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Ultra-high hole mobility exceeding one million in a strained germanium quantum well

Applied physics letters, 2012-10, Vol.101 (17)

2012

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Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

Solid-state electronics, 2014-08, Vol.98, p.93-98

2014

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High-Frequency Performance of Schottky Source/Drain Silicon pMOS Devices

IEEE electron device letters, 2008-04, Vol.29 (4), p.396-398

2008

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SiGe heterostructures for FET applications

Journal of physics. D, Applied physics, 1998-06, Vol.31 (12), p.1397-1416

1998

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High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth

Semiconductor science and technology, 2004-10, Vol.19 (10), p.L106-L109

2004

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Si/SiGe/Si pMOS performance : alloy scattering and other considerations

Thin solid films, 2000-07, Vol.369 (1-2), p.297-305

2000

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Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p -type modulation-doped heterostructures

Applied physics letters, 2002-04, Vol.80 (17), p.3117-3119

2002

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Temperature dependence of transport properties of high mobility holes in Ge quantum wells

Journal of applied physics, 2005-04, Vol.97 (8), p.083701-083701-6

2005

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Hole Mobility in Germanium as a Function of Substrate and Channel Orientation, Strain, Doping, and Temperature

IEEE transactions on electron devices, 2012-07, Vol.59 (7), p.1878-1884

2012

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Interfacial Engineering of Semiconductor-Superconductor Junctions for High Performance Micro-Coolers

Scientific reports, 2015-12, Vol.5 (1), p.17398-17398, Article 17398

2015

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A strained silicon cold electron bolometer using Schottky contacts

Applied physics letters, 2014-07, Vol.105 (4)

2014

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SiGe : heterostructures for CMOS technology

Thin solid films, 2000-05, Vol.367 (1-2), p.250-259

2000

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Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Journal of applied physics, 2004-12, Vol.96 (11), p.6470-6476

2004

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Analysis of hole mobility and strain in a Si/Si0.5Ge0.5/Si metal oxide semiconductor field effect transistor

Semiconductor science and technology, 2002-07, Vol.17 (7), p.708-715

2002

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Evidence for quantum confinement in the photoluminescence of porous Si and SiGe

Applied physics letters, 1991-10, Vol.59 (17), p.2118-2120

1991

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SiGe(C) epitaxial technologies—issues and prospectives

Thin solid films, 2002-06, Vol.412 (1), p.44-49

2002

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Investigation of the injection velocity of holes in strained Si pMOSFETs

Semiconductor science and technology, 2005-05, Vol.20 (5), p.L20-L22

2005

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Impact ionization in strained Si devices

Journal of applied physics, 2005-11, Vol.98 (10), p.104502-104502-4

2005

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Dynamic threshold mode operation of p-channel Si and strained-SiGe MOSFETs between 10 K and 300 K

Semiconductor science and technology, 2004-09, Vol.19 (9), p.L95-L98

2004

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Low-frequency noise mechanisms in Si and pseudomorphic SiGe p-channel field-effect transistors

Applied physics letters, 2004-12, Vol.85 (24), p.6019-6021

2004

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Halo implant in pseudomorphic SiGe channel p-MOSFET devices to reduce short channel effect

Semiconductor science and technology, 2005-08, Vol.20 (8), p.673-676, Article 673

2005

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Performance enhancement in Si/Si0.5Ge0.5/Si strained alloy p-channel metal oxide semiconductor field effect transistors

Semiconductor science and technology, 2003-11, Vol.18 (11), p.945-949

2003

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Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor

Applied physics letters, 2004-01, Vol.84 (4), p.610-612

2004

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Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures

Journal of applied physics, 2001-01, Vol.89 (1), p.76-79

2001

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Impact ionisation in strained SiGe pMOSFETs

Electronics letters, 2005-08, Vol.41 (16), p.925-927

2005

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Ultra-high hole mobility exceeding one million in a strained germanium quantum well

Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

High-Frequency Performance of Schottky Source/Drain Silicon pMOS Devices

SiGe heterostructures for FET applications

High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth

Si/SiGe/Si pMOS performance : alloy scattering and other considerations

Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p -type modulation-doped heterostructures

Temperature dependence of transport properties of high mobility holes in Ge quantum wells

Hole Mobility in Germanium as a Function of Substrate and Channel Orientation, Strain, Doping, and Temperature

Interfacial Engineering of Semiconductor-Superconductor Junctions for High Performance Micro-Coolers

A strained silicon cold electron bolometer using Schottky contacts

SiGe : heterostructures for CMOS technology

Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

Analysis of hole mobility and strain in a Si/Si0.5Ge0.5/Si metal oxide semiconductor field effect transistor

Evidence for quantum confinement in the photoluminescence of porous Si and SiGe

SiGe(C) epitaxial technologies—issues and prospectives

Investigation of the injection velocity of holes in strained Si pMOSFETs

Impact ionization in strained Si devices

Dynamic threshold mode operation of p-channel Si and strained-SiGe MOSFETs between 10 K and 300 K

Low-frequency noise mechanisms in Si and pseudomorphic SiGe p-channel field-effect transistors

Halo implant in pseudomorphic SiGe channel p-MOSFET devices to reduce short channel effect

Performance enhancement in Si/Si0.5Ge0.5/Si strained alloy p-channel metal oxide semiconductor field effect transistors

Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor

Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures

Impact ionisation in strained SiGe pMOSFETs

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