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Autonomous Scanning Probe Microscopy in Situ Tip Conditioning through Machine Learning

ACS nano, 2018-06, Vol.12 (6), p.5185-5189

2018

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Lithography for robust and editable atomic-scale silicon devices and memories

Nature communications, 2018-07, Vol.9 (1), p.2778-8, Article 2778

2018

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Time-resolved single dopant charge dynamics in silicon

Nature communications, 2016-10, Vol.7 (1), p.13258-13258, Article 13258

2016

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Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

New journal of physics, 2015-07, Vol.17 (7), p.73023

2015

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Indications of chemical bond contrast in AFM images of a hydrogen-terminated silicon surface

Nature communications, 2017-02, Vol.8 (1), p.14222-14222, Article 14222

2017

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Controlled molecular adsorption on silicon: laying a foundation for molecular devices

Annual review of physical chemistry, 1999-01, Vol.50, p.413-441

Wolkow, R A

1999

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Controlled coupling and occupation of silicon atomic quantum dots at room temperature

Physical review letters, 2009-01, Vol.102 (4), p.046805-046805, Article 046805

2009

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Field regulation of single-molecule conductivity by a charged surface atom

Nature, 2005-06, Vol.435 (7042), p.658-661

2005

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Conductivity of Si(111)-(7×7): the role of a single atomic step

Physical review letters, 2014-06, Vol.112 (24), p.246802-246802, Article 246802

2014

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Charge Control of Surface Dangling Bonds Using Nanoscale Schottky Contacts

ACS nano, 2011-03, Vol.5 (3), p.1984-1989

2011

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Iridium single atom tips fabricated by field assisted reactive gas etching

Applied surface science, 2016-03, Vol.367, p.277-280

2016

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Initiating and Monitoring the Evolution of Single Electrons Within Atom-Defined Structures

Physical review letters, 2018-10, Vol.121 (16), p.166801-166801, Article 166801

2018

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Atomic White-Out: Enabling Atomic Circuitry through Mechanically Induced Bonding of Single Hydrogen Atoms to a Silicon Surface

ACS nano, 2017-09, Vol.11 (9), p.8636-8642

2017

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Ohmic Contact to Two-Dimensional Nanofabricated Silicon Structures with a Two-Probe Scanning Tunneling Microscope

ACS nano, 2021-12, Vol.15 (12), p.19377-19386

2021

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Atomically Precise Manufacturing of Silicon Electronics

ACS nano, 2024-03, Vol.18 (9), p.6766-6816

2024

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Creation and recovery of a W(111) single atom gas field ion source

The Journal of chemical physics, 2012-04, Vol.136 (15), p.154704-154704-4

2012

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Quantum Transport in Gated Dangling-Bond Atomic Wires

Nano letters, 2017-01, Vol.17 (1), p.322-327

2017

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Dispersion Interactions Enable the Self-Directed Growth of Linear Alkane Nanostructures Covalently Bound to Silicon

Journal of the American Chemical Society, 2004-12, Vol.126 (49), p.16048-16050

2004

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Detecting and Directing Single Molecule Binding Events on H‑Si(100) with Application to Ultradense Data Storage

ACS nano, 2020-03, Vol.14 (3), p.2947-2955

2020

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Electrostatic Landscape of a Hydrogen-Terminated Silicon Surface Probed by a Moveable Quantum Dot

ACS nano, 2019-09, Vol.13 (9), p.10566-10575

2019

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Patterning of Vinylferrocene on H−Si(100) via Self-Directed Growth of Molecular Lines and STM-Induced Decomposition

Nano letters, 2002-08, Vol.2 (8), p.807-810

2002

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Ionic charge distributions in silicon atomic surface wires

Nanoscale, 2021-02, Vol.13 (5), p.3237-3245

2021

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Nonlocal conductance modulation by molecules: scanning tunneling microscopy of substituted styrene heterostructures on H-terminated Si(100)

Physical review letters, 2008-09, Vol.101 (10), p.106801-106801, Article 106801

2008

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Time-Resolved Imaging of Negative Differential Resistance on the Atomic Scale

Physical review letters, 2016-12, Vol.117 (27), p.276805-276805

2016

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Single-electron dynamics of an atomic silicon quantum dot on the H-Si(100)-(2×1) surface

Physical review letters, 2014-06, Vol.112 (25), p.256801-256801, Article 256801

2014

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Autonomous Scanning Probe Microscopy in Situ Tip Conditioning through Machine Learning

Lithography for robust and editable atomic-scale silicon devices and memories

Time-resolved single dopant charge dynamics in silicon

Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

Indications of chemical bond contrast in AFM images of a hydrogen-terminated silicon surface

Controlled molecular adsorption on silicon: laying a foundation for molecular devices

Controlled coupling and occupation of silicon atomic quantum dots at room temperature

Field regulation of single-molecule conductivity by a charged surface atom

Conductivity of Si(111)-(7×7): the role of a single atomic step

Charge Control of Surface Dangling Bonds Using Nanoscale Schottky Contacts

Iridium single atom tips fabricated by field assisted reactive gas etching

Initiating and Monitoring the Evolution of Single Electrons Within Atom-Defined Structures

Atomic White-Out: Enabling Atomic Circuitry through Mechanically Induced Bonding of Single Hydrogen Atoms to a Silicon Surface

Ohmic Contact to Two-Dimensional Nanofabricated Silicon Structures with a Two-Probe Scanning Tunneling Microscope

Atomically Precise Manufacturing of Silicon Electronics

Creation and recovery of a W(111) single atom gas field ion source

Quantum Transport in Gated Dangling-Bond Atomic Wires

Dispersion Interactions Enable the Self-Directed Growth of Linear Alkane Nanostructures Covalently Bound to Silicon

Detecting and Directing Single Molecule Binding Events on H‑Si(100) with Application to Ultradense Data Storage

Electrostatic Landscape of a Hydrogen-Terminated Silicon Surface Probed by a Moveable Quantum Dot

Patterning of Vinylferrocene on H−Si(100) via Self-Directed Growth of Molecular Lines and STM-Induced Decomposition

Ionic charge distributions in silicon atomic surface wires

Nonlocal conductance modulation by molecules: scanning tunneling microscopy of substituted styrene heterostructures on H-terminated Si(100)

Time-Resolved Imaging of Negative Differential Resistance on the Atomic Scale

Single-electron dynamics of an atomic silicon quantum dot on the H-Si(100)-(2×1) surface

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