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Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates

Journal of crystal growth, 2015-10, Vol.427, p.1-6

2015

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Analysis of Large Impurity Atmospheres at Dislocations and Associated Point Defect Reactions in Differently n-Doped GaAs Crystals

Journal de physique. III (Les Ulis), 1997-12, Vol.7 (12), p.2339-2360

1997

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Analysis of peculiar structural defects created in GaAs by diffusion of copper

Journal of crystal growth, 2000-03, Vol.210 (1), p.177-181

2000

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Anodic etching of SiC in alkaline solutions

Journal of micromechanics and microengineering, 2007-04, Vol.17 (4), p.S50-S55

2007

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Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures

European physical journal. Applied physics, 2004-07, Vol.27 (1-3), p.247-249

2004

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Au–Cu Alloyed Plasmonic Layer on Nanostructured GaN for SERS Application

Journal of physical chemistry. C, 2016-01, Vol.120 (3), p.1841-1846

2016

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Binding Mode of TMC-95A Analogues to Eukaryotic 20S Proteasome

Chembiochem : a European journal of chemical biology, 2004-09, Vol.5 (9), p.1256-1266

2004

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Blue Laser on High N 2 Pressure-Grown Bulk GaN

Acta physica Polonica, A, 2001-12, Vol.100 (Supplement), p.229-232

2001

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Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope

Journal of applied physics, 2002-08, Vol.92 (4), p.2000-2005

2002

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Chalcogen-analogs of amino acids. Their use in X-ray crystallographic and folding studies of peptides and proteins

Biological chemistry, 1997-03, Vol.378 (3-4), p.211

1997

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Characterization of GaAs solar cells made by ion implantation and rapid thermal annealing using selective photoetching

Journal of materials research, 1990-05, Vol.5 (5), p.1042-1051

1990

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Characterization of GaN single crystals by defect-selective etching

Physica status solidi. C, 2003-02 (3), p.821-826

2003

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Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods

Superlattices and microstructures, 2006-10, Vol.40 (4), p.279-288

Weyher, J.L.

2006

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Chemical Etching of GaN in KOH Solution: Role of Surface Polarity and Prior Photoetching

Journal of physical chemistry. C, 2022-01, Vol.126 (2), p.1115-1124

2022

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Chemical polishing of bulk and epitaxial GaN

Journal of crystal growth, 1997-12, Vol.182 (1-2), p.17-22

1997

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ChemInform Abstract: Kinetics and Morphology of GaAs Etching in Aqueous CrO 3 ‐ HF Solutions

Chemischer Informationsdienst, 1986-08, Vol.17 (33)

1986

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Circular Dichroism Study on Fully Bioactive CCK-Peptides of Increasing Chain Length

Zeitschrift für Naturforschung. B, A journal of chemical sciences, 1993-10, Vol.48 (10), p.1419-1430

1993

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Color lines in contemporary America

Labor history, 2005-02, Vol.46 (1), p.3-98

2005

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Combined use of EBIC and DSL photoetching for the quantitative assessment of defect properties in LEC GaAs

Journal of crystal growth, 1990-06, Vol.103 (1), p.268-274

1990

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Comparative study of microdefects in dislocation-free, heavily Si doped VB GaAs by DSL etching, NIR phase contrast microscopy, TEM and X-ray diffuse scattering

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-02, Vol.44 (1), p.242-247

1997

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Complementary DSL, EBIC and PL study of grown-in defects in Si-doped GaAs crystals grown under Ga- and As-rich conditions by LEC method

Journal of crystal growth, 1990-06, Vol.103 (1), p.46-53

1990

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Complementary study of defects in GaN by photo-etching and TEM

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-04, Vol.91, p.280-284

2002

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Crystallographic Defects in (001) GaAs Epitaxial Layers Grown by MOCVD

Journal of the Electrochemical Society, 1987-04, Vol.134 (4), p.989-997

1987

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Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates

Physica status solidi. A, Applications and materials science, 2007-12, Vol.204 (12), p.4230-4240

2007

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Defect-selective etching of GaN in a modified molten bases system

Journal of crystal growth, 2002-12, Vol.246 (1), p.21-24

2002

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Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates

Analysis of Large Impurity Atmospheres at Dislocations and Associated Point Defect Reactions in Differently n-Doped GaAs Crystals

Analysis of peculiar structural defects created in GaAs by diffusion of copper

Anodic etching of SiC in alkaline solutions

Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures

Au–Cu Alloyed Plasmonic Layer on Nanostructured GaN for SERS Application

Binding Mode of TMC-95A Analogues to Eukaryotic 20S Proteasome

Blue Laser on High N 2 Pressure-Grown Bulk GaN

Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope

Chalcogen-analogs of amino acids. Their use in X-ray crystallographic and folding studies of peptides and proteins

Characterization of GaAs solar cells made by ion implantation and rapid thermal annealing using selective photoetching

Characterization of GaN single crystals by defect-selective etching

Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods

Chemical Etching of GaN in KOH Solution: Role of Surface Polarity and Prior Photoetching

Chemical polishing of bulk and epitaxial GaN

ChemInform Abstract: Kinetics and Morphology of GaAs Etching in Aqueous CrO 3 ‐ HF Solutions

Circular Dichroism Study on Fully Bioactive CCK-Peptides of Increasing Chain Length

Color lines in contemporary America

Combined use of EBIC and DSL photoetching for the quantitative assessment of defect properties in LEC GaAs

Comparative study of microdefects in dislocation-free, heavily Si doped VB GaAs by DSL etching, NIR phase contrast microscopy, TEM and X-ray diffuse scattering

Complementary DSL, EBIC and PL study of grown-in defects in Si-doped GaAs crystals grown under Ga- and As-rich conditions by LEC method

Complementary study of defects in GaN by photo-etching and TEM

Crystallographic Defects in (001) GaAs Epitaxial Layers Grown by MOCVD

Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates

Defect-selective etching of GaN in a modified molten bases system

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