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Characterization of crystal lattice defects in calcium molybdate single crystals (CaMoO4) by means of X-ray diffraction topography

X-ray spectrometry, 2015-09, Vol.44 (5), p.351-355

2015

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Synchrotron topographic evaluation of strain around craters generated by irradiation with X-ray pulses from free electron laser with different intensities

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-12, Vol.364, p.20-26

2015

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X-ray study of gadolinium gallium garnet epitaxial layers containing divalent Co ions

Thin solid films, 2011-01, Vol.519 (7), p.2111-2115

2011

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High-resolution X-ray diffractometric, topographic and reflectometric studies of epitaxial layers on porous silicon destined for exfoliation

X-ray spectrometry, 2015-09, Vol.44 (5), p.363-370

2015

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Ion implantation of the 4H SiC epitaxial layers and substrates with 2MeV Se+ and 1MeV Al+ ions

X-ray spectrometry, 2015-09, Vol.44 (5), p.371

2015

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"Ghost" segregation pattern and ferroelectric domains in mixed calcium-strontium-barium niobates

X-ray spectrometry, 2015-09, Vol.44 (5), p.356-362

2015

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Investigation of damage induced by intense femtosecond XUV pulses in silicon crystals by means of white beam synchrotron section topography

Radiation physics and chemistry (Oxford, England : 1993), 2013-12, Vol.93, p.99-103

2013

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X-ray topography of Ca0.5Sr0.5NdAlO4 single crystal

Journal of crystal growth, 2008-07, Vol.310 (14), p.3398-3402

2008

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Observation of individual dislocations in 6H and 4H SiC by means of back-reflection methods of X-ray diffraction topography

Crystal research and technology (1979), 2007-12, Vol.42 (12), p.1359-1363

2007

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X-ray topographic investigation of the deformation field around spots irradiated by FLASH single pulses

Radiation physics and chemistry (Oxford, England : 1993), 2011-10, Vol.80 (10), p.1036-1040

2011

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Revealing the defects in electron-irradiated Czochralski silicon

Radiation measurements, 2010-03, Vol.45 (3), p.624-627

2010

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X-ray synchrotron diffraction studies of III-V semiconductor compounds implanted with hydrogen

Physica status solidi. A, Applications and materials science, 2006-02, Vol.203 (2), p.227-235

2006

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Investigation of structural perfection and faceting in highly Er-doped Yb3Al5O12 crystals

Crystal research and technology (1979), 2008-04, Vol.43 (4), p.369-373

2008

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Effect of annealing under stress on defect structure of Si–Ge

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.137-140

2008

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Influence of deep-implanted Kr ions on resistivity of pressure manganin sensors

Vacuum, 2005-05, Vol.78 (2), p.515-518

2005

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Synchrotron white beam topography studies of SrLaGaO4 crystals

Journal of alloys and compounds, 2005-09, Vol.401 (1-2), p.75-79

2005

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Investigation of the defects distribution along the growth direction in GdCOB crystals by synchrotron and conventional X-ray topography

Journal of alloys and compounds, 2005-09, Vol.401 (1), p.69-74

2005

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IR Spectroscopy and X-Ray Topography Study of Annealing of Proton Bombarded Silicon

August 16, 2021, Vol.66, Number 2, p.833-836

2021

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Numerical simulation of Bragg-case section topographic images of dislocations in silicon

Journal of physics. D, Applied physics, 2000-05, Vol.33 (10), p.1230-1238

2000

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Structural characterization of InxGa1-xAs/Inp layers under different stresses

Applied surface science, 2006-10, Vol.253 (1), p.261-265

2006

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Bragg-case section topography of growth defects in Si : Ge crystals

Journal of physics. D, Applied physics, 2003-05, Vol.36 (10A), p.A133-A138

2003

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X-ray topographic investigation of large oxygen precipitates in silicon

Journal of alloys and compounds, 2004-01, Vol.362 (1), p.301-306

2004

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Conventional and synchrotron radiation back reflection topography of GdCa4O(BO3)3 crystals

Journal of alloys and compounds, 2004-11, Vol.382 (1-2), p.153-159

2004

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Synchrotron X-ray diffraction studies of silicon implanted with high-energy Ar ions after thermal annealing

Journal of alloys and compounds, 2004-11, Vol.382 (1-2), p.146-152, Article 146

2004

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Defect structure of InAlAs/InP layers

Journal of alloys and compounds, 2005-09, Vol.401 (1), p.221-225

2005

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Characterization of crystal lattice defects in calcium molybdate single crystals (CaMoO4) by means of X-ray diffraction topography

Synchrotron topographic evaluation of strain around craters generated by irradiation with X-ray pulses from free electron laser with different intensities

X-ray study of gadolinium gallium garnet epitaxial layers containing divalent Co ions

High-resolution X-ray diffractometric, topographic and reflectometric studies of epitaxial layers on porous silicon destined for exfoliation

Ion implantation of the 4H SiC epitaxial layers and substrates with 2MeV Se+ and 1MeV Al+ ions

"Ghost" segregation pattern and ferroelectric domains in mixed calcium-strontium-barium niobates

Investigation of damage induced by intense femtosecond XUV pulses in silicon crystals by means of white beam synchrotron section topography

X-ray topography of Ca0.5Sr0.5NdAlO4 single crystal

Observation of individual dislocations in 6H and 4H SiC by means of back-reflection methods of X-ray diffraction topography

X-ray topographic investigation of the deformation field around spots irradiated by FLASH single pulses

Revealing the defects in electron-irradiated Czochralski silicon

X-ray synchrotron diffraction studies of III-V semiconductor compounds implanted with hydrogen

Investigation of structural perfection and faceting in highly Er-doped Yb3Al5O12 crystals

Effect of annealing under stress on defect structure of Si–Ge

Influence of deep-implanted Kr ions on resistivity of pressure manganin sensors

Synchrotron white beam topography studies of SrLaGaO4 crystals

Investigation of the defects distribution along the growth direction in GdCOB crystals by synchrotron and conventional X-ray topography

IR Spectroscopy and X-Ray Topography Study of Annealing of Proton Bombarded Silicon

Numerical simulation of Bragg-case section topographic images of dislocations in silicon

Structural characterization of InxGa1-xAs/Inp layers under different stresses

Bragg-case section topography of growth defects in Si : Ge crystals

X-ray topographic investigation of large oxygen precipitates in silicon

Conventional and synchrotron radiation back reflection topography of GdCa4O(BO3)3 crystals

Synchrotron X-ray diffraction studies of silicon implanted with high-energy Ar ions after thermal annealing

Defect structure of InAlAs/InP layers

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