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Electronic structure of BxGa1−xAs alloys using hybrid functionals

Journal of applied physics, 2019-09, Vol.126 (9)

2019

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The carbon state in dilute germanium carbides

Journal of applied physics, 2021-02, Vol.129 (5)

2021

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Interband second-order nonlinear optical susceptibility of asymmetric coupled quantum wells

Applied physics letters, 2023-12, Vol.123 (25)

2023

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Mid-IR Gain of Tensile Germanium Waveguide Lasers with SiNx Stress Liners

2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM), 2021, p.1-2

2021

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Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy

Journal of applied physics, 2007-06, Vol.101 (11)

2007

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Band Anticrossing in Dilute Germanium Carbides Using Hybrid Density Functionals

Journal of electronic materials, 2016-04, Vol.45 (4), p.2121-2126

2016

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Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys

Crystals (Basel), 2016-12, Vol.6 (12), p.159-159

2016

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Recent progress on 1.55-μm dilute-nitride lasers

IEEE journal of quantum electronics, 2007-09, Vol.43 (9-10), p.773-785

2007

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In0.53Ga0.47As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

IEEE electron device letters, 2009-11, Vol.30 (11), p.1128-1130

2009

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Ge quantum dots encapsulated by AlAs grown by molecular beam epitaxy on GaAs without extended defects

Applied physics letters, 2014-02, Vol.104 (7)

2014

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Self-assembled Ge QDs Formed by High-Temperature Annealing on Al(Ga)As (001)

Journal of electronic materials, 2015-05, Vol.44 (5), p.1338-1343

2015

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Undoing band anticrossing in highly mismatched alloys by atom arrangement

Journal of applied physics, 2024-03, Vol.135 (11)

2024

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Low-threshold continuous-wave 1.5-μm GaInNAsSb lasers grown on GaAs

IEEE journal of quantum electronics, 2004-06, Vol.40 (6), p.656-664

2004

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Extended Defect Propagation in Highly Tensile-Strained Ge Waveguides

Crystals (Basel), 2017-06, Vol.7 (6), p.157

2017

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Ultralow resistance in situ Ohmic contacts to InGaAs/InP

Applied physics letters, 2008-11, Vol.93 (18), p.183502-183502-3

2008

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The role of Sb in the MBE growth of (GaIn)(NAsSb)

Journal of crystal growth, 2003-04, Vol.251 (1), p.360-366

2003

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Nitrogen plasma optimization for high-quality dilute nitrides

Journal of crystal growth, 2005-05, Vol.278 (1), p.229-233

2005

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Molecular beam epitaxy of highly crystalline GeSnC using CBr4 at low temperatures

Applied physics letters, 2022-09, Vol.121 (12)

2022

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InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology

Physica status solidi. C, 2009-06, Vol.6 (6), p.1394-1398

2009

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Ex situ Ohmic contacts to n-InGaAs

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-07, Vol.28 (4), p.C5-C5I9

2010

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Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned

IEEE electron device letters, 2012-05, Vol.33 (5), p.655-657

2012

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Effects of B and In on the band structure of BGa(In)As alloys

Journal of applied physics, 2022-11, Vol.132 (19)

2022

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Growth of tin-free germanium carbon alloys using carbon tetrabromide (CBr4)

Journal of applied physics, 2023-11, Vol.134 (18)

2023

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Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy

Journal of applied physics, 2023-11, Vol.134 (19)

2023

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High doping effects on in-situ Ohmic contacts to n-InAs

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, p.1-4

2010

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Electronic structure of BxGa1−xAs alloys using hybrid functionals

The carbon state in dilute germanium carbides

Interband second-order nonlinear optical susceptibility of asymmetric coupled quantum wells

Mid-IR Gain of Tensile Germanium Waveguide Lasers with SiNx Stress Liners

Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy

Band Anticrossing in Dilute Germanium Carbides Using Hybrid Density Functionals

Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys

Recent progress on 1.55-μm dilute-nitride lasers

In0.53Ga0.47As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

Ge quantum dots encapsulated by AlAs grown by molecular beam epitaxy on GaAs without extended defects

Self-assembled Ge QDs Formed by High-Temperature Annealing on Al(Ga)As (001)

Undoing band anticrossing in highly mismatched alloys by atom arrangement

Low-threshold continuous-wave 1.5-μm GaInNAsSb lasers grown on GaAs

Extended Defect Propagation in Highly Tensile-Strained Ge Waveguides

Ultralow resistance in situ Ohmic contacts to InGaAs/InP

The role of Sb in the MBE growth of (GaIn)(NAsSb)

Nitrogen plasma optimization for high-quality dilute nitrides

Molecular beam epitaxy of highly crystalline GeSnC using CBr4 at low temperatures

InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology

Ex situ Ohmic contacts to n-InGaAs

Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned

Effects of B and In on the band structure of BGa(In)As alloys

Growth of tin-free germanium carbon alloys using carbon tetrabromide (CBr4)

Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy

High doping effects on in-situ Ohmic contacts to n-InAs

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