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Comparison of electron–phonon and hole–phonon energy loss rates in silicon

Solid-state electronics, 2015-01, Vol.103, p.40-43

2015

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Superconducting platinum silicide for electron cooling in silicon

Solid-state electronics, 2015-01, Vol.103, p.15-18

2015

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Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Solid-state electronics, 2014-08, Vol.98, p.93-98

2014

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Improved effective mobility extraction in MOSFETs

Solid-state electronics, 2009-12, Vol.53 (12), p.1252-1256

2009

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Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

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Accurate effective mobility extraction in SOI MOS transistors

2009 10th International Conference on Ultimate Integration of Silicon, 2009, p.31-34

2009

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High-Frequency Performance of Schottky Source/Drain Silicon pMOS Devices

IEEE electron device letters, 2008-04, Vol.29 (4), p.396-398

2008

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The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal

2008 9th International Conference on Ultimate Integration of Silicon, 2008, p.19-22

2008

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Anomalous Ge diffusion effects during Ge-condensation

2008 9th International Conference on Ultimate Integration of Silicon, 2008, p.207-210

2008

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Channel backscattering characteristics of high performance germanium pMOSFETs

2008 9th International Conference on Ultimate Integration of Silicon, 2008, p.7-10

2008

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Static and High-Frequency Behavior and Performance of Schottky-Barrier p-MOSFET Devices

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2796-2802

2007

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Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

Solid-state electronics, 2007-05, Vol.51 (5), p.771-777

2007

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Evidence of reduced self-heating in strained Si MOSFETs

IEEE electron device letters, 2005-09, Vol.26 (9), p.684-686

2005

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Impact ionisation in strained SiGe pMOSFETs

Electronics letters, 2005-08, Vol.41 (16), p.925-927

2005

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Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Journal of applied physics, 2004-12, Vol.96 (11), p.6470-6476

2004

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Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

Applied surface science, 2004-03, Vol.224 (1-4), p.265-269

2004

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Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si 0.3Ge 0.7 channel grown by MBE

Applied surface science, 2004, Vol.224 (1), p.265-269

2004

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Spin precession observation in quantum corrections to resistance of Si0.7Ge0.3/Si0.2Ge0.8 heterostructure with 2DHG

Physica. E, Low-dimensional systems & nanostructures, 2003-05, Vol.18 (1-3), p.145-146

2003

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Spin precession observation in quantum corrections to resistance of Si 0.7Ge 0.3/Si 0.2Ge 0.8 heterostructure with 2DHG

Physica. E, Low-dimensional systems & nanostructures, 2003, Vol.18 (1), p.145-146

2003

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P-Si/sub 0.3/Ge/sub 0.7/and p-Si/sub 0.2/Ge/sub 0.8/ MOSFETs of enhanced performance

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003, 2003, p.557-560

2003

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SiGe(C) epitaxial technologies—issues and prospectives

Thin solid films, 2002-06, Vol.412 (1), p.44-49

2002

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Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1-3), p.444-448

2002

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Maximum entropy mobility spectrum analysis for magnetotransport characterization of semiconductor multilayer structures

Proceedings. International Semiconductor Conference, 2002, Vol.2, p.415-418 vol.2

2002

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Transconductance, carrier mobility and 1/ f noise in Si/Si 0.64Ge 0.36/Si pMOSFETs

Materials science & engineering. B, Solid-state materials for advanced technology, 2002, Vol.89 (1), p.444-448

2002

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Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

Physica. B, Condensed matter, 2001-04, Vol.298 (1-4), p.496-500

2001

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Comparison of electron–phonon and hole–phonon energy loss rates in silicon

Superconducting platinum silicide for electron cooling in silicon

Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Improved effective mobility extraction in MOSFETs

Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs

Accurate effective mobility extraction in SOI MOS transistors

High-Frequency Performance of Schottky Source/Drain Silicon pMOS Devices

The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal

Anomalous Ge diffusion effects during Ge-condensation

Channel backscattering characteristics of high performance germanium pMOSFETs

Static and High-Frequency Behavior and Performance of Schottky-Barrier p-MOSFET Devices

Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

Evidence of reduced self-heating in strained Si MOSFETs

Impact ionisation in strained SiGe pMOSFETs

Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si 0.3Ge 0.7 channel grown by MBE

Spin precession observation in quantum corrections to resistance of Si0.7Ge0.3/Si0.2Ge0.8 heterostructure with 2DHG

Spin precession observation in quantum corrections to resistance of Si 0.7Ge 0.3/Si 0.2Ge 0.8 heterostructure with 2DHG

P-Si/sub 0.3/Ge/sub 0.7/and p-Si/sub 0.2/Ge/sub 0.8/ MOSFETs of enhanced performance

SiGe(C) epitaxial technologies—issues and prospectives

Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Maximum entropy mobility spectrum analysis for magnetotransport characterization of semiconductor multilayer structures

Transconductance, carrier mobility and 1/ f noise in Si/Si 0.64Ge 0.36/Si pMOSFETs

Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

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