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High-Frequency Performance of Schottky Source/Drain Silicon pMOS Devices

IEEE electron device letters, 2008-04, Vol.29 (4), p.396-398

2008

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IEEE_Xplore

Static and High-Frequency Behavior and Performance of Schottky-Barrier p-MOSFET Devices

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2796-2802

2007

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IEEE_Xplore

Evidence of reduced self-heating in strained Si MOSFETs

IEEE electron device letters, 2005-09, Vol.26 (9), p.684-686

2005

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IEEE_Xplore

Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

Solid-state electronics, 2007-05, Vol.51 (5), p.771-777

2007

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SiGe(C) epitaxial technologies—issues and prospectives

Thin solid films, 2002-06, Vol.412 (1), p.44-49

2002

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Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Solid-state electronics, 2014-08, Vol.98, p.93-98

2014

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Superconducting platinum silicide for electron cooling in silicon

Solid-state electronics, 2015-01, Vol.103, p.15-18

2015

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Comparison of electron–phonon and hole–phonon energy loss rates in silicon

Solid-state electronics, 2015-01, Vol.103, p.40-43

2015

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Improved effective mobility extraction in MOSFETs

Solid-state electronics, 2009-12, Vol.53 (12), p.1252-1256

2009

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Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Journal of applied physics, 2004-12, Vol.96 (11), p.6470-6476

2004

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Si/SiGe/Si pMOS performance : alloy scattering and other considerations

Thin solid films, 2000-07, Vol.369 (1-2), p.297-305

2000

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SiGe : heterostructures for CMOS technology

Thin solid films, 2000-05, Vol.367 (1-2), p.250-259

2000

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Impact ionisation in strained SiGe pMOSFETs

Electronics letters, 2005-08, Vol.41 (16), p.925-927

2005

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SiGe heterostructure CMOS circuits and applications

Solid-state electronics, 1999-08, Vol.43 (8), p.1497-1506

1999

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The determination of strain in Si-Ge superlattices by electron diffraction in a scanning transmission electron microscope

Journal of crystal growth, 1991-05, Vol.111 (1), p.925-930

1991

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Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si 0.3Ge 0.7 channel grown by MBE

Applied surface science, 2004, Vol.224 (1), p.265-269

2004

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Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

Applied surface science, 2004-03, Vol.224 (1-4), p.265-269

2004

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Fully pseudomorphic Si/SiGe/Si heterostructures for p-channel field effect devices

Thin solid films, 1997-02, Vol.294 (1), p.160-165

Whall, T.E.

1997

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p-channel SiGe heterostructures for field effect applications

Applied surface science, 1996-08, Vol.102, p.221-229

Whall, T.E.

1996

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Preparation of polycrystalline and monocrystalline Fe3−xTixO4spinels

Journal of crystal growth, 1984-11, Vol.69 (1), p.101-107

1984

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Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

Physica. B, Condensed matter, 2001-04, Vol.298 (1-4), p.496-500

2001

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Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications

Journal of crystal growth, 1995-12, Vol.157 (1), p.353-361

Whall, T.E.

1995

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Universality at a quantum Hall–Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system

Physica. E, Low-dimensional systems & nanostructures, 2000-02, Vol.6 (1-4), p.297-300

2000

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Low frequency noise measurements of p-channel Si/sub 1-x/Ge/sub x/ MOSFET's

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1484-1486

1999

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IEEE_Xplore

Spin precession observation in quantum corrections to resistance of Si 0.7Ge 0.3/Si 0.2Ge 0.8 heterostructure with 2DHG

Physica. E, Low-dimensional systems & nanostructures, 2003, Vol.18 (1), p.145-146

2003

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High-Frequency Performance of Schottky Source/Drain Silicon pMOS Devices

Static and High-Frequency Behavior and Performance of Schottky-Barrier p-MOSFET Devices

Evidence of reduced self-heating in strained Si MOSFETs

Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs

SiGe(C) epitaxial technologies—issues and prospectives

Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Superconducting platinum silicide for electron cooling in silicon

Comparison of electron–phonon and hole–phonon energy loss rates in silicon

Improved effective mobility extraction in MOSFETs

Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Si/SiGe/Si pMOS performance : alloy scattering and other considerations

SiGe : heterostructures for CMOS technology

Impact ionisation in strained SiGe pMOSFETs

SiGe heterostructure CMOS circuits and applications

The determination of strain in Si-Ge superlattices by electron diffraction in a scanning transmission electron microscope

Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si 0.3Ge 0.7 channel grown by MBE

Low-frequency noise suppression and dc characteristics enhancement in sub-μm metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE

Fully pseudomorphic Si/SiGe/Si heterostructures for p-channel field effect devices

p-channel SiGe heterostructures for field effect applications

Preparation of polycrystalline and monocrystalline Fe3−xTixO4spinels

Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications

Universality at a quantum Hall–Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system

Low frequency noise measurements of p-channel Si/sub 1-x/Ge/sub x/ MOSFET's

Spin precession observation in quantum corrections to resistance of Si 0.7Ge 0.3/Si 0.2Ge 0.8 heterostructure with 2DHG

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