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Technology Scaling Comparison of Flip-Flop Heavy-Ion Single-Event Upset Cross Sections

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4368-4373

2013

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IEEE_Xplore

A Hardened-by-Design Technique for RF Digital Phase-Locked Loops

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3432-3438

2006

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IEEE_Xplore

Time-Domain Reflectometry Measurements of Total-Ionizing-Dose Degradation of n MOSFETs

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4470-4475

2013

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IEEE_Xplore

Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4498-4504

2013

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IEEE_Xplore

Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.22-28, Article 22

2020

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IEEE_Xplore

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Advanced electronic materials, 2018-01, Vol.4 (1), p.n/a

2018

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Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.256-261

2018

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IEEE_Xplore

Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

IEEE transactions on nuclear science, 2021-07, Vol.68 (7), p.1430-1435

2021

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IEEE_Xplore

Scalability of Capacitive Hardening for Flip-Flops in Advanced Technology Nodes

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4394-4398

2013

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IEEE_Xplore

Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.337-343

2019

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IEEE_Xplore

Charge Collection and Charge Sharing in a 130 nm CMOS Technology

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3253-3258

2006

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IEEE_Xplore

Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.363-369

2023

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IEEE_Xplore

Digital Control for Radiation-Hardened Switching Converters in Space

IEEE transactions on aerospace and electronic systems, 2010-04, Vol.46 (2), p.761-770

2010

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IEEE_Xplore

Introduction to modeling of transformers and coupled inductors

IEEE transactions on power electronics, 1995-05, Vol.10 (3), p.349-357

Witulski, A.F.

1995

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IEEE_Xplore

Effects of Temperature and Supply Voltage on SEU- and SET-Induced Errors in Bulk 40-nm Sequential Circuits

IEEE transactions on nuclear science, 2017-08, Vol.64 (8), p.2122-2128

2017

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IEEE_Xplore

Methodology for Identifying Radiation Effects in Robotic Systems With Mechanical and Control Performance Variations

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.184-189

2019

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IEEE_Xplore

Modeling Total-Dose Effects for a Low-Dropout Voltage Regulator

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3223-3231

2006

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IEEE_Xplore

Effects of Total-Ionizing-Dose Irradiation on SEU- and SET-Induced Soft Errors in Bulk 40-nm Sequential Circuits

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.471-476

2017

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IEEE_Xplore

Single Event-Induced Instability in Linear Voltage Regulators

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3506-3511

2006

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IEEE_Xplore

Impact of Temporal Masking of Flip-Flop Upsets on Soft Error Rates of Sequential Circuits

IEEE transactions on nuclear science, 2017-08, Vol.64 (8), p.2098-2106

2017

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IEEE_Xplore

Analysis of Temporal Masking Effects on Master- and Slave-Type Flip-Flop SEUs and Related Applications

IEEE transactions on nuclear science, 2018-08, Vol.65 (8), p.1823-1829

2018

Link zum Volltext
IEEE_Xplore

Ionizing Dose-Tolerant Enhancement-Mode Cascode for High-Voltage Power Devices

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.382-387

2017

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IEEE_Xplore

Total Dose Measurement Circuit Design Based on a Voltage Reference Topology

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.559-566

2017

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IEEE_Xplore

Radiation Hardening of Voltage References Using Chopper Stabilization

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.3064-3071

2015

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IEEE_Xplore

Single-Event Transient Induced Harmonic Errors in Digitally Controlled Ring Oscillators

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3163-3170

2014

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IEEE_Xplore

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Technology Scaling Comparison of Flip-Flop Heavy-Ion Single-Event Upset Cross Sections

A Hardened-by-Design Technique for RF Digital Phase-Locked Loops

Time-Domain Reflectometry Measurements of Total-Ionizing-Dose Degradation of n MOSFETs

Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation

Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

Scalability of Capacitive Hardening for Flip-Flops in Advanced Technology Nodes

Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

Charge Collection and Charge Sharing in a 130 nm CMOS Technology

Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes

Digital Control for Radiation-Hardened Switching Converters in Space

Introduction to modeling of transformers and coupled inductors

Effects of Temperature and Supply Voltage on SEU- and SET-Induced Errors in Bulk 40-nm Sequential Circuits

Methodology for Identifying Radiation Effects in Robotic Systems With Mechanical and Control Performance Variations

Modeling Total-Dose Effects for a Low-Dropout Voltage Regulator

Effects of Total-Ionizing-Dose Irradiation on SEU- and SET-Induced Soft Errors in Bulk 40-nm Sequential Circuits

Single Event-Induced Instability in Linear Voltage Regulators

Impact of Temporal Masking of Flip-Flop Upsets on Soft Error Rates of Sequential Circuits

Analysis of Temporal Masking Effects on Master- and Slave-Type Flip-Flop SEUs and Related Applications

Ionizing Dose-Tolerant Enhancement-Mode Cascode for High-Voltage Power Devices

Total Dose Measurement Circuit Design Based on a Voltage Reference Topology

Radiation Hardening of Voltage References Using Chopper Stabilization

Single-Event Transient Induced Harmonic Errors in Digitally Controlled Ring Oscillators

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