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Electronic structure of BxGa1−xAs alloys using hybrid functionals

Journal of applied physics, 2019-09, Vol.126 (9)

2019

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The carbon state in dilute germanium carbides

Journal of applied physics, 2021-02, Vol.129 (5)

2021

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Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys

Crystals (Basel), 2016-12, Vol.6 (12), p.159-159

2016

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Interband second-order nonlinear optical susceptibility of asymmetric coupled quantum wells

Applied physics letters, 2023-12, Vol.123 (25)

2023

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Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy

Journal of applied physics, 2007-06, Vol.101 (11)

2007

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Mid-IR Gain of Tensile Germanium Waveguide Lasers with SiNx Stress Liners

2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM), 2021, p.1-2

2021

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Band Anticrossing in Dilute Germanium Carbides Using Hybrid Density Functionals

Journal of electronic materials, 2016-04, Vol.45 (4), p.2121-2126

2016

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Recent progress on 1.55-μm dilute-nitride lasers

IEEE journal of quantum electronics, 2007-09, Vol.43 (9-10), p.773-785

2007

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In0.53Ga0.47As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

IEEE electron device letters, 2009-11, Vol.30 (11), p.1128-1130

2009

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Ultralow resistance in situ Ohmic contacts to InGaAs/InP

Applied physics letters, 2008-11, Vol.93 (18), p.183502-183502-3

2008

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High doping effects on in-situ Ohmic contacts to n-InAs

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, p.1-4

2010

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Ge quantum dots encapsulated by AlAs grown by molecular beam epitaxy on GaAs without extended defects

Applied physics letters, 2014-02, Vol.104 (7)

2014

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Self-assembled Ge QDs Formed by High-Temperature Annealing on Al(Ga)As (001)

Journal of electronic materials, 2015-05, Vol.44 (5), p.1338-1343

2015

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Ex situ Ohmic contacts to n-InGaAs

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-07, Vol.28 (4), p.C5-C5I9

2010

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Low-threshold continuous-wave 1.5-μm GaInNAsSb lasers grown on GaAs

IEEE journal of quantum electronics, 2004-06, Vol.40 (6), p.656-664

2004

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Undoing band anticrossing in highly mismatched alloys by atom arrangement

Journal of applied physics, 2024-03, Vol.135 (11)

2024

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The role of Sb in the MBE growth of (GaIn)(NAsSb)

Journal of crystal growth, 2003-04, Vol.251 (1), p.360-366

2003

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Nitrogen plasma optimization for high-quality dilute nitrides

Journal of crystal growth, 2005-05, Vol.278 (1), p.229-233

2005

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InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology

Physica status solidi. C, 2009-06, Vol.6 (6), p.1394-1398

2009

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Effects of different plasma species (atomic N, metastable N2, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy

Applied physics letters, 2007-11, Vol.91 (19)

2007

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Molecular beam epitaxy of highly crystalline GeSnC using CBr4 at low temperatures

Applied physics letters, 2022-09, Vol.121 (12)

2022

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Temperature dependencies of annealing behaviors of GaInNAsSb∕GaNAs quantum wells for long wavelength dilute-nitride lasers

Applied physics letters, 2007-06, Vol.90 (23)

2007

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Improved optical quality of GaNAsSb in the dilute Sb limit

Journal of applied physics, 2005-06, Vol.97 (11), p.113510-113510-5

2005

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Effects of B and In on the band structure of BGa(In)As alloys

Journal of applied physics, 2022-11, Vol.132 (19)

2022

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Growth of tin-free germanium carbon alloys using carbon tetrabromide (CBr4)

Journal of applied physics, 2023-11, Vol.134 (18)

2023

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Electronic structure of BxGa1−xAs alloys using hybrid functionals

The carbon state in dilute germanium carbides

Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys

Interband second-order nonlinear optical susceptibility of asymmetric coupled quantum wells

Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy

Mid-IR Gain of Tensile Germanium Waveguide Lasers with SiNx Stress Liners

Band Anticrossing in Dilute Germanium Carbides Using Hybrid Density Functionals

Recent progress on 1.55-μm dilute-nitride lasers

In0.53Ga0.47As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

Ultralow resistance in situ Ohmic contacts to InGaAs/InP

High doping effects on in-situ Ohmic contacts to n-InAs

Ge quantum dots encapsulated by AlAs grown by molecular beam epitaxy on GaAs without extended defects

Self-assembled Ge QDs Formed by High-Temperature Annealing on Al(Ga)As (001)

Ex situ Ohmic contacts to n-InGaAs

Low-threshold continuous-wave 1.5-μm GaInNAsSb lasers grown on GaAs

Undoing band anticrossing in highly mismatched alloys by atom arrangement

The role of Sb in the MBE growth of (GaIn)(NAsSb)

Nitrogen plasma optimization for high-quality dilute nitrides

InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology

Effects of different plasma species (atomic N, metastable N2, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy

Molecular beam epitaxy of highly crystalline GeSnC using CBr4 at low temperatures

Temperature dependencies of annealing behaviors of GaInNAsSb∕GaNAs quantum wells for long wavelength dilute-nitride lasers

Improved optical quality of GaNAsSb in the dilute Sb limit

Effects of B and In on the band structure of BGa(In)As alloys

Growth of tin-free germanium carbon alloys using carbon tetrabromide (CBr4)

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