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Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs

Applied physics letters, 2005-10, Vol.87 (18)

2005

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Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

Applied physics letters, 1999-05, Vol.74 (19), p.2854-2856

1999

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Hafnium and zirconium silicates for advanced gate dielectrics

Journal of applied physics, 2000-01, Vol.87 (1), p.484-492

2000

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Stable zirconium silicate gate dielectrics deposited directly on silicon

Applied physics letters, 2000-01, Vol.76 (1), p.112-114

2000

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Correlation of annealing effects on local electronic structure and macroscopic electrical properties for HfO2 deposited by atomic layer deposition

Applied physics letters, 2003-11, Vol.83 (19), p.3984-3986

2003

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Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

Journal of applied physics, 2002-12, Vol.92 (12), p.7168-7174

2002

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GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

IEEE electron device letters, 2003-04, Vol.24 (4), p.209-211

2003

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Does Chemistry Really Matter in the Chemical Vapor Deposition of Titanium Dioxide? Precursor and Kinetic Effects on the Microstructure of Polycrystalline Films

Journal of the American Chemical Society, 1999-06, Vol.121 (22), p.5220-5229

1999

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Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition

Journal of applied physics, 2003-02, Vol.93 (3), p.1477-1481

2003

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Direct extraction of the electron tunneling effective mass in ultrathin SiO2

Applied physics letters, 1996-10, Vol.69 (18), p.2728-2730

1996

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Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

Applied physics letters, 2006-06, Vol.88 (26)

2006

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High-κ gate dielectrics: Current status and materials properties considerations

Journal of applied physics, 2001-05, Vol.89 (10), p.5243-5275

2001

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GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

Applied physics letters, 2005-02, Vol.86 (6)

2005

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Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited Al2O3∕GaN metal-oxide-semiconductor structures

Applied physics letters, 2007-04, Vol.90 (14)

2007

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Thermal decomposition behavior of the HfO2/SiO2/Si system

Journal of applied physics, 2003-07, Vol.94 (2), p.928-934

2003

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Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition

Applied physics letters, 2002-11, Vol.81 (22), p.4218-4220

2002

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Chemical vapor deposition of HfO2 films on Si(100)

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2002-03, Vol.20 (2), p.507-512

2002

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Formation and characterization of nanometer scale metal-oxide-semiconductor structures on GaAs using low-temperature atomic layer deposition

Applied physics letters, 2005-07, Vol.87 (1)

2005

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Improvement of GaAs metal–semiconductor field-effect transistor drain–source breakdown voltage by oxide surface passivation grown by atomic layer deposition

Solid-state electronics, 2005-05, Vol.49 (5), p.790-794

2005

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GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Journal of electronic materials, 2004-08, Vol.33 (8), p.912-915

2004

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Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

Applied physics letters, 2004-01, Vol.84 (3), p.434-436

2004

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GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-12, Vol.135 (3), p.282-284

2006

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Current transport and maximum dielectric strength of atomic-layer-deposited ultrathin Al2O3 on GaAs

Applied physics letters, 2007-02, Vol.90 (7)

2007

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Photoemission study of Zr- and Hf-silicates for use as high-κ oxides: Role of second nearest neighbors and interface charge

Applied physics letters, 2002-09, Vol.81 (10), p.1788-1790

2002

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Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric

Applied physics letters, 2006-09, Vol.89 (13)

2006

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Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs

Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

Hafnium and zirconium silicates for advanced gate dielectrics

Stable zirconium silicate gate dielectrics deposited directly on silicon

Correlation of annealing effects on local electronic structure and macroscopic electrical properties for HfO2 deposited by atomic layer deposition

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

Does Chemistry Really Matter in the Chemical Vapor Deposition of Titanium Dioxide? Precursor and Kinetic Effects on the Microstructure of Polycrystalline Films

Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition

Direct extraction of the electron tunneling effective mass in ultrathin SiO2

Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

High-κ gate dielectrics: Current status and materials properties considerations

GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited Al2O3∕GaN metal-oxide-semiconductor structures

Thermal decomposition behavior of the HfO2/SiO2/Si system

Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition

Chemical vapor deposition of HfO2 films on Si(100)

Formation and characterization of nanometer scale metal-oxide-semiconductor structures on GaAs using low-temperature atomic layer deposition

Improvement of GaAs metal–semiconductor field-effect transistor drain–source breakdown voltage by oxide surface passivation grown by atomic layer deposition

GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Current transport and maximum dielectric strength of atomic-layer-deposited ultrathin Al2O3 on GaAs

Photoemission study of Zr- and Hf-silicates for use as high-κ oxides: Role of second nearest neighbors and interface charge

Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric

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