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Extended Defects in SiC: Selective Etching and Raman Study

Journal of electronic materials, 2023-08, Vol.52 (8), p.5039-5046

2023

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Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds

Journal of crystal growth, 2014-10, Vol.403, p.48-54

2014

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Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds

Journal of crystal growth, 2014-12, Vol.407, p.52-57

2014

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Orthodox etching of HVPE-grown GaN

Journal of crystal growth, 2007-07, Vol.305 (2), p.384-392

2007

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HVPE-GaN growth on misoriented ammonothermal GaN seeds

Journal of crystal growth, 2014-10, Vol.403, p.32-37

2014

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Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange

Journal of crystal growth, 2014-10, Vol.403, p.77-82

2014

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Imaging extended non-homogeneities in HVPE grown GaN with Kelvin Probe Microscopy and photo-etching

Journal of crystal growth, 2012-08, Vol.353 (1), p.68-71

2012

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Chemical Etching of GaN in KOH Solution: Role of Surface Polarity and Prior Photoetching

Journal of physical chemistry. C, 2022-01, Vol.126 (2), p.1115-1124

2022

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Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism

Journal of crystal growth, 2010-08, Vol.312 (16), p.2398-2403

2010

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The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy

Journal of crystal growth, 2007-09, Vol.307 (2), p.298-301

2007

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Thick GaN layers grown by HVPE: Influence of the templates

Journal of crystal growth, 2008-08, Vol.310 (17), p.3957-3963

2008

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Defect-selective etching of GaN in a modified molten bases system

Journal of crystal growth, 2002-12, Vol.246 (1), p.21-24

2002

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Anodic etching of SiC in alkaline solutions

Journal of micromechanics and microengineering, 2007-04, Vol.17 (4), p.S50-S55

2007

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Defect-selective etching of SiC

Physica status solidi. A, Applications and materials science, 2005-03, Vol.202 (4), p.578-583

2005

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Defect sensitive etching of nitrides: appraisal of methods

Crystal research and technology (1979), 2012-03, Vol.47 (3), p.333-340

Weyher, J. L.

2012

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Principles of electroless photoetching of non-uniformly doped GaN: Kinetics and defect revealing

Journal of crystal growth, 2015-11, Vol.430, p.21-27

2015

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Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits

Applied physics letters, 2009-07, Vol.95 (3), p.31913

2009

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On the hydrophobicity of modified Ga-polar GaN surfaces

Applied physics letters, 2013-01, Vol.102 (4)

2013

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Defects in GaN single crystals and homoepitaxial structures

Journal of crystal growth, 2005-07, Vol.281 (1), p.135-142

2005

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Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals

Applied physics letters, 1998-08, Vol.73 (5), p.668-670

1998

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Photo-etching of GaN: Revealing nano-scale non-homogeneities

Journal of crystal growth, 2015-09, Vol.426, p.153-158

2015

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Chemical polishing of bulk and epitaxial GaN

Journal of crystal growth, 1997-12, Vol.182 (1-2), p.17-22

1997

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Nonradiative recombination at threading dislocations in n -type GaN: Studied by cathodoluminescence and defect selective etching

Applied physics letters, 2008-06, Vol.92 (23), p.231909-231909-3

2008

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Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition

Physical review. B, Condensed matter and materials physics, 2005-02, Vol.71 (7), p.073309.1-073309.4, Article 073309

2005

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Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates

Journal of crystal growth, 2015-10, Vol.427, p.1-6

2015

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Extended Defects in SiC: Selective Etching and Raman Study

Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds

Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds

Orthodox etching of HVPE-grown GaN

HVPE-GaN growth on misoriented ammonothermal GaN seeds

Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchange

Imaging extended non-homogeneities in HVPE grown GaN with Kelvin Probe Microscopy and photo-etching

Chemical Etching of GaN in KOH Solution: Role of Surface Polarity and Prior Photoetching

Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism

The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy

Thick GaN layers grown by HVPE: Influence of the templates

Defect-selective etching of GaN in a modified molten bases system

Anodic etching of SiC in alkaline solutions

Defect-selective etching of SiC

Defect sensitive etching of nitrides: appraisal of methods

Principles of electroless photoetching of non-uniformly doped GaN: Kinetics and defect revealing

Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits

On the hydrophobicity of modified Ga-polar GaN surfaces

Defects in GaN single crystals and homoepitaxial structures

Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals

Photo-etching of GaN: Revealing nano-scale non-homogeneities

Chemical polishing of bulk and epitaxial GaN

Nonradiative recombination at threading dislocations in n -type GaN: Studied by cathodoluminescence and defect selective etching

Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition

Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates

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