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Liquidity, the Mundell–Tobin Effect, and the Friedman Rule

Journal of money, credit and banking, 2024-08, Vol.56 (5), p.1235-1259

2024

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Monolithic integrated SAW filter based on AlN for high-frequency applications

Semiconductor science and technology, 2013-06, Vol.28 (6), p.65013

2013

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Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology

IEEE electron device letters, 2015-07, Vol.36 (7), p.642-644

2015

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Miniature Switchable Millimeter-Wave BiCMOS Low-Noise Amplifier at 120/140 GHz Using an HBT Switch

Micromachines (Basel), 2019-09, Vol.10 (10), p.632

2019

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D–Band RF–MEMS SPDT Switch in a 0.13~\mu m SiGe BiCMOS Technology

IEEE microwave and wireless components letters, 2016-12, Vol.26 (12), p.1002-1004

2016

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Monolithic Integration of a Wafer-Level Thin-Film Encapsulated mm-Wave RF-MEMS Switch in BEOL of a 130-nm SiGe BiCMOS Technology

IEEE transactions on components, packaging, and manufacturing technology (2011), 2022-06, Vol.12 (6), p.921-932

2022

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A 240-GHz VMPS With 1.2 ^\circ and 0.35-dB RMS Errors in 130-nm BiCMOS:C Technology

IEEE microwave and wireless technology letters (Print), 2024-02, p.1-3

2024

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A 125-143-GHz Frequency-Reconfigurable BiCMOS Compact LNA Using a Single RF-MEMS Switch

IEEE microwave and wireless components letters, 2019-05, Vol.29 (5), p.339-341

2019

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AlN/SiO2/Si3N4/Si(100)-Based CMOS Compatible Surface Acoustic Wave Filter With −12.8-dB Minimum Insertion Loss

IEEE transactions on electron devices, 2015-02, Vol.62 (3), p.764-768

2015

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The effects of cost-push inflation on Austrian banks

Financial Stability Report, 2023-11 (46), p.19

Wipf, Christian

2023

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A 240-GHz VMPS With 1.2° and 0.35-dB RMS Errors in 130-nm BiCMOS:C Technology

IEEE microwave and wireless technology letters (Print), 2024-03, Vol.34 (3), p.295-297

2024

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Graded Applications of NQS Theory for Modeling Correlated Noise in SiGe HBTs

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2384-2389

2015

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Fully integrated BiCMOS high-voltage driver circuits for on-chip RF-MEMS switch matrices

Wipf, Christian

2019

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Recent Developments on SiGe BiCMOS Technologies for mm-wave and THz Applications

2019 IEEE MTT-S International Microwave Symposium (IMS), 2019, p.1126-1129

2019

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CMOS-compatible batch processing of monolayer MoS2 MOSFETs

Journal of physics. D, Applied physics, 2018-03, Vol.51 (15)

2018

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AlN/SiO 2 /Si 3 N 4 /Si(100)-Based CMOS Compatible Surface Acoustic Wave Filter With −12.8-dB Minimum Insertion Loss

IEEE transactions on electron devices, 2015-03, Vol.62 (3), p.764-768

2015

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Substrate Integrated Waveguides for mm-wave Functionalized Silicon Interposer

2018 IEEE/MTT-S International Microwave Symposium - IMS, 2018, p.875-878

2018

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Electromagnetic and small-signal modeling of an encapsulated RF-MEMS switch for D-band applications

International journal of microwave and wireless technologies, 2017-07, Vol.9 (6), p.1271-1278

2017

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CMOS-compatible batch processing of monolayer MoS 2 MOSFETs

Journal of physics. D, Applied physics, 2018-04, Vol.51 (15), p.15

2018

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Ring filter synthesis and its BiCMOS 60 GHz implementation

International journal of microwave and wireless technologies, 2018-04, Vol.10 (3), p.291-300

2018

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D-Band Flip-Chip Packaging with Wafer-Level Cu-pillar Bumps

2023 IEEE 32nd Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS), 2023, p.1-4

2023

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High voltage level shifter for RF-MEMS control matrix with very low DC current leakage

2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2017, p.15-18

2017

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BiCMOS Through-Silicon Via (TSV) Signal Transition at 240/300 GHz for MM-Wave & Sub-THz Packaging and Heterogeneous Integration

2020 50th European Microwave Conference (EuMC), 2021, p.244-247

2021

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Highly robust X-band LNA with extremely short recovery time

2009 IEEE MTT-S International Microwave Symposium Digest, 2009, p.781-784

2009

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High-Q passives for mm-wave SiGe applications

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009, p.194-197

2009

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Liquidity, the Mundell–Tobin Effect, and the Friedman Rule

Monolithic integrated SAW filter based on AlN for high-frequency applications

Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology

Miniature Switchable Millimeter-Wave BiCMOS Low-Noise Amplifier at 120/140 GHz Using an HBT Switch

D–Band RF–MEMS SPDT Switch in a 0.13~\mu m SiGe BiCMOS Technology

Monolithic Integration of a Wafer-Level Thin-Film Encapsulated mm-Wave RF-MEMS Switch in BEOL of a 130-nm SiGe BiCMOS Technology

A 240-GHz VMPS With 1.2 ^\circ and 0.35-dB RMS Errors in 130-nm BiCMOS:C Technology

A 125-143-GHz Frequency-Reconfigurable BiCMOS Compact LNA Using a Single RF-MEMS Switch

AlN/SiO2/Si3N4/Si(100)-Based CMOS Compatible Surface Acoustic Wave Filter With −12.8-dB Minimum Insertion Loss

The effects of cost-push inflation on Austrian banks

A 240-GHz VMPS With 1.2° and 0.35-dB RMS Errors in 130-nm BiCMOS:C Technology

Graded Applications of NQS Theory for Modeling Correlated Noise in SiGe HBTs

Fully integrated BiCMOS high-voltage driver circuits for on-chip RF-MEMS switch matrices

Recent Developments on SiGe BiCMOS Technologies for mm-wave and THz Applications

CMOS-compatible batch processing of monolayer MoS2 MOSFETs

AlN/SiO 2 /Si 3 N 4 /Si(100)-Based CMOS Compatible Surface Acoustic Wave Filter With −12.8-dB Minimum Insertion Loss

Substrate Integrated Waveguides for mm-wave Functionalized Silicon Interposer

Electromagnetic and small-signal modeling of an encapsulated RF-MEMS switch for D-band applications

CMOS-compatible batch processing of monolayer MoS 2 MOSFETs

Ring filter synthesis and its BiCMOS 60 GHz implementation

D-Band Flip-Chip Packaging with Wafer-Level Cu-pillar Bumps

High voltage level shifter for RF-MEMS control matrix with very low DC current leakage

BiCMOS Through-Silicon Via (TSV) Signal Transition at 240/300 GHz for MM-Wave & Sub-THz Packaging and Heterogeneous Integration

Highly robust X-band LNA with extremely short recovery time

High-Q passives for mm-wave SiGe applications

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