UB Paderborn / Katalog / Suche / in CDI

Amplification and noise properties of an erbium-doped multicore fiber amplifier

Optics express, 2011-08, Vol.19 (17), p.16715-16721

2011

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InGaP/GaAs based single and double heterojunction bipolar transistors grown by mombe

Electronics letters, 1992-06, Vol.28 (12), p.1150-1152

1992

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Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application

IEEE electron device letters, 1993-07, Vol.14 (7), p.332-334

1993

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Solid low-bend-loss transmission fibers using resonant suppression of higher-order modes

2008 34th European Conference on Optical Communication, 2008, p.1-2

2008

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200km repeater length transmission of real-time processed 21.2Tb/s (106×200Gb/s) over 1200km fibre

45th European Conference on Optical Communication (ECOC 2019), 2019, p.66

2019

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Broad-band tunable electroabsorption modulated laser for WDM application

IEEE journal of selected topics in quantum electronics, 1997-06, Vol.3 (3), p.960-967

1997

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Suppression of stimulated Raman scattering in a cladding pumped amplifier with an Yb-doped filter fiber

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, 2006, p.1-2

2006

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Alternative group V sources for growth of GaAs and AlGaAs by MOMBE (CBE)

Journal of crystal growth, 1992-11, Vol.124 (1), p.64-69

1992

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A comparison of alane precursors for growth of AlAs and AlGaAs by metalorganic molecular beam epitaxy

Solid-state electronics, 1995-03, Vol.38 (3), p.737-738

1995

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Tunable electroabsorption modulated laser integrated with a bent waveguide distributed-feedback laser

IEEE photonics technology letters, 1997-05, Vol.9 (5), p.563-565

1997

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Small area InGaP emitter/carbon doped GaAs base HBTs grown by mombe

Electronics letters, 1992-11, Vol.28 (24), p.2250-2252

1992

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The impact of impurity incorporation on heterojunction bipolar transistors grown by metalorganic molecular beam epitaxy

Journal of crystal growth, 1994-03, Vol.136 (1), p.11-17

1994

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InP-based single heterojunction bipolar transistors with improved breakdown characteristics

Electronics letters, 1994-07, Vol.30 (14), p.1184-1185

1994

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Ion Beam Processing of InGaAsP

MRS proceedings, 1993, Vol.316, Article 319

1993

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Carbon and tin doped npn and pnp AlGaAs/GaAs HBTs grown by mombe

Electronics letters, 1991-12, Vol.27 (25), p.2391-2393

1991

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Growth of GaAs/AlGaAs HBTs by MOMBE (CBE)

Journal of crystal growth, 1992-05, Vol.120 (1), p.234-239

1992

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Bend insensitive fiber for FTTX applications

2009 Conference on Optical Fiber Communication - incudes post deadline papers, 2009, p.1-3

2009

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High performance buried heterostructure 1.55 /spl mu/m wavelength AlGaInAs/InP multiple quantum well lasers grown entirely by MOVPE technique

Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129), 1998, p.702-705

1998

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Characteristics of Be+ and O+ or H+ co-implantation in GaAs/AlGaAs heterojunction bipolar transistor structures

Journal of applied physics, 1991, Vol.69 (2), p.698-703

1991

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Solid ring-assisted fibers with low bend loss

OECC/ACOFT 2008 - Joint Conference of the Opto-Electronics and Communications Conference and the Australian Conference on Optical Fibre Technology, 2008, p.1-2

2008

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The use of higher order modes in fiber amplifiers

LEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2008, p.785-786

2008

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Resonant coupling for distributed filtering in an optical fiber

31st European Conference on Optical Communications (ECOC 2005), 2005

2005

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Erbium emission in highly doped tellurite and alumina-silica novelty fibers

Optical Fiber Communication Conference, 2004. OFC 2004, 2004, Vol.2, p.3 pp. vol.2

2004

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Yb-doped amplifier fiber with distributed filtering by resonant core-ring coupling

2006 Optical Fiber Communication Conference and the National Fiber Optic Engineers Conference, 2006, p.3 pp.

2006

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Role of the Diffusivity of Be and C in the Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors

Materials science forum, 1992-01, Vol.83-87, p.1557-1562

1992

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Amplification and noise properties of an erbium-doped multicore fiber amplifier

InGaP/GaAs based single and double heterojunction bipolar transistors grown by mombe

Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application

Solid low-bend-loss transmission fibers using resonant suppression of higher-order modes

200km repeater length transmission of real-time processed 21.2Tb/s (106×200Gb/s) over 1200km fibre

Broad-band tunable electroabsorption modulated laser for WDM application

Suppression of stimulated Raman scattering in a cladding pumped amplifier with an Yb-doped filter fiber

Alternative group V sources for growth of GaAs and AlGaAs by MOMBE (CBE)

A comparison of alane precursors for growth of AlAs and AlGaAs by metalorganic molecular beam epitaxy

Tunable electroabsorption modulated laser integrated with a bent waveguide distributed-feedback laser

Small area InGaP emitter/carbon doped GaAs base HBTs grown by mombe

The impact of impurity incorporation on heterojunction bipolar transistors grown by metalorganic molecular beam epitaxy

InP-based single heterojunction bipolar transistors with improved breakdown characteristics

Ion Beam Processing of InGaAsP

Carbon and tin doped npn and pnp AlGaAs/GaAs HBTs grown by mombe

Growth of GaAs/AlGaAs HBTs by MOMBE (CBE)

Bend insensitive fiber for FTTX applications

High performance buried heterostructure 1.55 /spl mu/m wavelength AlGaInAs/InP multiple quantum well lasers grown entirely by MOVPE technique

Characteristics of Be+ and O+ or H+ co-implantation in GaAs/AlGaAs heterojunction bipolar transistor structures

Solid ring-assisted fibers with low bend loss

The use of higher order modes in fiber amplifiers

Resonant coupling for distributed filtering in an optical fiber

Erbium emission in highly doped tellurite and alumina-silica novelty fibers

Yb-doped amplifier fiber with distributed filtering by resonant core-ring coupling

Role of the Diffusivity of Be and C in the Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors

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