UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

A Study of the Trinity of School Sports, Social Sports, and Family Sports in the Context of Information Theory

Applied mathematics and nonlinear sciences, 2024-01, Vol.9 (1)

Weng, You

2024

Volltextzugriff (PDF)

Effect of TiN barrier layer in Cu-based ohmic contact of AlGaN/GaN high electron mobility transistor

Semiconductor science and technology, 2023-08, Vol.38 (8), p.84001

2023

Volltextzugriff (PDF)

RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface

Physica status solidi. A, Applications and materials science, 2017-07, Vol.214 (7), p.n/a

2017

Volltextzugriff (PDF)

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

Materials, 2023-04, Vol.16 (9), p.3376

2023

Volltextzugriff (PDF)

Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

Volltextzugriff (PDF)

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8), p.n/a

2023

Volltextzugriff (PDF)

Minimum Power Input Control for Class-E Amplifier Using Depletion-Mode Gallium Nitride High Electron Mobility Transistor

Energies (Basel), 2021-04, Vol.14 (8), p.2302

2021

Volltextzugriff (PDF)

Impact of Radiotherapy Combined With Chemotherapy on Long-Term Outcomes of Patients With Recurrent Nasopharyngeal Carcinoma

Technology in cancer research & treatment, 2023-01, Vol.22, p.15330338231155721-15330338231155721

2023

Volltextzugriff (PDF)

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

Materials, 2022-01, Vol.15 (3), p.703

2022

Volltextzugriff (PDF)

Oral Exposure to Epoxiconazole Disturbed the Gut Micro-Environment and Metabolic Profiling in Male Mice

Metabolites, 2023-04, Vol.13 (4), p.522

2023

Volltextzugriff (PDF)

The effect of the barrier thickness on DC and RF performances of AlGaN/GaN HEMTs on silicon

Semiconductor science and technology, 2023-07, Vol.38 (7), p.74004

2023

Volltextzugriff (PDF)

E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High Vth Stability by Field Plate Engineering

IEEE electron device letters, 2021-09, Vol.42 (9), p.1268-1271

2021

Volltextzugriff (PDF)

Triggering Fbw7-mediated proteasomal degradation of c-Myc by oridonin induces cell growth inhibition and apoptosis

Molecular cancer therapeutics, 2012-05, Vol.11 (5), p.1155-1165

2012

Volltextzugriff (PDF)

Antimicrobial and the Resistances in the Environment: Ecological and Health Risks, Influencing Factors, and Mitigation Strategies

Toxics (Basel), 2023-02, Vol.11 (2), p.185

2023

Volltextzugriff (PDF)

Enhancement of electron transport properties of InAlGaN/AlN/GaN HEMTs on silicon substrate with GaN insertion layer

Applied physics express, 2020-06, Vol.13 (6), p.65501

2020

Volltextzugriff (PDF)

Effect of Local Substrate Removal and Backside Al Heat Dissipation Layer on GaN-on-Si Device RF Performance

ECS journal of solid state science and technology, 2023-09, Vol.12 (9), p.95005

2023

Volltextzugriff (PDF)

Gadolinium-loaded calcium phosphate nanoparticles for magnetic resonance imaging of orthotopic hepatocarcinoma and primary hepatocellular carcinoma

Biomaterials science, 2020-03, Vol.8 (7), p.1961-1972

2020

Volltextzugriff (PDF)

Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages

Micromachines (Basel), 2022-12, Vol.13 (12), p.2140

2022

Volltextzugriff (PDF)

Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack

IEEE journal of the Electron Devices Society, 2022-01, Vol.10, p.525-531

2022

Volltextzugriff (PDF)

Ferroelectric-like behavior in HfO2/Al2O3/AlN metal-insulator-semiconductor capacitor through AlN thermal stress

Materials research express, 2022-10, Vol.9 (10), p.105903

2022

Volltextzugriff (PDF)

High Current Density and Low Ron Quaternary InAlGaN MIS-HEMT on Si for Power Applications

ECS journal of solid state science and technology, 2023-07, Vol.12 (7), p.75003

2023

Volltextzugriff (PDF)

InGaZnO Ferroelectric Thin-Film Transistor Using HfO₂/Al₂O₃/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window

IEEE electron device letters, 2022-12, Vol.43 (12), p.2105-2108

2022

Volltextzugriff (PDF)

Effects on RF Performance for AlGaN/GaN HEMT on Si Substrate with AlGaN Buffer Engineering

ECS journal of solid state science and technology, 2023-03, Vol.12 (3), p.35002

2023

Volltextzugriff (PDF)

E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High V th Stability by Field Plate Engineering

IEEE electron device letters, 2021-09, Vol.42 (9), p.1268-1271

2021

Volltextzugriff (PDF)

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8), p.n/a

2023

Volltextzugriff (PDF)

1 – 25 von 79.561

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(62.283)
Mit Volltextzugriff
(66.406)

Publikationsform

9 weitere anzeigen...

Weniger anzeigen...

Sprache

8 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(50.811)
Life Sciences & Biomedicine
(22.361)
Technology
(19.532)
Physical Sciences
(17.775)
Humans
(11.378)
Engineering
(9.430)
Chemistry
(7.779)
Materials Science
(6.580)
Male
(6.068)
Female
(5.849)
Physics
(5.523)
Animals
(5.080)
Materials Science, Multidisciplinary
(4.690)
Engineering, Electrical & Electronic
(4.363)
Computer Science
(4.294)
Science & Technology - Other Topics
(4.098)
Exact Sciences And Technology
(3.590)
Middle Aged
(3.445)
Adult
(3.223)
Physics, Applied
(2.996)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

IngentaConnect
(34.707)
Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals
(29.705)
MEDLINE
(16.645)
Access via ScienceDirect (Elsevier)
(14.556)
IngentaConnect Journals
(14.530)
Access via Wiley Online Library
(10.936)
Journals@Ovid Ovid Full Text
(10.551)
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
(8.712)
IEEE Electronic Library (IEL)
(7.377)
Single Journals
(6.271)
SpringerNature Journals
(6.228)
Wiley Online Library Full Collection 2018
(5.213)
EZB-NALI2-00462 Springer Archive NL
(3.662)
Ebook Central Perpetual and DDA
(3.185)
eBooks on EBSCOhost
(3.114)
Access via Taylor & Francis
(2.211)
Access via Taylor & Francis
(1.998)
Taylor & Francis Current Content Access
(1.960)
Nature
(1.625)
Access via Oxford University Press
(1.106)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

Acta Crystallographica. Section E, Structure Reports Online
(3.559)
Acta Crystallographica. Section E
(1.109)
Acta Crystallographica. Section E, Crystallographic Communications
(956)
Plos One
(716)
E3s Web Of Conferences
(481)
Scientific Reports
(461)
Ssrn Electronic Journal
(357)
Blood
(340)
Materials Science Forum
(304)
Acs Applied Materials & Interfaces
(294)

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

A Study of the Trinity of School Sports, Social Sports, and Family Sports in the Context of Information Theory

Effect of TiN barrier layer in Cu-based ohmic contact of AlGaN/GaN high electron mobility transistor

RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

Minimum Power Input Control for Class-E Amplifier Using Depletion-Mode Gallium Nitride High Electron Mobility Transistor

Impact of Radiotherapy Combined With Chemotherapy on Long-Term Outcomes of Patients With Recurrent Nasopharyngeal Carcinoma

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

Oral Exposure to Epoxiconazole Disturbed the Gut Micro-Environment and Metabolic Profiling in Male Mice

The effect of the barrier thickness on DC and RF performances of AlGaN/GaN HEMTs on silicon

E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High Vth Stability by Field Plate Engineering

Triggering Fbw7-mediated proteasomal degradation of c-Myc by oridonin induces cell growth inhibition and apoptosis

Antimicrobial and the Resistances in the Environment: Ecological and Health Risks, Influencing Factors, and Mitigation Strategies

Enhancement of electron transport properties of InAlGaN/AlN/GaN HEMTs on silicon substrate with GaN insertion layer

Effect of Local Substrate Removal and Backside Al Heat Dissipation Layer on GaN-on-Si Device RF Performance

Gadolinium-loaded calcium phosphate nanoparticles for magnetic resonance imaging of orthotopic hepatocarcinoma and primary hepatocellular carcinoma

Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages

Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack

Ferroelectric-like behavior in HfO2/Al2O3/AlN metal-insulator-semiconductor capacitor through AlN thermal stress

High Current Density and Low Ron Quaternary InAlGaN MIS-HEMT on Si for Power Applications

InGaZnO Ferroelectric Thin-Film Transistor Using HfO₂/Al₂O₃/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window

Effects on RF Performance for AlGaN/GaN HEMT on Si Substrate with AlGaN Buffer Engineering

E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High V th Stability by Field Plate Engineering

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

Suchergebnisse filtern