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Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control

Applied physics letters, 2016-01, Vol.108 (1)

2016

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Realization of deep-submicron MOSFETS by lateral etching

Microelectronic engineering, 1991-01, Vol.13 (1-4), p.473-476

1991

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Improvement of latchup hardness by geometry and technology tuning

IEEE transactions on electron devices, 1988-10, Vol.35 (10), p.1609-1615

1988

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Use of a cmos static memory array as a technology test vehicle

Quality and reliability engineering international, 1992, Vol.8 (3), p.219-223

1992

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Pipelined architecture for fast CMOS buffer RAMs

IEEE journal of solid-state circuits, 1990-06, Vol.25 (3), p.741-747

1990

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Application of defect simulation as a tool for more efficient failure analysis

Quality and reliability engineering international, 1994, Vol.10 (4), p.297-302

1994

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Latch-Up Free VLSI CMOS Circuits Considering Power-On Transients

ESSDERC '88: 18th European Solid State Device Research Conference, 1988-09, Vol.49 (C4), p.c4-49-c4-52

1988

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Characterization of Field-Oxide-Transistor-Instabilities Caused by SOG-Planarization

ESSDERC '88: 18th European Solid State Device Research Conference, 1988-09, Vol.49 (C4), p.c4-311-c4-314

1988

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Pipeline architecture for fast CMOS buffer RAM's

IEEE journal of solid-state circuits, 1990-06, Vol.25 (3), p.741-747

1990

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Use of a CMOS static memory array as a technology test vehicle: Quality and reliability of electronic devices

Quality and reliability engineering international, 1992, Vol.8 (3), p.219-223

1992

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Impact of S/D-Preamorphization on CMOS Performance

ESSDERC '87: 17th European Solid State Device Research Conference, 1987, p.585-588

1987

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Latch-up Free CMOS Using Buried Polysilicon Diodes

ESSDERC '89: 19th European Solid State Device Research Conference, 1989, p.679-682

1989

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The Usefulness of Advanced Drain Structures as Emitters in Scaled BICMOS

ESSDERC '87: 17th European Solid State Device Research Conference, 1987, p.25-28

1987

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Critical charge model for transient latch-up in VLSI CMOS circuits

Proceedings of the 1989 International Conference on Microelectronic Test Structures, 1989, p.251-254

1989

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Narrow-band near-field nanoscopy in the spectral range from 1.3 to 8.5 THz

Applied physics letters, 2016-03, Vol.108 (11)

2016

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Static and transient latch-up hardness in N-well CMOS with on-chip substrate bias generator

1985 International Electron Devices Meeting, 1985, p.504-508

1985

Volltextzugriff (PDF)

Thermopower and resistivity of the topological insulator Bi2Te3 in the amorphous and crystalline phase

Journal of physics. Condensed matter, 2024-09, Vol.36 (35)

2024

Volltextzugriff (PDF)

A 0.5 /spl mu/m CMOS technology for multifunctional applications with embedded FN-flash memory and linear R and C modules

Proceedings of IEEE International Electron Devices Meeting, 1993, p.445-448

1993

Volltextzugriff (PDF)

Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

Nature communications, 2013-12, Vol.4 (1), p.2931-2931, Article 2931

2013

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Thermopower and resistivity of the topological insulator Bi 2 Te 3 in the amorphous and crystalline phase

Journal of physics. Condensed matter, 2024-06, Vol.36 (35)

2024

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Transient increase of the energy gap of superconducting NbN thin films excited by resonant narrow-band terahertz pulses

Physical review letters, 2013-06, Vol.110 (26), p.267003-267003, Article 267003

2013

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Gold implanted germanium photoswitch for cavity dumping of a free-electron laser

Applied physics letters, 2021-01, Vol.118 (1)

2021

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High-speed asynchronous optical sampling based on GHz Yb:KYW oscillators

Optics express, 2017-04, Vol.25 (8), p.9204-9212

2017

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Reduced n+/p+-spacing with high latchup hardness in self-aligned double well CMOS technology

1984 International Electron Devices Meeting, 1984, p.410-413

1984

Volltextzugriff (PDF)

Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowires

Applied physics letters, 2016-08, Vol.109 (9)

2016

Volltextzugriff (PDF)

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Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control

Realization of deep-submicron MOSFETS by lateral etching

Improvement of latchup hardness by geometry and technology tuning

Use of a cmos static memory array as a technology test vehicle

Pipelined architecture for fast CMOS buffer RAMs

Application of defect simulation as a tool for more efficient failure analysis

Latch-Up Free VLSI CMOS Circuits Considering Power-On Transients

Characterization of Field-Oxide-Transistor-Instabilities Caused by SOG-Planarization

Pipeline architecture for fast CMOS buffer RAM's

Use of a CMOS static memory array as a technology test vehicle: Quality and reliability of electronic devices

Impact of S/D-Preamorphization on CMOS Performance

Latch-up Free CMOS Using Buried Polysilicon Diodes

The Usefulness of Advanced Drain Structures as Emitters in Scaled BICMOS

Critical charge model for transient latch-up in VLSI CMOS circuits

Narrow-band near-field nanoscopy in the spectral range from 1.3 to 8.5 THz

Static and transient latch-up hardness in N-well CMOS with on-chip substrate bias generator

Thermopower and resistivity of the topological insulator Bi2Te3 in the amorphous and crystalline phase

A 0.5 /spl mu/m CMOS technology for multifunctional applications with embedded FN-flash memory and linear R and C modules

Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

Thermopower and resistivity of the topological insulator Bi 2 Te 3 in the amorphous and crystalline phase

Transient increase of the energy gap of superconducting NbN thin films excited by resonant narrow-band terahertz pulses

Gold implanted germanium photoswitch for cavity dumping of a free-electron laser

High-speed asynchronous optical sampling based on GHz Yb:KYW oscillators

Reduced n+/p+-spacing with high latchup hardness in self-aligned double well CMOS technology

Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowires

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