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Growth and properties of m-plane GaN on m-plane sapphire by metalorganic chemical vapor deposition

Journal of crystal growth, 2013-03, Vol.367, p.104-109

2013

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New thickness and shape parameters for the boundary layer velocity profile

Experimental thermal and fluid science, 2014-04, Vol.54, p.22-28

Weyburne, David W.

2014

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A mathematical description of the fluid boundary layer

Applied mathematics and computation, 2006-04, Vol.175 (2), p.1675-1684

Weyburne, David W.

2006

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X-ray diffraction analysis of structural defects in a-plane GaN grown on r-plane sapphire by MOCVD

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.469-472

2014

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Photoluminescence of m-plane GaN grown on m-plane sapphire by MOCVD

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.778-781

2014

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Approximate heat transfer coefficients based on variable thermophysical properties for laminar flow over a uniformly heated flat plate

Heat and mass transfer, 2008-05, Vol.44 (7), p.805-813

Weyburne, David W.

2008

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ENERGY BAND GAP OF AlxGa1-xN

Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 4A, pp. 1936-1940. 2002, 2002, Vol.41 (4A), p.1936-1940

2002

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Effect of basal-plane stacking faults on the Bragg peak broadening in m-plane GaN

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2251-2254

2011

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A new method for predicting thermal flow stability: application to a heated rotating disk

Journal of crystal growth, 2002-05, Vol.240 (3), p.569-580

2002

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Erratum to “A mathematical description of the fluid boundary layer” [Appl. Math. Comput. 175 (2) (2006) 1675–1684]

Applied mathematics and computation, 2008-03, Vol.197 (1), p.466-466

Weyburne, David W.

2008

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Growth and properties of m-plane GaN on m-plane sapphire by metali,organic chemical vapor deposition

Journal of crystal growth, 2013-03, Vol.367, p.104-109

2013

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An X-ray diffraction technique for analyzing basal-plane stacking faults in GaN

Physica status solidi. A, Applications and materials science, 2010-11, Vol.207 (11), p.2446-2455

2010

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An X-ray diffraction technique for application analyzing basal-plane stacking faults in GaN

Physica status solidi. A, Applications and materials science, 2010, Vol.207 (11), p.2446-2455

2010

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High vacuum end cap design for use with quartz tubes

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2004-05, Vol.22 (3), p.734-734

2004

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Design and operating considerations for a water-cooled close-spaced reactant injector in a production scale MOCVD reactor

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.77-82

1997

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Simultaneous determination of the compositions and thicknesses of a multilayer film using spectroreflectometry

Journal of applied physics, 1998-09, Vol.84 (6), p.3422-3424

1998

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The Energy Band Gap of Al x Ga 1- x N

Japanese Journal of Applied Physics, 2002-04, Vol.41 (Part 1, No. 4A), p.1936-1940

2002

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Investigation of near interface properties in semi-insulating InP substrates with epitaxial grown InGaAs and InAlAs by photoreflectance

Journal of applied physics, 1993, Vol.73 (3), p.1266-1271

1993

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Finite Element Analysis of a MOCVD Reactor Having a Close-Spaced Injector

MRS proceedings, 1997, Vol.490, Article 193

1997

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Variable property similarity transform: Application to axisymmetric fluid flow against a heated disk

Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics, 1998-12, Vol.58 (6), p.7402-7409

Weyburne, David W.

1998

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Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures

Applied physics letters, 1994-06, Vol.64 (24), p.3314-3316

1994

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Growth and properties of m-plane GaN on m-plane sapphire by metalorganic chemical vapor deposition

New thickness and shape parameters for the boundary layer velocity profile

A mathematical description of the fluid boundary layer

X-ray diffraction analysis of structural defects in a-plane GaN grown on r-plane sapphire by MOCVD

Photoluminescence of m-plane GaN grown on m-plane sapphire by MOCVD

Approximate heat transfer coefficients based on variable thermophysical properties for laminar flow over a uniformly heated flat plate

ENERGY BAND GAP OF AlxGa1-xN

Effect of basal-plane stacking faults on the Bragg peak broadening in m-plane GaN

A new method for predicting thermal flow stability: application to a heated rotating disk

Erratum to “A mathematical description of the fluid boundary layer” [Appl. Math. Comput. 175 (2) (2006) 1675–1684]

Growth and properties of m-plane GaN on m-plane sapphire by metali,organic chemical vapor deposition

An X-ray diffraction technique for analyzing basal-plane stacking faults in GaN

An X-ray diffraction technique for application analyzing basal-plane stacking faults in GaN

High vacuum end cap design for use with quartz tubes

Design and operating considerations for a water-cooled close-spaced reactant injector in a production scale MOCVD reactor

Simultaneous determination of the compositions and thicknesses of a multilayer film using spectroreflectometry

The Energy Band Gap of Al x Ga 1- x N

Investigation of near interface properties in semi-insulating InP substrates with epitaxial grown InGaAs and InAlAs by photoreflectance

Finite Element Analysis of a MOCVD Reactor Having a Close-Spaced Injector

Variable property similarity transform: Application to axisymmetric fluid flow against a heated disk

Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures

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