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O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM2O3 and TMO2 oxides

Microelectronic engineering, 2011-07, Vol.88 (7), p.1471-1474

2011

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Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics

Microelectronic engineering, 2005-06, Vol.80, p.110-113

2005

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Polar science results from Mars Reconnaissance Orbiter: Multiwavelength, multiyear insights

Icarus (New York, N.Y. 1962), 2024-09, Vol.419, p.115794, Article 115794

2024

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Chemical bonding and graded interfacial transition regions at transition metal, Hf(Zr), /high- k gate dielectric, Hf(Zr)O 2, interfaces

Thin solid films, 2008, Vol.517 (1), p.343-345

2008

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Metal gate electrodes: Theoretical studies of Zr/ZrO 2 and Hf/HfO 2 interfaces

Surface science, 2007, Vol.601 (18), p.4138-4143

2007

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O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM 2O 3 and TMO 2 oxides

Microelectronic engineering, 2011, Vol.88 (7), p.1471-1474

2011

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Theory of chemisorption and reactions on metal surfaces

Surface science reports, 1996, Vol.24 (3), p.55,59-57,124

1996

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Metal gate electrodes for devices with high-k gate dielectrics: Zr/ZrO 2 and Hf/HfO 2 intrinsic interfacial transition regions

Microelectronic engineering, 2007, Vol.84 (9), p.2259-2262

2007

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Remote plasma-deposited GeO2 with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO2

Microelectronic engineering, 2011-07, Vol.88 (7), p.1537-1540

2011

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Remote plasma-deposited GeO 2 with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO 2

Microelectronic engineering, 2011, Vol.88 (7), p.1537-1540

2011

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Chemisorption of hydrogen on the nickel(111) surface

The Journal of chemical physics, 1988-10, Vol.89 (8), p.5329-5334

1988

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Metal gate electrodes : Theoretical studies of Zr/ZrO2 and Hf/HfO2 interfaces

Surface science, 2007-09, Vol.601 (18), p.4138-4143

2007

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Chemical bonding and graded interfacial transition regions at transition metal, Hf(Zr), /high-k gate dielectric, Hf(Zr)O2, interfaces

Thin solid films, 2008-11, Vol.517 (1), p.343-345

2008

Volltextzugriff (PDF)

Metal gate electrodes for devices with high-k gate dielectrics : Zr/ZrO2 and Hf/HfO2 intrinsic interfacial transition regions

Microelectronic engineering, 2007-09, Vol.84 (9-10), p.2259-2262

2007

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Theoretical studies of the chemisorption of hydrogen on copper

The Journal of chemical physics, 1982-09, Vol.77 (5), p.2673-2683

1982

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Non-Crystalline SiO2: Processing Induced Pre-Existing Defects Associated with Vacated O-Atom Intrinsic Bonding Sites

Physics procedia, 2013, Vol.44, p.99-107

2013

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A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys

Solid-state electronics, 2002-11, Vol.46 (11), p.1687-1697

2002

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Theoretical studies of surface reactions on metals

Catalysis today, 1999-05, Vol.50 (3-4), p.603-612

1999

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Suppression of Ge–O and Ge–N bonding at Ge–HfO 2 and Ge–TiO 2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices

Microelectronics and reliability, 2008, Vol.48 (3), p.364-369

2008

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Photoinduced dissociation of methylnitrite on Ag( [formula omitted])

Surface science, 2002-09, Vol.516 (3), p.254-264

2002

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Adsorption of ammonia on Ni(111)

Journal of physical chemistry (1952), 1990-08, Vol.94:16

1990

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Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates : Integration issues Ge gate stacks into advanced devices

Microelectronics and reliability, 2008-03, Vol.48 (3), p.364-369

2008

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Ab initio theory calculations of the electronic structure of nc-As 2S 3 and GeS 2: an intrinsic mechanism for reversible photo-darkening

Journal of non-crystalline solids, 2004, Vol.338, p.543-547

2004

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Local atomic structure and infrared effective charges in tetrahedrally-bonded glasses from ab initio theory electronic structure calculations

Journal of non-crystalline solids, 2004-06, Vol.338, p.155-158

2004

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Ab initio theory calculations of the electronic structure of nc-As2S3 and GeS2: an intrinsic mechanism for reversible photo-darkening

Journal of non-crystalline solids, 2004-06, Vol.338-340, p.543-547

2004

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O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM2O3 and TMO2 oxides

Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics

Polar science results from Mars Reconnaissance Orbiter: Multiwavelength, multiyear insights

Chemical bonding and graded interfacial transition regions at transition metal, Hf(Zr), /high- k gate dielectric, Hf(Zr)O 2, interfaces

Metal gate electrodes: Theoretical studies of Zr/ZrO 2 and Hf/HfO 2 interfaces

O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM 2O 3 and TMO 2 oxides

Theory of chemisorption and reactions on metal surfaces

Metal gate electrodes for devices with high-k gate dielectrics: Zr/ZrO 2 and Hf/HfO 2 intrinsic interfacial transition regions

Remote plasma-deposited GeO2 with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO2

Remote plasma-deposited GeO 2 with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO 2

Chemisorption of hydrogen on the nickel(111) surface

Metal gate electrodes : Theoretical studies of Zr/ZrO2 and Hf/HfO2 interfaces

Chemical bonding and graded interfacial transition regions at transition metal, Hf(Zr), /high-k gate dielectric, Hf(Zr)O2, interfaces

Metal gate electrodes for devices with high-k gate dielectrics : Zr/ZrO2 and Hf/HfO2 intrinsic interfacial transition regions

Theoretical studies of the chemisorption of hydrogen on copper

Non-Crystalline SiO2: Processing Induced Pre-Existing Defects Associated with Vacated O-Atom Intrinsic Bonding Sites

A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys

Theoretical studies of surface reactions on metals

Suppression of Ge–O and Ge–N bonding at Ge–HfO 2 and Ge–TiO 2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices

Photoinduced dissociation of methylnitrite on Ag( [formula omitted])

Adsorption of ammonia on Ni(111)

Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates : Integration issues Ge gate stacks into advanced devices

Ab initio theory calculations of the electronic structure of nc-As 2S 3 and GeS 2: an intrinsic mechanism for reversible photo-darkening

Local atomic structure and infrared effective charges in tetrahedrally-bonded glasses from ab initio theory electronic structure calculations

Ab initio theory calculations of the electronic structure of nc-As2S3 and GeS2: an intrinsic mechanism for reversible photo-darkening

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