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III‐Nitride Micro‐LEDs for Efficient Emissive Displays

Laser & photonics reviews, 2019-09, Vol.13 (9), p.n/a

2019

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Comparison between blue lasers and light-emitting diodes for future solid-state lighting

Laser & photonics reviews, 2013-11, Vol.7 (6), p.963-993

2013

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Advantages of III-nitride laser diodes in solid-state lighting

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.980-985

2015

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Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots

Materials, 2023-02, Vol.16 (5), p.1890

2023

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Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Journal of applied physics, 2015-04, Vol.117 (13)

2015

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Four-color laser white illuminant demonstrating high color-rendering quality

Optics express, 2011-07, Vol.19 Suppl 4 (S4), p.A982-A990

2011

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III-nitride quantum dots for ultra-efficient solid-state lighting

Laser & photonics reviews, 2016-07, Vol.10 (4), p.612-622

2016

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III-nitride core-shell nanowire arrayed solar cells

Nanotechnology, 2012-05, Vol.23 (19), p.194007-1-6

2012

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Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells

Applied physics letters, 2012-03, Vol.100 (11), p.111119-111119-5

2012

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Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes

Applied physics letters, 2014-08, Vol.105 (6)

2014

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High voltage and high current density vertical GaN power diodes

Electronics letters, 2016-06, Vol.52 (13), p.1170-1171

2016

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Toward Smart and Ultra‐efficient Solid‐State Lighting

Advanced optical materials, 2014-09, Vol.2 (9), p.809-836

2014

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The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices

Applied physics letters, 2010-02, Vol.96 (5)

2010

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Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core–Shell Nanowire Light-Emitting Diode Array

Nano letters, 2013-09, Vol.13 (9), p.4317-4325

2013

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InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

Applied physics letters, 2004-05, Vol.84 (19), p.3885-3887

2004

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Effect of thickness and carrier density on the optical polarization of Al0.44Ga0.56N/Al0.55Ga0.45N quantum well layers

Journal of applied physics, 2014-05, Vol.115 (17)

2014

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Vertical GaN Power Diodes With a Bilayer Edge Termination

IEEE transactions on electron devices, 2016-01, Vol.63 (1), p.419-425

2016

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Structural and optical characterization of thin AlInN films on c-plane GaN substrates

Journal of applied physics, 2023-08, Vol.134 (7)

2023

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The potential of III-nitride laser diodes for solid-state lighting

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.674-677

2014

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Polarization anisotropy in the electroluminescence of m -plane InGaN - GaN multiple-quantum-well light-emitting diodes

Applied physics letters, 2005-03, Vol.86 (11), p.111101-111101-3

2005

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Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal–Oxide–Semiconductor Devices

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3442-3446

2023

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Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

Journal of applied physics, 2014-08, Vol.116 (5)

2014

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Controlling indium incorporation in InGaN barriers with dilute hydrogen flows

Journal of crystal growth, 2014-03, Vol.390, p.38-45

2014

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Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

AIP advances, 2017-10, Vol.7 (10), p.105312-105312-7

2017

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Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2912-2918

2015

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III‐Nitride Micro‐LEDs for Efficient Emissive Displays

Comparison between blue lasers and light-emitting diodes for future solid-state lighting

Advantages of III-nitride laser diodes in solid-state lighting

Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots

Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Four-color laser white illuminant demonstrating high color-rendering quality

III-nitride quantum dots for ultra-efficient solid-state lighting

III-nitride core-shell nanowire arrayed solar cells

Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells

Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes

High voltage and high current density vertical GaN power diodes

Toward Smart and Ultra‐efficient Solid‐State Lighting

The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices

Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core–Shell Nanowire Light-Emitting Diode Array

InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

Effect of thickness and carrier density on the optical polarization of Al0.44Ga0.56N/Al0.55Ga0.45N quantum well layers

Vertical GaN Power Diodes With a Bilayer Edge Termination

Structural and optical characterization of thin AlInN films on c-plane GaN substrates

The potential of III-nitride laser diodes for solid-state lighting

Polarization anisotropy in the electroluminescence of m -plane InGaN - GaN multiple-quantum-well light-emitting diodes

Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal–Oxide–Semiconductor Devices

Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

Controlling indium incorporation in InGaN barriers with dilute hydrogen flows

Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes

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