UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 226

Sortiert nach

Stacked Ge-Nanosheet GAAFETs Fabricated by Ge/Si Multilayer Epitaxy

IEEE electron device letters, 2018-08, Vol.39 (8), p.1133-1136

2018

Link zum Volltext
IEEE_Xplore

Effects of the Molecular Chain Length of Polyimide on the Characteristics of Organic Resistive Random Access Memories

IEEE transactions on electron devices, 2020-01, Vol.67 (1), p.277-282

2020

Link zum Volltext
IEEE_Xplore

A Harmonic Radar Tag with High Detection Range Utilizing Ge FinFETs CMOS Technology

IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1

2022

Link zum Volltext
IEEE_Xplore

Advancements in single-crystal silicon with elevated-laser-liquid-phase-epitaxy (ELLPE) for monolithic 3D ICs

Japanese Journal of Applied Physics, 2024-04, Vol.63 (4), p.4

2024

Link zum Volltext

Verfügbarkeit prüfen

Multilevel Schottky Barrier Nanowire SONOS Memory With Ambipolar n- and p-Channel Cells

IEEE transactions on electron devices, 2012-06, Vol.59 (6), p.1614-1620

2012

Link zum Volltext
IEEE_Xplore

3-D Monolithic Stacking of Complementary-FET on CMOS for Next Generation Compute-In-Memory SRAM

IEEE journal of the Electron Devices Society, 2023, Vol.11, p.107-113

2023

Link zum Volltext

Verfügbarkeit prüfen

Ge GAA FETs and TMD FinFETs for the Applications Beyond Si-A Review

IEEE journal of the Electron Devices Society, 2016-09, Vol.4 (5), p.286-293

2016

Link zum Volltext

Verfügbarkeit prüfen

Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

ACS nano, 2017-11, Vol.11 (11), p.11015-11023

2017

Link zum Volltext

Verfügbarkeit prüfen

Dopant segregated Schottky barrier nanowire transistors using low-temperature microwave annealed ytterbium silicide

Japanese Journal of Applied Physics, 2014-11, Vol.53 (11), p.116501-1-116501-6

2014

Link zum Volltext

Verfügbarkeit prüfen

Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages

IEEE electron device letters, 2011-11, Vol.32 (11), p.1477-1479

2011

Link zum Volltext
IEEE_Xplore

Drain-induced Schottky barrier source-side hot carriers and its application to program local bits of nanowire charge-trapping memories

Japanese Journal of Applied Physics, 2014-09, Vol.53 (9), p.94001-1-094001-5

2014

Link zum Volltext

Verfügbarkeit prüfen

First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2101-2107

2022

Link zum Volltext
IEEE_Xplore

Effects of ammonia plasma treatment on the surface characteristics of carbon fibers

Surface & coatings technology, 2006-02, Vol.200 (10), p.3166-3169

2006

Link zum Volltext

Verfügbarkeit prüfen

A Localized Two-Bit/Cell Nanowire SONOS Memory Using Schottky Barrier Source-Side Injected Programming

IEEE transactions on nanotechnology, 2013-09, Vol.12 (5), p.760-765

2013

Link zum Volltext
IEEE_Xplore

Evaluation of the nanoindentation behaviors of SiGe epitaxial layer on Si substrate

Microelectronics and reliability, 2010, Vol.50 (1), p.63-69

2010

Link zum Volltext

Verfügbarkeit prüfen

Impact of Edge Encroachment on Programming and Erasing Gate Current in nand -Type Flash Memory

IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.1257-1263

2011

Link zum Volltext
IEEE_Xplore

The roles of hydrophobic group on the surface of ultra low dielectric constant porous silica film during thermal treatment

Thin solid films, 2007-06, Vol.515 (18), p.7275-7280

2007

Link zum Volltext

Verfügbarkeit prüfen

Effect of repetition nanoindentation of GaN epilayers on a-axis sapphire substrates

Surface and interface analysis, 2011-05, Vol.43 (5), p.918-922

2011

Link zum Volltext

Verfügbarkeit prüfen

Boosted photocatalytic efficiency through plasmonic field confinement with bowtie and diabolo nanostructures under LED irradiation

Optics express, 2016-08, Vol.24 (16), p.17541

2016

Link zum Volltext

Verfügbarkeit prüfen

Electrical Characteristics and Thermal Stability of [Formula Omitted] Metal Gate Electrode for Advanced MOS Devices

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3259

2008

Link zum Volltext

Verfügbarkeit prüfen

Observation of Growth of Human Fibroblasts on Silver Nanoparticles

Journal of physics. Conference series, 2007-03, Vol.61 (1), p.445-449

2007

Link zum Volltext

Verfügbarkeit prüfen

The effects of hydrogen plasma pretreatment on the formation of vertically aligned carbon nanotubes

Applied surface science, 2007-09, Vol.253 (23), p.9248-9253

2007

Link zum Volltext

Verfügbarkeit prüfen

Two dimensional hole gas (2DHG) germanium junctionless P-FinFETs without impurity scattering achieved by modulation doping in channel

Semiconductor science and technology, 2017-08, Vol.32 (8), p.84006

2017

Link zum Volltext

Verfügbarkeit prüfen

Electrical characteristics of Ge buried channel FinFETs with interfacial layers treated by F/N/H-based plasma

Microelectronic engineering, 2017-06, Vol.178, p.5-9

2017

Link zum Volltext

Verfügbarkeit prüfen

The First Ge Nanosheets GAAFET CMOS Inverters Fabricated by 2D Ge/Si Multilayer Epitaxy, Ge/Si Selective Etching

2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2021, p.1-2

2021

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 226

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(181)
Mit Volltextzugriff
(204)

Publikationsform

Sprache

Englisch
(199)
Chinesisch
(28)
Japanisch
(25)

Erscheinungsjahr

n.n

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(4)

Menü

Weitere Dienste

Einstellungen

Stacked Ge-Nanosheet GAAFETs Fabricated by Ge/Si Multilayer Epitaxy

Effects of the Molecular Chain Length of Polyimide on the Characteristics of Organic Resistive Random Access Memories

A Harmonic Radar Tag with High Detection Range Utilizing Ge FinFETs CMOS Technology

Advancements in single-crystal silicon with elevated-laser-liquid-phase-epitaxy (ELLPE) for monolithic 3D ICs

Multilevel Schottky Barrier Nanowire SONOS Memory With Ambipolar n- and p-Channel Cells

3-D Monolithic Stacking of Complementary-FET on CMOS for Next Generation Compute-In-Memory SRAM

Ge GAA FETs and TMD FinFETs for the Applications Beyond Si-A Review

Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

Dopant segregated Schottky barrier nanowire transistors using low-temperature microwave annealed ytterbium silicide

Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages

Drain-induced Schottky barrier source-side hot carriers and its application to program local bits of nanowire charge-trapping memories

First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

Effects of ammonia plasma treatment on the surface characteristics of carbon fibers

A Localized Two-Bit/Cell Nanowire SONOS Memory Using Schottky Barrier Source-Side Injected Programming

Evaluation of the nanoindentation behaviors of SiGe epitaxial layer on Si substrate

Impact of Edge Encroachment on Programming and Erasing Gate Current in nand -Type Flash Memory

The roles of hydrophobic group on the surface of ultra low dielectric constant porous silica film during thermal treatment

Effect of repetition nanoindentation of GaN epilayers on a-axis sapphire substrates

Boosted photocatalytic efficiency through plasmonic field confinement with bowtie and diabolo nanostructures under LED irradiation

Electrical Characteristics and Thermal Stability of [Formula Omitted] Metal Gate Electrode for Advanced MOS Devices

Observation of Growth of Human Fibroblasts on Silver Nanoparticles

The effects of hydrogen plasma pretreatment on the formation of vertically aligned carbon nanotubes

Two dimensional hole gas (2DHG) germanium junctionless P-FinFETs without impurity scattering achieved by modulation doping in channel

Electrical characteristics of Ge buried channel FinFETs with interfacial layers treated by F/N/H-based plasma

The First Ge Nanosheets GAAFET CMOS Inverters Fabricated by 2D Ge/Si Multilayer Epitaxy, Ge/Si Selective Etching

Suchergebnisse filtern