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Electron–phonon interaction studies in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well structure

Physica. E, Low-dimensional systems & nanostructures, 2003-07, Vol.19 (1-2), p.215-220

2003

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Unstrained, modulation-doped, In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As field-effect transistor grown on GaAs substrate

IEEE electron device letters, 1992-12, Vol.13 (12), p.621-623

1992

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An anisotype GaAs/In/sub x/Ga/sub 1-x/As heterojunction field-effect transistor for digital logic applications

IEEE electron device letters, 1990-01, Vol.11 (1), p.30-32

1990

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In0.30Al0.70As/In0.30Ga0.70As quasi-insulating gate strained-layer field effect transistors grown by molecular beam epitaxy

Thin solid films, 1988-12, Vol.166, p.155-162

1988

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Electron–phonon interaction studies in an In 0.52Al 0.48As/In 0.53Ga 0.47As/In 0.52Al 0.48As quantum well structure

Physica. E, Low-dimensional systems & nanostructures, 2003, Vol.19 (1), p.215-220

2003

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DX centers in InxAl1−xAs

Journal of applied physics, 1999-03, Vol.85 (6), p.3380-3382

1999

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InxAl1-xAs/InP heterojunction insulated gate field effect transistors (HIGFET's)

IEEE electron device letters, 1987-02, Vol.8 (2), p.53-54

1987

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Accumulation and depletion in InAs epilayers

Electronics letters, 2000-03, Vol.36 (7), p.672-673

2000

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Space-charge-limited currents and trapping in semi-insulating InP

IEEE electron device letters, 1985-07, Vol.6 (7), p.356-358, Article 356

1985

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Conductance fluctuations in a ballistic in-plane gated InGaAs quantum dot

Superlattices and microstructures, 1996-01, Vol.20 (3), p.307-315

1996

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Electroabsorption modulation at 1.3 μm on GaAs substrates using a step-graded low temperature grown InAlAs buffer

IEEE photonics technology letters, 1996-03, Vol.8 (3), p.352-354

1996

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Structure and galvanomagnetic properties of two-phase recrystallised InSb-In layers

Solid-state electronics, 1965-05, Vol.8 (5), p.467-468

1965

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Electroabsorption waveguide modulators at 1.3 μm fabricated on GaAs substrates

IEEE photonics technology letters, 1997-09, Vol.9 (9), p.1229-1231

1997

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Correlation of buffer strain relaxation modes with transport properties of two-dimensional electron gases

Journal of applied physics, 1996-12, Vol.80 (12), p.6849-6854

1996

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Electroabsorption in lattice-matched InGaAlAs-InAlAs quantum wells at 1.3 μm

IEEE photonics technology letters, 1995-10, Vol.7 (10), p.1159-1161

1995

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Surface fermi level of III–V compound semiconductor-dielectric interfaces

Surface science, 1983-01, Vol.132 (1), p.390-405

Wieder, H.H.

1983

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External habit modification and ferroelectric properties of tgs

The Journal of physics and chemistry of solids, 1964-01, Vol.25 (2), p.241-245

1964

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Preface

Thin solid films, 1983-01, Vol.103 (1-3), p.1-2

1983

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Quantum-confined Stark effect modulators at 1.06 mu m on GaAs

IEEE photonics technology letters, 1993-12, Vol.5 (12), p.1383-1385

1993

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Anisotropic Electron Mobility of Two-Dimensional-Electron-Gas in Modulation Doped In x .Ga 1−y As/In y Al 1−y As Heterostructures

MRS proceedings, 1992, Vol.263, Article 377

1992

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Anisotropic Electron Mobility of Two-Dimensional-Electron-Gas in Modulation Doped Inx.Ga1−y As/InyAl1−yAs Heterostructures

MRS proceedings, 1992, Vol.263

1992

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Optical studies on the band structure of Ga 0.08In 0.92As 0.18P 0.82

Solid state communications, 1979, Vol.29 (4), p.403-406

1979

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In 0.30Al 0.70As/In 0.30Ga 0.70As quasi-insulating gate strained-layer field effect transistors grown by molecular beam epitaxy

Thin solid films, 1988, Vol.166, p.155-162

1988

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Molecular beam epitaxial growth and properties of highly strained In xGa 1−xAs/GaAs multiple quantum wells

Journal of crystal growth, 1991, Vol.111 (1), p.419-423

1991

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Properties and device applications of evaporated InSb films

Proceedings of the IEEE, 1963-03, Vol.51 (3), p.513-514

Wieder, H.H.

1963

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Electron–phonon interaction studies in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well structure

Unstrained, modulation-doped, In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As field-effect transistor grown on GaAs substrate

An anisotype GaAs/In/sub x/Ga/sub 1-x/As heterojunction field-effect transistor for digital logic applications

In0.30Al0.70As/In0.30Ga0.70As quasi-insulating gate strained-layer field effect transistors grown by molecular beam epitaxy

Electron–phonon interaction studies in an In 0.52Al 0.48As/In 0.53Ga 0.47As/In 0.52Al 0.48As quantum well structure

DX centers in InxAl1−xAs

InxAl1-xAs/InP heterojunction insulated gate field effect transistors (HIGFET's)

Accumulation and depletion in InAs epilayers

Space-charge-limited currents and trapping in semi-insulating InP

Conductance fluctuations in a ballistic in-plane gated InGaAs quantum dot

Electroabsorption modulation at 1.3 μm on GaAs substrates using a step-graded low temperature grown InAlAs buffer

Structure and galvanomagnetic properties of two-phase recrystallised InSb-In layers

Electroabsorption waveguide modulators at 1.3 μm fabricated on GaAs substrates

Correlation of buffer strain relaxation modes with transport properties of two-dimensional electron gases

Electroabsorption in lattice-matched InGaAlAs-InAlAs quantum wells at 1.3 μm

Surface fermi level of III–V compound semiconductor-dielectric interfaces

External habit modification and ferroelectric properties of tgs

Preface

Quantum-confined Stark effect modulators at 1.06 mu m on GaAs

Anisotropic Electron Mobility of Two-Dimensional-Electron-Gas in Modulation Doped In x .Ga 1−y As/In y Al 1−y As Heterostructures

Anisotropic Electron Mobility of Two-Dimensional-Electron-Gas in Modulation Doped Inx.Ga1−y As/InyAl1−yAs Heterostructures

Optical studies on the band structure of Ga 0.08In 0.92As 0.18P 0.82

In 0.30Al 0.70As/In 0.30Ga 0.70As quasi-insulating gate strained-layer field effect transistors grown by molecular beam epitaxy

Molecular beam epitaxial growth and properties of highly strained In xGa 1−xAs/GaAs multiple quantum wells

Properties and device applications of evaporated InSb films

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