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Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds

Journal of crystal growth, 2014-10, Vol.403, p.48-54

2014

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Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds

Journal of crystal growth, 2014-12, Vol.407, p.52-57

2014

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HVPE-GaN growth on misoriented ammonothermal GaN seeds

Journal of crystal growth, 2014-10, Vol.403, p.32-37

2014

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Defect-selective etching of GaN in a modified molten bases system

Journal of crystal growth, 2002-12, Vol.246 (1), p.21-24

2002

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Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism

Journal of crystal growth, 2010-08, Vol.312 (16), p.2398-2403

2010

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Thick GaN layers grown by HVPE: Influence of the templates

Journal of crystal growth, 2008-08, Vol.310 (17), p.3957-3963

2008

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Defect selective photoetching of GaN: Progress, applications and prospects

Progress in crystal growth and characterization of materials, 2024-05, Vol.70 (2), p.100623, Article 100623

2024

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Relationship between the nano-structure of GaN surfaces and SERS efficiency: Chasing hot-spots

Applied surface science, 2019-02, Vol.466, p.554-561

2019

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Chemical polishing of bulk and epitaxial GaN

Journal of crystal growth, 1997-12, Vol.182 (1-2), p.17-22

1997

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An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology

Journal of crystal growth, 2005-01, Vol.273 (3), p.347-356

2005

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Defects in GaN single crystals and homoepitaxial structures

Journal of crystal growth, 2005-07, Vol.281 (1), p.135-142

2005

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Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology

Journal of crystal growth, 2002-04, Vol.240 (1), p.14-21

2002

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Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy

Journal of crystal growth, 2003-08, Vol.255 (3), p.241-249

2003

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Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods

Superlattices and microstructures, 2006-10, Vol.40 (4), p.279-288

Weyher, J.L.

2006

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Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation

Journal of crystal growth, 2000-03, Vol.210 (4), p.435-443

2000

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Au–Cu Alloyed Plasmonic Layer on Nanostructured GaN for SERS Application

Journal of physical chemistry. C, 2016-01, Vol.120 (3), p.1841-1846

2016

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Electrochemical etching of highly conductive GaN single crystals

Journal of crystal growth, 2001-02, Vol.222 (4), p.735-740

2001

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Nanostructured GaN sensors for Surface Enhanced Raman Spectroscopy

Materials science in semiconductor processing, 2019-03, Vol.91, p.97-101

2019

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Principles of electroless photoetching of non-uniformly doped GaN: Kinetics and defect revealing

Journal of crystal growth, 2015-11, Vol.430, p.21-27

2015

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Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.318-321

2001

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The K2S2O8–KOH photoetching system for GaN

Journal of crystal growth, 2010-09, Vol.312 (18), p.2607-2610

2010

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Photo-etching of GaN: Revealing nano-scale non-homogeneities

Journal of crystal growth, 2015-09, Vol.426, p.153-158

2015

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Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates

Journal of crystal growth, 2015-10, Vol.427, p.1-6

2015

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Orthodox etching of HVPE-grown GaN

Journal of crystal growth, 2007-07, Vol.305 (2), p.384-392

2007

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Diffusion of oxygen in bulk GaN crystals at high temperature and at high pressure

Journal of crystal growth, 2016-09, Vol.449, p.35-42

2016

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Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds

Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds

HVPE-GaN growth on misoriented ammonothermal GaN seeds

Defect-selective etching of GaN in a modified molten bases system

Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism

Thick GaN layers grown by HVPE: Influence of the templates

Defect selective photoetching of GaN: Progress, applications and prospects

Relationship between the nano-structure of GaN surfaces and SERS efficiency: Chasing hot-spots

Chemical polishing of bulk and epitaxial GaN

An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology

Defects in GaN single crystals and homoepitaxial structures

Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology

Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy

Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods

Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation

Au–Cu Alloyed Plasmonic Layer on Nanostructured GaN for SERS Application

Electrochemical etching of highly conductive GaN single crystals

Nanostructured GaN sensors for Surface Enhanced Raman Spectroscopy

Principles of electroless photoetching of non-uniformly doped GaN: Kinetics and defect revealing

Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy

The K2S2O8–KOH photoetching system for GaN

Photo-etching of GaN: Revealing nano-scale non-homogeneities

Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates

Orthodox etching of HVPE-grown GaN

Diffusion of oxygen in bulk GaN crystals at high temperature and at high pressure

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