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Amplification and noise properties of an erbium-doped multicore fiber amplifier

Optics express, 2011-08, Vol.19 (17), p.16715-16721

2011

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Distributed suppression of stimulated Raman scattering in an Yb-doped filter-fiber amplifier

Optics letters, 2006-09, Vol.31 (17), p.2550

2006

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800Gb/s (8x128Gb/s) unrepeatered transmission over 515-km large-area ultra-low-loss fiber using 2nd-order Raman pumping

Optics express, 2016-10, Vol.24 (22), p.25291-25297

2016

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Real-time transmission of 16 Tb/s over 1020km using 200Gb/s CFP2-DCO

Optics express, 2018-03, Vol.26 (6), p.6943-6948

2018

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Large-area low-loss fibers and advanced amplifiers for high-capacity long-haul optical networks [Invited]

Journal of optical communications and networking, 2016-07, Vol.8 (7), p.A55-A63

2016

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Polarization-maintaining higher-order mode fiber module with anomalous dispersion at 1 μm

Optics letters, 2012-10, Vol.37 (20), p.4170

2012

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Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1993-07, Vol.11 (4), p.1772-1775

1993

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Improved performance of carbon-doped GaAs base heterojunction bipolar transistors through the use of InGaP

Applied physics letters, 1992-08, Vol.61 (9), p.1092-1094

1992

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Growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy using tris-dimethylaminoarsenic

Applied physics letters, 1992-05, Vol.60 (19), p.2421-2423

1992

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Stability of carbon and beryllium-doped base GaAs/AlGaAs heterojunction bipolar transistors

Applied physics letters, 1991-12, Vol.59 (27), p.3613-3615

1991

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Thermal stability of Ti/Pt/Au nonalloyed ohmic contacts on InN

Applied physics letters, 1994-03, Vol.64 (12), p.1508-1510

1994

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InGaP/GaAs based single and double heterojunction bipolar transistors grown by mombe

Electronics letters, 1992-06, Vol.28 (12), p.1150-1152

1992

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Dry etching of thin-film InN, AlN and GaN

Semiconductor science and technology, 1993-02, Vol.8 (2), p.310-312

1993

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Broad-band tunable electroabsorption modulated laser for WDM application

IEEE journal of selected topics in quantum electronics, 1997-06, Vol.3 (3), p.960-967

1997

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Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application

IEEE electron device letters, 1993-07, Vol.14 (7), p.332-334

1993

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Small area InGaP emitter/carbon doped GaAs base HBTs grown by mombe

Electronics letters, 1992-11, Vol.28 (24), p.2250-2252

1992

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Reversible changes in doping of InGaAlN alloys induced by ion implantation or hydrogenation

Applied physics letters, 1993-08, Vol.63 (8), p.1143-1145

1993

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Alternative group V sources for growth of GaAs and AlGaAs by MOMBE (CBE)

Journal of crystal growth, 1992-11, Vol.124 (1), p.64-69

1992

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Space-, wavelength-, polarization-division multiplexed transmission of 56-Tb/s over a 76.8-km seven-core fiber

2011 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference, 2011, p.1-3

2011

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InP-based single heterojunction bipolar transistors with improved breakdown characteristics

Electronics letters, 1994-07, Vol.30 (14), p.1184-1185

1994

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Comparison of triethylgallium and tri-isobutylgallium for growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy

Applied physics letters, 1992-07, Vol.61 (2), p.180-182

1992

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Tunable electroabsorption modulated laser integrated with a bent waveguide distributed-feedback laser

IEEE photonics technology letters, 1997-05, Vol.9 (5), p.563-565

1997

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A comparison of alane precursors for growth of AlAs and AlGaAs by metalorganic molecular beam epitaxy

Solid-state electronics, 1995-03, Vol.38 (3), p.737-738

1995

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Mg doping of InP and InGaAs grown by metalorganic molecular beam epitaxy using bis-cyclopentadienyl magnesium

Applied physics letters, 1993-01, Vol.62 (3), p.258-260

1993

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Thermal stability of GaAs (C)/InAs superlattices grown by metalorganic molecular beam epitaxy

Applied physics letters, 1992-03, Vol.60 (11), p.1339-1341

1992

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Amplification and noise properties of an erbium-doped multicore fiber amplifier

Distributed suppression of stimulated Raman scattering in an Yb-doped filter-fiber amplifier

800Gb/s (8x128Gb/s) unrepeatered transmission over 515-km large-area ultra-low-loss fiber using 2nd-order Raman pumping

Real-time transmission of 16 Tb/s over 1020km using 200Gb/s CFP2-DCO

Large-area low-loss fibers and advanced amplifiers for high-capacity long-haul optical networks [Invited]

Polarization-maintaining higher-order mode fiber module with anomalous dispersion at 1 μm

Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy

Improved performance of carbon-doped GaAs base heterojunction bipolar transistors through the use of InGaP

Growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy using tris-dimethylaminoarsenic

Stability of carbon and beryllium-doped base GaAs/AlGaAs heterojunction bipolar transistors

Thermal stability of Ti/Pt/Au nonalloyed ohmic contacts on InN

InGaP/GaAs based single and double heterojunction bipolar transistors grown by mombe

Dry etching of thin-film InN, AlN and GaN

Broad-band tunable electroabsorption modulated laser for WDM application

Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application

Small area InGaP emitter/carbon doped GaAs base HBTs grown by mombe

Reversible changes in doping of InGaAlN alloys induced by ion implantation or hydrogenation

Alternative group V sources for growth of GaAs and AlGaAs by MOMBE (CBE)

Space-, wavelength-, polarization-division multiplexed transmission of 56-Tb/s over a 76.8-km seven-core fiber

InP-based single heterojunction bipolar transistors with improved breakdown characteristics

Comparison of triethylgallium and tri-isobutylgallium for growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy

Tunable electroabsorption modulated laser integrated with a bent waveguide distributed-feedback laser

A comparison of alane precursors for growth of AlAs and AlGaAs by metalorganic molecular beam epitaxy

Mg doping of InP and InGaAs grown by metalorganic molecular beam epitaxy using bis-cyclopentadienyl magnesium

Thermal stability of GaAs (C)/InAs superlattices grown by metalorganic molecular beam epitaxy

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