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Modulating the Electronic Structures of Dual‐Atom Catalysts via Coordination Environment Engineering for Boosting CO2 Electroreduction

Angewandte Chemie International Edition, 2022-12, Vol.61 (51), p.e202215187-n/a

International ed. in English, 2022

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A Fully Integrated Digital LDO With Built-In Adaptive Sampling and Active Voltage Positioning Using a Beat-Frequency Quantizer

IEEE journal of solid-state circuits, 2019-01, Vol.54 (1), p.109-120

2019

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Estimation of the Trap Energy Characteristics of Row Hammer-Affected Cells in Gamma-Irradiated DDR4 DRAM

IEEE transactions on nuclear science, 2022-03, Vol.69 (3), p.558-566

2022

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Boosting CO2 Photoreduction to Formate or CO with High Selectivity over a Covalent Organic Framework Covalently Anchored on Graphene Oxide

Angewandte Chemie International Edition, 2024-03, Vol.63 (10), p.e202318735-n/a

International ed. in English, 2024

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Electronic Modulation in Homonuclear Dual‐Atomic Catalysts for Enhanced CO2 Electroreduction

Chemistry : a European journal, 2024-02, Vol.30 (7), p.e202303345-n/a

2024

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Single Event Transient and TID Study in 28 nm UTBB FDSOI Technology

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.113-118

2017

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Bottom-up construction of mesoporous supramolecular isomers based on a Pd3L6 triangular prism as templates for shape specific aggregation of polyiodide

Nano research, 2022-03, Vol.15 (3), p.2655-2660

2022

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Synthesis, structure and optical properties of high-quality VO2 thin films grown on silicon, quartz and sapphire substrates by high temperature magnetron sputtering: Properties through the transition temperature

Journal of alloys and compounds, 2020-12, Vol.848, p.156323, Article 156323

2020

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Supramolecular Coordination Cages Based on N‐Heterocyclic Carbene‐Gold(I) Ligands and Their Precursors: Self‐Assembly, Structural Transformation and Guest‐Binding Properties

Chemistry : a European journal, 2021-05, Vol.27 (29), p.7853-7861

2021

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Temperature Dependence of Critical Charge and Collected Charge in 5-nm FinFET SRAM

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.1-1

2024

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Single-Event Upset Cross Section at High Frequencies for RHBD Flip-Flop Designs at the 5-nm Bulk FinFET Node

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.839-844

2024

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Efficacy of Transistor Stacking on Flip-Flop SEU Performance at 22-nm FDSOI Node

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.596-602

2023

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SEU Performance of RHBD Flip-Flops Using Guard-Gates at 22-nm FDSOI Technology Node

IEEE transactions on nuclear science, 2023-08, Vol.70 (8), p.1-1

2023

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Impact of CnRx Structure on Soft Error Rates of Flip-Flop Designs at 22-nm FD SOI Node

IEEE transactions on nuclear science, 2023-08, Vol.70 (8), p.1-1

2023

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Temperature Estimation of HBM2 Channels with Tail Distribution of Retention Errors in FPGA-HBM2 Platform

Electronics (Basel), 2023-01, Vol.12 (1), p.32

2023

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SE Response of Guard-Gate FF in 16- and 7-nm Bulk FinFET Technologies

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1436-1442

2020

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Effect of Substrate Temperature on the Structural, Optical and Electrical Properties of DC Magnetron Sputtered VO2 Thin Films

Materials, 2022-11, Vol.15 (21), p.7849

2022

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Topology of conductive clusters in sputtered high-quality VO2 thin films on the brink of percolation threshold during insulator-to-metal and metal-to-insulator transitions

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-12, Vol.38 (6)

2020

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Ultrathin metal−organic layers/carbon nitride nanosheet composites as 2D/2D heterojunctions for efficient CO2 photoreduction

Journal of materials chemistry. A, Materials for energy and sustainability, 2023-01, Vol.11 (5), p.2225-2232

2023

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Size‐Dependent Insulator‐to‐Metal and Metal‐to‐Insulator Phase Transitions in VO2 Microrods Grown on a Silicon Substrate

Physica status solidi. A, Applications and materials science, 2021-07, Vol.218 (14), p.n/a

2021

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Designing dual-atom cobalt catalysts anchored on amino-functionalized MOFs for efficient CO2 photoreduction

Green chemistry : an international journal and green chemistry resource : GC, 2023-08, Vol.25 (16), p.6207-6211

2023

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Effects of Threshold Voltage Variations on Single-Event Upset Response of Sequential Circuits at Advanced Technology Nodes

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.457-463

2017

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Single-Event Upsets in a 7-nm Bulk FinFET Technology With Analysis of Threshold Voltage Dependence

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.823-829

2021

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Exploitations of Multiple Rows Hammering and Retention Time Interactions in DRAM Using X-Ray Radiation

IEEE access, 2021, Vol.9, p.137514-137523

2021

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The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior

Materials, 2019-07, Vol.12 (13), p.2160

2019

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Modulating the Electronic Structures of Dual‐Atom Catalysts via Coordination Environment Engineering for Boosting CO2 Electroreduction

A Fully Integrated Digital LDO With Built-In Adaptive Sampling and Active Voltage Positioning Using a Beat-Frequency Quantizer

Estimation of the Trap Energy Characteristics of Row Hammer-Affected Cells in Gamma-Irradiated DDR4 DRAM

Boosting CO2 Photoreduction to Formate or CO with High Selectivity over a Covalent Organic Framework Covalently Anchored on Graphene Oxide

Electronic Modulation in Homonuclear Dual‐Atomic Catalysts for Enhanced CO2 Electroreduction

Single Event Transient and TID Study in 28 nm UTBB FDSOI Technology

Bottom-up construction of mesoporous supramolecular isomers based on a Pd3L6 triangular prism as templates for shape specific aggregation of polyiodide

Synthesis, structure and optical properties of high-quality VO2 thin films grown on silicon, quartz and sapphire substrates by high temperature magnetron sputtering: Properties through the transition temperature

Supramolecular Coordination Cages Based on N‐Heterocyclic Carbene‐Gold(I) Ligands and Their Precursors: Self‐Assembly, Structural Transformation and Guest‐Binding Properties

Temperature Dependence of Critical Charge and Collected Charge in 5-nm FinFET SRAM

Single-Event Upset Cross Section at High Frequencies for RHBD Flip-Flop Designs at the 5-nm Bulk FinFET Node

Efficacy of Transistor Stacking on Flip-Flop SEU Performance at 22-nm FDSOI Node

SEU Performance of RHBD Flip-Flops Using Guard-Gates at 22-nm FDSOI Technology Node

Impact of CnRx Structure on Soft Error Rates of Flip-Flop Designs at 22-nm FD SOI Node

Temperature Estimation of HBM2 Channels with Tail Distribution of Retention Errors in FPGA-HBM2 Platform

SE Response of Guard-Gate FF in 16- and 7-nm Bulk FinFET Technologies

Effect of Substrate Temperature on the Structural, Optical and Electrical Properties of DC Magnetron Sputtered VO2 Thin Films

Topology of conductive clusters in sputtered high-quality VO2 thin films on the brink of percolation threshold during insulator-to-metal and metal-to-insulator transitions

Ultrathin metal−organic layers/carbon nitride nanosheet composites as 2D/2D heterojunctions for efficient CO2 photoreduction

Size‐Dependent Insulator‐to‐Metal and Metal‐to‐Insulator Phase Transitions in VO2 Microrods Grown on a Silicon Substrate

Designing dual-atom cobalt catalysts anchored on amino-functionalized MOFs for efficient CO2 photoreduction

Effects of Threshold Voltage Variations on Single-Event Upset Response of Sequential Circuits at Advanced Technology Nodes

Single-Event Upsets in a 7-nm Bulk FinFET Technology With Analysis of Threshold Voltage Dependence

Exploitations of Multiple Rows Hammering and Retention Time Interactions in DRAM Using X-Ray Radiation

The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior

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