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Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers

Applied physics letters, 2001-05, Vol.78 (21), p.3166-3168

2001

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Enabling Terabit Systems through MOVPE

Journal of crystal growth, 2001-05, Vol.225 (2-4), p.391-396

2001

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High-speed InGaAsP constricted-mesa lasers

IEEE journal of quantum electronics, 1986-06, Vol.22 (6), p.833-844

1986

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Monolithic hybrid mode-locked 1.3 μm semiconductor lasers

Applied physics letters, 1990-01, Vol.56 (2), p.111-113

1990

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InP Etch Pit Morphologies Revealed by Novel HCl ‐ Based Etchants

Journal of the Electrochemical Society, 1989-06, Vol.136 (6), p.1804-1806

1989

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Preferential Etching of InGaAsP / InP Using Low Temperature Bromine/Methanol for Planar Buried Heterostructure Lasers

Journal of the Electrochemical Society, 1989-06, Vol.136 (6), p.1828-1830

1989

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Preferential Etching of InP Through Photoresist Masks

Journal of the Electrochemical Society, 1988-09, Vol.135 (9), p.2334-2338

1988

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High-frequency constricted mesa lasers

Applied physics letters, 1985-07, Vol.47 (2), p.78-80

1985

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Growth and characterization of high yield, reliable, high-power, high-speed, InP/InGaAsP capped mesa buried heterostructure distributed feedback (CMBH-DFB) lasers

IEEE journal of quantum electronics, 1989-10, Vol.25 (10), p.2091-2095

1989

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Controlled Undercutting of V‐Groove Channels for InP by Photoresist Etch Mask

Journal of the Electrochemical Society, 1988-05, Vol.135 (5), p.1231-1234

1988

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A Novel Etch Mask Process for the Etching of (011) Oriented Facet V‐Grooves in InP (100) Wafers

Journal of the Electrochemical Society, 1987-11, Vol.134 (11), p.2850-2856

1987

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Continuous operation of monolithic dynamic-single-mode coupled-cavity lasers

Applied physics letters, 1984-02, Vol.44 (4), p.368-370

1984

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Effects of Mask Imperfections on InP Etching Profiles

Journal of the Electrochemical Society, 1990-01, Vol.137 (1), p.239-242

1990

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Effect of photocarrier spreading on the photoluminescence of double heterostructure material

Journal of applied physics, 1984-01, Vol.56 (2), p.468-476

1984

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Stop-cleaved InGaAsP laser monolithically integrated with a monitoring detector

Applied physics letters, 1985-01, Vol.47 (9), p.920-922

1985

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4-Gbit/s transmission over 103 km of optical fiber using a novel electronic multiplexer/demultiplexer

Journal of lightwave technology, 1985-10, Vol.3 (5), p.1032-1035

1985

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Optical evaluation of indium gallium arsenide phosphide double-heterostructure material for injection lasers

Journal of applied physics, 1983-12, Vol.54 (12), p.7114-7118

1983

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Cleaved-coupled-cavity lasers with large cavity length ratios for enhanced stability

Applied physics letters, 1984-01, Vol.44 (9), p.821-823

1984

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Modified Photoresist Etch Mask Process for InP Channeled Substrate Lasers

Journal of the Electrochemical Society, 1989-03, Vol.136 (3), p.772-775

1989

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Measured spectral linewidth of variable-gap cleaved-coupled-cavity lasers

Electronics letters, 1985, Vol.21 (2), p.53-54

1985

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Monolithic integration of InGaAsP/InP semiconductor lasers using the stop-cleaving technique

IEEE journal of quantum electronics, 1986-07, Vol.22 (7), p.1064-1072

1986

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Etching of deep grooves for the precise positioning of cleaves in semiconductor lasers

Applied physics letters, 1985-03, Vol.46 (5), p.453-455

1985

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InGaAsP (1.3 υm) grown by liquid-phase epitaxy in the V groove of a channeled InP substrate: a photoluminescence study

Journal of applied physics, 1986-07, Vol.60 (1), p.372-375

1986

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Channeled substrate buried heterostructure InGaAsP/InP laser employing a buried Fe ion implant for current confinement

Applied physics letters, 1984-02, Vol.44 (3), p.290-292

1984

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Optimum design of 155-μm double heterostructures and ridge-waveguide lasers

Optics letters, 1984-08, Vol.9 (8), p.330

1984

Volltextzugriff (PDF)

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Generic degradation mechanism for 980 nm InxGa1−xAs/GaAs strained quantum-well lasers

Enabling Terabit Systems through MOVPE

High-speed InGaAsP constricted-mesa lasers

Monolithic hybrid mode-locked 1.3 μm semiconductor lasers

InP Etch Pit Morphologies Revealed by Novel HCl ‐ Based Etchants

Preferential Etching of InGaAsP / InP Using Low Temperature Bromine/Methanol for Planar Buried Heterostructure Lasers

Preferential Etching of InP Through Photoresist Masks

High-frequency constricted mesa lasers

Growth and characterization of high yield, reliable, high-power, high-speed, InP/InGaAsP capped mesa buried heterostructure distributed feedback (CMBH-DFB) lasers

Controlled Undercutting of V‐Groove Channels for InP by Photoresist Etch Mask

A Novel Etch Mask Process for the Etching of (011) Oriented Facet V‐Grooves in InP (100) Wafers

Continuous operation of monolithic dynamic-single-mode coupled-cavity lasers

Effects of Mask Imperfections on InP Etching Profiles

Effect of photocarrier spreading on the photoluminescence of double heterostructure material

Stop-cleaved InGaAsP laser monolithically integrated with a monitoring detector

4-Gbit/s transmission over 103 km of optical fiber using a novel electronic multiplexer/demultiplexer

Optical evaluation of indium gallium arsenide phosphide double-heterostructure material for injection lasers

Cleaved-coupled-cavity lasers with large cavity length ratios for enhanced stability

Modified Photoresist Etch Mask Process for InP Channeled Substrate Lasers

Measured spectral linewidth of variable-gap cleaved-coupled-cavity lasers

Monolithic integration of InGaAsP/InP semiconductor lasers using the stop-cleaving technique

Etching of deep grooves for the precise positioning of cleaves in semiconductor lasers

InGaAsP (1.3 υm) grown by liquid-phase epitaxy in the V groove of a channeled InP substrate: a photoluminescence study

Channeled substrate buried heterostructure InGaAsP/InP laser employing a buried Fe ion implant for current confinement

Optimum design of 155-μm double heterostructures and ridge-waveguide lasers

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