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Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs

Scientific reports, 2019-01, Vol.9 (1), p.202-202, Article 202

2019

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Vertical high-mobility wrap-gated InAs nanowire transistor

IEEE electron device letters, 2006-05, Vol.27 (5), p.323-325

2006

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Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor

IEEE electron device letters, 2017-12, Vol.38 (12), p.1661-1664

2017

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Narrow gap nanowires: From nanotechnology to RF-circuits on Si

Journal of applied physics, 2015-03, Vol.117 (11), p.112810

Wernersson, L.-E.

2015

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Vertical nanowire III–V MOSFETs with improved high-frequency gain

Electronics letters, 2020-06, Vol.56 (13), p.669-671

2020

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Picosecond dynamics in a millimetre-wave RTD–MOSFET wavelet generator

Electronics letters, 2015-10, Vol.51 (21), p.1671-1673

2015

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High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz

Electronics letters, 2016-10, Vol.52 (22), p.1869-1871

2016

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A transmission line method for evaluation of vertical InAs nanowire contacts

Applied physics letters, 2015-12, Vol.107 (23)

2015

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Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric

Applied physics letters, 2015-05, Vol.106 (20)

2015

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Correlation-induced conductance suppression at level degeneracy in a quantum dot

Physical review letters, 2010-05, Vol.104 (18), p.186804-186804, Article 186804

2010

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Surface and core contribution to 1/ f -noise in InAs nanowire metal-oxide-semiconductor field-effect transistors

Applied physics letters, 2013-07, Vol.103 (3), p.033508

2013

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Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate

IEEE electron device letters, 2008-03, Vol.29 (3), p.206-208

2008

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Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GHz and fmax > 20 GHz

Nano letters, 2010-03, Vol.10 (3), p.809-812

2010

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Time-Resolved X‑ray Diffraction Investigation of the Modified Phonon Dispersion in InSb Nanowires

Nano letters, 2014-02, Vol.14 (2), p.541-546

2014

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InAs nanowire MOSFET differential active mixer on Si-substrate

Electronics letters, 2014-04, Vol.50 (9), p.682-683

2014

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Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates

Applied physics letters, 2012-03, Vol.100 (13), p.3

2012

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InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices

IEEE journal of selected topics in quantum electronics, 2011-07, Vol.17 (4), p.907-914

2011

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Development of a Vertical Wrap-Gated InAs FET

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3030-3036

2008

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Wideband and non-dispersive wavelet transmission using leaky lens antenna

Electronics letters, 2013-02, Vol.49 (5), p.321-322

2013

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Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs

IEEE transactions on electron devices, 2009-02, Vol.56 (2), p.201-205

2009

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Deposition of HfO2 on InAs by atomic-layer deposition

16th Biennial Conference on Insulating Films on Semiconductors,2009-06-28 - 2009-07-07, 2009-07, Vol.86 (7-9), p.1561-1563

2009

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Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3037-3041

2008

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Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging

New journal of physics, 2010-03, Vol.12 (3), p.035013

2010

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Partially depleted SOI MOSFETs under uniaxial tensile strain

IEEE transactions on electron devices, 2004-03, Vol.51 (3), p.317-323

2004

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The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017, p.273-276

2017

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Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs

Vertical high-mobility wrap-gated InAs nanowire transistor

Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor

Narrow gap nanowires: From nanotechnology to RF-circuits on Si

Vertical nanowire III–V MOSFETs with improved high-frequency gain

Picosecond dynamics in a millimetre-wave RTD–MOSFET wavelet generator

High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz

A transmission line method for evaluation of vertical InAs nanowire contacts

Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric

Correlation-induced conductance suppression at level degeneracy in a quantum dot

Surface and core contribution to 1/ f -noise in InAs nanowire metal-oxide-semiconductor field-effect transistors

Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate

Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GHz and fmax > 20 GHz

Time-Resolved X‑ray Diffraction Investigation of the Modified Phonon Dispersion in InSb Nanowires

InAs nanowire MOSFET differential active mixer on Si-substrate

Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates

InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices

Development of a Vertical Wrap-Gated InAs FET

Wideband and non-dispersive wavelet transmission using leaky lens antenna

Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs

Deposition of HfO2 on InAs by atomic-layer deposition

Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates

Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging

Partially depleted SOI MOSFETs under uniaxial tensile strain

The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs

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