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Electronic and thermoelectric properties of few-layer transition metal dichalcogenides

The Journal of chemical physics, 2014-03, Vol.140 (12), p.124710-124710

2014

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Ising superconductivity: A first-principles perspective

Applied physics letters, 2023-06, Vol.122 (24)

2023

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Effect of alloying in monolayer niobium dichalcogenide superconductors

Nature communications, 2022-05, Vol.13 (1), p.2376-2376, Article 2376

2022

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Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands

Journal of applied physics, 2015-08, Vol.118 (7)

2015

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A first-principles understanding of point defects and impurities in GaN

Journal of applied physics, 2021-03, Vol.129 (11)

2021

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Donor doping of corundum (AlxGa1−x)2O3

Applied physics letters, 2022-07, Vol.121 (4)

2022

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Erratum: “Donor doping of corundum (AlxGa1−x)2O3” [Appl. Phys. Lett. 121, 042110 (2022)]

Applied physics letters, 2022-11, Vol.121 (20)

2022

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Tin DisulfideAn Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics

ACS nano, 2014-10, Vol.8 (10), p.10743-10755

2014

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Iron as a source of efficient Shockley-Read-Hall recombination in GaN

Applied physics letters, 2016-10, Vol.109 (16)

2016

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Fundamentals of lateral and vertical heterojunctions of atomically thin materials

Nanoscale, 2016-02, Vol.8 (7), p.387-3887

2016

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Defect identification based on first-principles calculations for deep level transient spectroscopy

Applied physics letters, 2018-11, Vol.113 (19)

2018

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Prospects for n-type conductivity in cubic boron nitride

Applied physics letters, 2021-10, Vol.119 (16)

2021

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Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer

Advanced functional materials, 2014-11, Vol.24 (42), p.6629-6638

2014

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Direct Bandgap Transition in Many-Layer MoS2 by Plasma-Induced Layer Decoupling

Advanced materials (Weinheim), 2015-03, Vol.27 (9), p.1573-1578

2015

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Erratum: “Defect identification based on first-principles calculations for deep level transient spectroscopy” [Appl. Phys. Lett. 113, 192106 (2018)]

Applied physics letters, 2023-08, Vol.123 (7)

2023

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Strategies for p-type doping of ZnGeN2

Applied physics letters, 2019-01, Vol.114 (3)

2019

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Hybrid functional study of native point defects and impurities in ZnGeN2

Journal of applied physics, 2017-11, Vol.122 (19)

2017

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Optical transitions of neutral Mg in Mg-doped β-Ga2O3

APL materials, 2022-02, Vol.10 (2), p.021103-021103-7

2022

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First-principles study of bandgap bowing in BGaN alloys

Journal of applied physics, 2019-09, Vol.126 (9)

2019

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First-principles calculations of defects and electron–phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes

Journal of applied physics, 2024-04, Vol.135 (15)

2024

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Prospects for n-type doping of (AlxGa1−x)2O3 alloys

Applied physics letters, 2020-04, Vol.116 (17)

2020

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Phase Engineering of 2D Tin Sulfides

Small (Weinheim an der Bergstrasse, Germany), 2016-06, Vol.12 (22), p.2998-3004

2016

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Coulomb impurity scattering in topological insulator thin films

Applied physics letters, 2014-07, Vol.105 (3)

2014

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Finite-size correction for slab supercell calculations of materials with spontaneous polarization

npj computational materials, 2021-04, Vol.7 (1), p.1-9, Article 58

2021

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Band bowing and the direct-to-indirect crossover in random BAlN alloys

Physical review materials, 2017-11, Vol.1 (6), Article 065001

2017

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Electronic and thermoelectric properties of few-layer transition metal dichalcogenides

Ising superconductivity: A first-principles perspective

Effect of alloying in monolayer niobium dichalcogenide superconductors

Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands

A first-principles understanding of point defects and impurities in GaN

Donor doping of corundum (AlxGa1−x)2O3

Erratum: “Donor doping of corundum (AlxGa1−x)2O3” [Appl. Phys. Lett. 121, 042110 (2022)]

Tin DisulfideAn Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics

Iron as a source of efficient Shockley-Read-Hall recombination in GaN

Fundamentals of lateral and vertical heterojunctions of atomically thin materials

Defect identification based on first-principles calculations for deep level transient spectroscopy

Prospects for n-type conductivity in cubic boron nitride

Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer

Direct Bandgap Transition in Many-Layer MoS2 by Plasma-Induced Layer Decoupling

Erratum: “Defect identification based on first-principles calculations for deep level transient spectroscopy” [Appl. Phys. Lett. 113, 192106 (2018)]

Strategies for p-type doping of ZnGeN2

Hybrid functional study of native point defects and impurities in ZnGeN2

Optical transitions of neutral Mg in Mg-doped β-Ga2O3

First-principles study of bandgap bowing in BGaN alloys

First-principles calculations of defects and electron–phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes

Prospects for n-type doping of (AlxGa1−x)2O3 alloys

Phase Engineering of 2D Tin Sulfides

Coulomb impurity scattering in topological insulator thin films

Finite-size correction for slab supercell calculations of materials with spontaneous polarization

Band bowing and the direct-to-indirect crossover in random BAlN alloys

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