UB Paderborn / Katalog / Suche / in CDI

Semi-transparent NiO/ZnO UV photovoltaic cells

Physica status solidi. A, Applications and materials science, 2016-01, Vol.213 (1), p.30-37

2016

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High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition

Applied physics letters, 2003-06, Vol.82 (22), p.3901-3903

2003

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Low frequency noise of ZnO based metal-semiconductor field-effect transistors

Applied physics letters, 2015-01, Vol.106 (3)

2015

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Dielectric function in the NIR-VUV spectral range of (In x Ga1− x )2O3 thin films

Journal of applied physics, 2014-08, Vol.116 (5)

2014

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Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition

Nanotechnology, 2007-11, Vol.18 (45), p.455707-455707 (5)

2007

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Breakdown characteristics of flexible Cu(In,Ga)Se2 solar cells

Solar energy materials and solar cells, 2014-01, Vol.120, p.506-511

2014

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Realization of highly rectifying Schottky barrier diodes and pn heterojunctions on κ-Ga2O3 by overcoming the conductivity anisotropy

Journal of applied physics, 2021-08, Vol.130 (8)

2021

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Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality

APL materials, 2019-02, Vol.7 (2), p.022516-022516-11

2019

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Lateral homogeneity of Schottky contacts on n-type ZnO

Applied physics letters, 2004-01, Vol.84 (1), p.79-81

2004

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Electrical conductivity of In2O3 and Ga2O3 after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level

Journal of physics. Condensed matter, 2018-01, Vol.30 (2), p.025502-025502

2018

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Dielectric function in the spectral range (0.5–8.5)eV of an (AlxGa1−x)2O3 thin film with continuous composition spread

Journal of applied physics, 2015-04, Vol.117 (16)

2015

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High mobility, highly transparent, smooth, p-type CuI thin films grown by pulsed laser deposition

APL materials, 2020-09, Vol.8 (9), p.091115-091115-8

2020

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ZnO-based metal-semiconductor field-effect transistors on glass substrates

Applied physics letters, 2009-10, Vol.95 (15), p.153503-153503-3

2009

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Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials

Journal of physics. Condensed matter, 2020-09, Vol.32 (50), p.415704

2020

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Defect segregation and optical emission in ZnO nano- and microwires

Nanoscale, 2016-04, Vol.8 (14), p.7631-7637

2016

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Low voltage, high gain inverters based on amorphous zinc tin oxide on flexible substrates

APL materials, 2020-06, Vol.8 (6), p.061112-061112-7

2020

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Structural, optical, and electrical properties of orthorhombic κ-(InxGa1−x)2O3 thin films

APL materials, 2019-02, Vol.7 (2), p.022525-022525-9

2019

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Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon

Semiconductor science and technology, 2015-02, Vol.30 (2)

2015

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Demonstration of Two Multi‐Component Target Ablation Approaches and Their Application in Combinatorial Pulsed Laser Deposition

Advanced Physics Research, 2024-05, Vol.3 (5), p.n/a

2024

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Dielectric Passivation of ZnO-Based Schottky Diodes

Journal of electronic materials, 2010-05, Vol.39 (5), p.559-562

2010

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Growth, structural and optical properties of coherent κ-(AlxGa1−x)2O3/κ-Ga2O3 quantum well superlattice heterostructures

APL materials, 2020-05, Vol.8 (5), p.051112-051112-14

2020

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Evidence for oxygen being a dominant shallow acceptor in p-type CuI

APL materials, 2021-05, Vol.9 (5), p.051101-051101-9

2021

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Epitaxial κ-(AlxGa1−x)2O3 thin films and heterostructures grown by tin-assisted VCCS-PLD

APL materials, 2019-11, Vol.7 (11), p.111110-111110-8

2019

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Solubility limit and material properties of a κ-(AlxGa1−x)2O3 thin film with a lateral cation gradient on (00.1)Al2O3 by tin-assisted PLD

APL materials, 2020-02, Vol.8 (2), p.021103-021103-6

2020

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Epitaxial stabilization of single phase κ-(InxGa1−x)2O3 thin films up to x = 0.28 on c-sapphire and κ-Ga2O3(001) templates by tin-assisted VCCS-PLD

APL materials, 2019-10, Vol.7 (10), p.101102-101102-10

2019

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Semi-transparent NiO/ZnO UV photovoltaic cells

High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition

Low frequency noise of ZnO based metal-semiconductor field-effect transistors

Dielectric function in the NIR-VUV spectral range of (In x Ga1− x )2O3 thin films

Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition

Breakdown characteristics of flexible Cu(In,Ga)Se2 solar cells

Realization of highly rectifying Schottky barrier diodes and pn heterojunctions on κ-Ga2O3 by overcoming the conductivity anisotropy

Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality

Lateral homogeneity of Schottky contacts on n-type ZnO

Electrical conductivity of In2O3 and Ga2O3 after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level

Dielectric function in the spectral range (0.5–8.5)eV of an (AlxGa1−x)2O3 thin film with continuous composition spread

High mobility, highly transparent, smooth, p-type CuI thin films grown by pulsed laser deposition

ZnO-based metal-semiconductor field-effect transistors on glass substrates

Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials

Defect segregation and optical emission in ZnO nano- and microwires

Low voltage, high gain inverters based on amorphous zinc tin oxide on flexible substrates

Structural, optical, and electrical properties of orthorhombic κ-(InxGa1−x)2O3 thin films

Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon

Demonstration of Two Multi‐Component Target Ablation Approaches and Their Application in Combinatorial Pulsed Laser Deposition

Dielectric Passivation of ZnO-Based Schottky Diodes

Growth, structural and optical properties of coherent κ-(AlxGa1−x)2O3/κ-Ga2O3 quantum well superlattice heterostructures

Evidence for oxygen being a dominant shallow acceptor in p-type CuI

Epitaxial κ-(AlxGa1−x)2O3 thin films and heterostructures grown by tin-assisted VCCS-PLD

Solubility limit and material properties of a κ-(AlxGa1−x)2O3 thin film with a lateral cation gradient on (00.1)Al2O3 by tin-assisted PLD

Epitaxial stabilization of single phase κ-(InxGa1−x)2O3 thin films up to x = 0.28 on c-sapphire and κ-Ga2O3(001) templates by tin-assisted VCCS-PLD

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