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Accurate effective mobility extraction in SOI MOS transistors

2009 10th International Conference on Ultimate Integration of Silicon, 2009, p.31-34

2009

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Anomalous Ge diffusion effects during Ge-condensation

2008 9th International Conference on Ultimate Integration of Silicon, 2008, p.207-210

2008

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Channel backscattering characteristics of high performance germanium pMOSFETs

2008 9th International Conference on Ultimate Integration of Silicon, 2008, p.7-10

2008

Volltextzugriff (PDF)

Comparison of electron–phonon and hole–phonon energy loss rates in silicon

Solid-state electronics, 2015-01, Vol.103, p.40-43

2015

Volltextzugriff (PDF)

A comparison of the behaviour of Si 0.5Ge 0.5 alloy during dry and wet oxidation

Thin solid films, 1992, Vol.222 (1), p.141-144

1992

Volltextzugriff (PDF)

A comparison of the behaviour of Si0.5Ge0.5 alloy during dry and wet oxidation

Thin solid films, 1992-12, Vol.222 (1-2), p.141-144

1992

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The determination of strain in Si-Ge superlattices by electron diffraction in a scanning transmission electron microscope

Journal of crystal growth, 1991-05, Vol.111 (1), p.925-930

1991

Volltextzugriff (PDF)

The electrical assessment of p-isotype Si/SiGe/Si heterostructures grown by MBE

Thin solid films, 1992-12, Vol.222 (1), p.116-119

1992

Volltextzugriff (PDF)

Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon

Journal of crystal growth, 1995-12, Vol.157 (1), p.109-112

1995

Volltextzugriff (PDF)

Electron beam induced damage of silicon germanium

Microelectronic engineering, 1997-02, Vol.35 (1-4), p.59-62

1997

Volltextzugriff (PDF)

An electronic phase transition in NiFe2O4?

Journal of magnetism and magnetic materials, 1980-01, Vol.15-18, p.899-900

1980

Volltextzugriff (PDF)

Elemental boron and antimony doping of MBE Si and SiGe structures grown at temperatures below 600°C

Journal of crystal growth, 1991-05, Vol.111 (1), p.907-911

1991

Volltextzugriff (PDF)

Enhanced Velocity Overshoot and Transconductance in Si/Si(0.64)Ge(0.36)/Si pMOSFETs - Predictions for Deep Submicron Devices

31st European Solid-State Device Research Conference, 2001, p.199-202

2001

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Evidence of reduced self-heating in strained Si MOSFETs

IEEE electron device letters, 2005-09, Vol.26 (9), p.684-686

2005

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Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

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Fabrication and characterization of one dimensional hole gas

Superlattices and microstructures, 1992, Vol.12 (4), p.535-537

1992

Volltextzugriff (PDF)

Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Solid-state electronics, 2014-08, Vol.98, p.93-98

2014

Volltextzugriff (PDF)

Fully pseudomorphic Si/SiGe/Si heterostructures for p-channel field effect devices

Thin solid films, 1997-02, Vol.294 (1), p.160-165

Whall, T.E.

1997

Volltextzugriff (PDF)

Growth and characterisation of pseudomorphic Si/SiGe/Si heterostructures for P-channel field-effect transistors

Thin solid films, 1997-09, Vol.306 (2), p.338-345

1997

Volltextzugriff (PDF)

High-Frequency Performance of Schottky Source/Drain Silicon pMOS Devices

IEEE electron device letters, 2008-04, Vol.29 (4), p.396-398

2008

Volltextzugriff (PDF)

High-spin low-spin transition in nickel ferrous ferrite under pressure

Journal of magnetism and magnetic materials, 1987-08, Vol.68 (2), p.228-232

1987

Volltextzugriff (PDF)

Hole transport in Si 0.8Ge 0.2 quantum wells at low temperatures

Thin solid films, 1992, Vol.222 (1), p.24-26

1992

Volltextzugriff (PDF)

Hole transport in Si0.8Ge0.2 quantum wells at low temperatures

Thin solid films, 1992-12, Vol.222 (1-2), p.24-26

1992

Volltextzugriff (PDF)

Impact ionisation in strained SiGe pMOSFETs

Electronics letters, 2005-08, Vol.41 (16), p.925-927

2005

Volltextzugriff (PDF)

Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

Solid-state electronics, 2007-05, Vol.51 (5), p.771-777

2007

Volltextzugriff (PDF)

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Accurate effective mobility extraction in SOI MOS transistors

Anomalous Ge diffusion effects during Ge-condensation

Channel backscattering characteristics of high performance germanium pMOSFETs

Comparison of electron–phonon and hole–phonon energy loss rates in silicon

A comparison of the behaviour of Si 0.5Ge 0.5 alloy during dry and wet oxidation

A comparison of the behaviour of Si0.5Ge0.5 alloy during dry and wet oxidation

The determination of strain in Si-Ge superlattices by electron diffraction in a scanning transmission electron microscope

The electrical assessment of p-isotype Si/SiGe/Si heterostructures grown by MBE

Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon

Electron beam induced damage of silicon germanium

An electronic phase transition in NiFe2O4?

Elemental boron and antimony doping of MBE Si and SiGe structures grown at temperatures below 600°C

Enhanced Velocity Overshoot and Transconductance in Si/Si(0.64)Ge(0.36)/Si pMOSFETs - Predictions for Deep Submicron Devices

Evidence of reduced self-heating in strained Si MOSFETs

Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs

Fabrication and characterization of one dimensional hole gas

Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Fully pseudomorphic Si/SiGe/Si heterostructures for p-channel field effect devices

Growth and characterisation of pseudomorphic Si/SiGe/Si heterostructures for P-channel field-effect transistors

High-Frequency Performance of Schottky Source/Drain Silicon pMOS Devices

High-spin low-spin transition in nickel ferrous ferrite under pressure

Hole transport in Si 0.8Ge 0.2 quantum wells at low temperatures

Hole transport in Si0.8Ge0.2 quantum wells at low temperatures

Impact ionisation in strained SiGe pMOSFETs

Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

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