase change materials as a function of composition

Applied physics letters, 2009-08, Vol.95 (7)

2009

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Improved gradual resistive switching range and 1000× on/off ratio in HfOx RRAM achieved with a Ge2Sb2Te5 thermal barrier

Applied physics letters, 2022-08, Vol.121 (8)

2022

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Variation-aware, reliability-emphasized design and optimization of RRAM using SPICE model

Proceedings of the 2015 Design, Automation & Test in Europe Conference & Exhibition, 2015, p.1425-1430

2015

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Modeling and Analysis of Planar-Gate Electrostatic Capacitance of 1-D FET With Multiple Cylindrical Conducting Channels

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2377-2385

2007

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4 Bits/cell Hybrid 1F1R for High Density Embedded Non-Volatile Memory and its Application for Compute in Memory

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.244-245

2022

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MoS₂ transistors with 1-nanometer gate lengths

Science (American Association for the Advancement of Science), 2016-10, Vol.354 (6308), p.99-102

2016

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Low variability high endurance and low voltage arsenic-free selectors based on GeCTe

2021 IEEE International Electron Devices Meeting (IEDM), 2021, p.28.5.1-28.5.4

2021

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Technology projections of III–V devices down to 11 nm: importance of electrostatics and series resistance

Electronics letters, 2013-06, Vol.49 (13), p.832-833

2013

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Ultralow Voltage Crossbar Nonvolatile Memory Based on Energy-Reversible NEM Switches

IEEE electron device letters, 2009-06, Vol.30 (6), p.626-628

2009

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Synaptic electronics: materials, devices and applications

Nanotechnology, 2013-09, Vol.24 (38), p.382001-382001

2013

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Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length

2020 IEEE International Electron Devices Meeting (IEDM), 2020, p.3.5.1-3.5.4

2020

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A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

IEEE electron device letters, 2012-10, Vol.33 (10), p.1405-1407

2012

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Electrical characterization of germanium p-channel MOSFETs

IEEE electron device letters, 2003-04, Vol.24 (4), p.242-244

2003

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Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate

IEEE electron device letters, 2004-03, Vol.25 (3), p.135-137

2004

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Low-power, high-performance S-NDR oscillators for stereo (3D) vision using directly-coupled oscillator networks

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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A Multi-Aperture Image Sensor With 0.7 [Formula Omitted] Pixels in 0.11 [Formula Omitted] CMOS Technology

IEEE journal of solid-state circuits, 2008-12, Vol.43 (12), p.2990-3005

2008

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Metrics for performance benchmarking of nanoscale Si and carbon nanotube FETs including device nonidealities

IEEE transactions on electron devices, 2006-06, Vol.53 (6), p.1317-1322

2006

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Low-Energy Robust Neuromorphic Computation Using Synaptic Devices

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3489-3494

2012

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Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer

IEEE transactions on electron devices, 2012-01, Vol.59 (1), p.12-19

2012

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Design and materials selection for low power laterally actuating nanoelectromechanical relays

2012 IEEE International SOI Conference (SOI), 2012, p.1-2

2012

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Thermal Boundary Resistance Measurements for Phase-Change Memory Devices

IEEE electron device letters, 2010-01, Vol.31 (1), p.56-58

2010

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A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime-Part I: Intrinsic Elements

Linear Increases in Carbon Nanotube Density Through Multiple Transfer Technique

Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction

PCM-Based Analog Compute-In-Memory: Impact of Device Non-Idealities on Inference Accuracy

Crystallization times of Ge–Te phase change materials as a function of composition

Improved gradual resistive switching range and 1000× on/off ratio in HfOx RRAM achieved with a Ge2Sb2Te5 thermal barrier

Variation-aware, reliability-emphasized design and optimization of RRAM using SPICE model

Modeling and Analysis of Planar-Gate Electrostatic Capacitance of 1-D FET With Multiple Cylindrical Conducting Channels

4 Bits/cell Hybrid 1F1R for High Density Embedded Non-Volatile Memory and its Application for Compute in Memory

MoS₂ transistors with 1-nanometer gate lengths

Low variability high endurance and low voltage arsenic-free selectors based on GeCTe

Technology projections of III–V devices down to 11 nm: importance of electrostatics and series resistance

Ultralow Voltage Crossbar Nonvolatile Memory Based on Energy-Reversible NEM Switches

Synaptic electronics: materials, devices and applications

Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length

A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

Electrical characterization of germanium p-channel MOSFETs

Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate

Low-power, high-performance S-NDR oscillators for stereo (3D) vision using directly-coupled oscillator networks

A Multi-Aperture Image Sensor With 0.7 [Formula Omitted] Pixels in 0.11 [Formula Omitted] CMOS Technology

Metrics for performance benchmarking of nanoscale Si and carbon nanotube FETs including device nonidealities

Low-Energy Robust Neuromorphic Computation Using Synaptic Devices

Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer

Design and materials selection for low power laterally actuating nanoelectromechanical relays

Thermal Boundary Resistance Measurements for Phase-Change Memory Devices

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