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400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

IEEE journal of selected topics in quantum electronics, 2002-07, Vol.8 (4), p.744-748

2002

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Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

IEEE journal of quantum electronics, 2002-05, Vol.38 (5), p.446-450

2002

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Nitride-based LEDs fabricated on patterned sapphire substrates

Solid-state electronics, 2003-09, Vol.47 (9), p.1539-1542

2003

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GaN-Based MSM Photodetectors Prepared on Patterned Sapphire Substrates

IEEE photonics technology letters, 2008-11, Vol.20 (22), p.1866-1868

2008

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Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs

Journal of crystal growth, 2004-02, Vol.261 (4), p.466-470

2004

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Correlation of growth of pentacene films at various gas ambience conditions to organic field-effect transistor characteristics

Organic electronics, 2006-12, Vol.7 (6), p.445-451

2006

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The thickness effect of p-AlGaN blocking Layer in UV-a bandpass photodetectors

IEEE photonics technology letters, 2005-10, Vol.17 (10), p.2161-2163

2005

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Nonlinear light absorption in meso-substituted tetrabenzoporphyrin and tetraarylporphyrin solutions

Chemical physics, 2000-12, Vol.262 (2), p.467-473

2000

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Enhanced electrocatalytic performance for methanol oxidation of a novel Pt-dispersed poly(3,4-ethylenedioxythiophene)–poly(styrene sulfonic acid) electrode

Journal of power sources, 2006-09, Vol.160 (1), p.65-72

2006

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Nitride-based green light-emitting diodes with high temperature GaN barrier layers

IEEE transactions on electron devices, 2003-08, Vol.50 (8), p.1766-1770

2003

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Influence of azasubstitution on the nonlinear absorption in porphyrazine derivatives

Chemical physics letters, 1999-09, Vol.311 (3), p.173-178

1999

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Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching

Solid-state electronics, 2002-04, Vol.46 (4), p.555-558

2002

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Optical nonlinearity and photoluminescence in CuI doped glass

Optical materials, 2006-04, Vol.28 (5), p.569-573

2006

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Protection by Prosaposin Against Ischemia-Induced Learning Disability and Neuronal Loss

Biochemical and biophysical research communications, 1994-10, Vol.204 (2), p.994-1000

1994

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Nonlinear absorption and refraction in porphyrazine derivatives

Chemical physics, 1999, Vol.240 (1), p.191-196

1999

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Gender differences in long-term beneficial effects of erythropoietin given after neonatal stroke in postnatal day-7 rats

Neuroscience, 2006, Vol.139 (3), p.803-811

2006

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In situ UV–visible spectroelectrochemical evidences for conducting copolymer formation between diphenylamine and m -methoxyaniline

Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy, 2003-07, Vol.59 (9), p.1937-1950

2003

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Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer

IEEE electron device letters, 2001-10, Vol.22 (10), p.460

2001

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Study of ionic conductivity and microstructure of a cross-linked polyurethane acrylate electrolyte

Polymer (Guilford), 2002-02, Vol.43 (3), p.681-691

2002

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Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures

IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1743-1746

2004

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In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer

Solid-state electronics, 2003-11, Vol.47 (11), p.2027-2030

2003

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Nitride-Based LEDs With Modulation-Doped Al $_0.12hbox Ga_0.88 hbox N$ –GaN Superlattice Structures

IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1743-1746

2004

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Nitride-based LEDs with modulation-doped Al/sub 0.12/Ga/sub 0.88/N-GaN superlattice structures

IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1743-1746

2004

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Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates

Journal of crystal growth, 2008-11, Vol.310 (23), p.4976-4978

2008

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Growth and investigation of m-plane (In)GaN buffer layers on LiAlO 2 substrates

Journal of crystal growth, 2008, Vol.310 (23), p.4976-4978

2008

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400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

Nitride-based LEDs fabricated on patterned sapphire substrates

GaN-Based MSM Photodetectors Prepared on Patterned Sapphire Substrates

Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs

Correlation of growth of pentacene films at various gas ambience conditions to organic field-effect transistor characteristics

The thickness effect of p-AlGaN blocking Layer in UV-a bandpass photodetectors

Nonlinear light absorption in meso-substituted tetrabenzoporphyrin and tetraarylporphyrin solutions

Enhanced electrocatalytic performance for methanol oxidation of a novel Pt-dispersed poly(3,4-ethylenedioxythiophene)–poly(styrene sulfonic acid) electrode

Nitride-based green light-emitting diodes with high temperature GaN barrier layers

Influence of azasubstitution on the nonlinear absorption in porphyrazine derivatives

Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching

Optical nonlinearity and photoluminescence in CuI doped glass

Protection by Prosaposin Against Ischemia-Induced Learning Disability and Neuronal Loss

Nonlinear absorption and refraction in porphyrazine derivatives

Gender differences in long-term beneficial effects of erythropoietin given after neonatal stroke in postnatal day-7 rats

In situ UV–visible spectroelectrochemical evidences for conducting copolymer formation between diphenylamine and m -methoxyaniline

Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer

Study of ionic conductivity and microstructure of a cross-linked polyurethane acrylate electrolyte

Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures

In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer

Nitride-Based LEDs With Modulation-Doped Al $_0.12hbox Ga_0.88 hbox N$ –GaN Superlattice Structures

Nitride-based LEDs with modulation-doped Al/sub 0.12/Ga/sub 0.88/N-GaN superlattice structures

Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates

Growth and investigation of m-plane (In)GaN buffer layers on LiAlO 2 substrates

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