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Comparison of Combinational and Sequential Error Rates for a Deep Submicron Process

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2719-2725

2011

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A Quatro-Based 65-nm Flip-Flop Circuit for Soft-Error Resilience

IEEE transactions on nuclear science, 2017-06, Vol.64 (6), p.1554-1561

2017

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Disentangling Cooper-pair formation above the transition temperature from the pseudogap state in the cuprates

Nature physics, 2011-01, Vol.7 (1), p.21-25

2011

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Single-Event Performance and Layout Optimization of Flip-Flops in a 28-nm Bulk Technology

IEEE transactions on nuclear science, 2013-08, Vol.60 (4), p.2782-2788

2013

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Single-Event Latchup in a 7-nm Bulk FinFET Technology

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.830-834

2021

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Formation of gapless Fermi arcs and fingerprints of order in the pseudogap state of cuprate superconductors

Physical review letters, 2013-10, Vol.111 (15), p.157003-157003, Article 157003

2013

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An Area Efficient Stacked Latch Design Tolerant to SEU in 28 nm FDSOI Technology

IEEE transactions on nuclear science, 2016-12, Vol.63 (6), p.3003-3009

2016

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Neutron- and Proton-Induced Single Event Upsets for D- and DICE-Flip/Flop Designs at a 40 nm Technology Node

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.1008-1014

2011

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A unified form of low-energy nodal electronic interactions in hole-doped cuprate superconductors

Nature communications, 2019-12, Vol.10 (1), p.5737-8, Article 5737

2019

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The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2440-2451

2015

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Evaluation of SEU Performance of 28-nm FDSOI Flip-Flop Designs

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.367-373

2017

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An SEU-Tolerant DICE Latch Design With Feedback Transistors

IEEE transactions on nuclear science, 2015-04, Vol.62 (2), p.548-554

2015

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Single-Event Tolerant Flip-Flop Design in 40-nm Bulk CMOS Technology

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.3033-3037

2011

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Impact of Supply Voltage and Frequency on the Soft Error Rate of Logic Circuits

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4200-4206

2013

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Frequency Dependence of Alpha-Particle Induced Soft Error Rates of Flip-Flops in 40-nm CMOS Technology

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2796-2802

2012

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Single-Event Transient Sensitivity Evaluation of Clock Networks at 28-nm CMOS Technology

IEEE transactions on nuclear science, 2016-02, Vol.63 (1), p.385-391

2016

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PB2080: EFFICACY AND SAFETY OF BENDAMUSTINE‐BASED REGIMENS AS FIRST‐LINE TREATMENT FOR INDOLENT B‐CELL NON‐HODGKIN LYMPHOMA: A PROSPECTIVE, MULTICENTER, REAL‐WORLD STUDY IN CHINA

HemaSphere, 2022-06, Vol.6 (Suppl), p.1951-1952

2022

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Technology Scaling Comparison of Flip-Flop Heavy-Ion Single-Event Upset Cross Sections

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4368-4373

2013

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Total-Ionizing Dose Damage from X-Ray PCB Inspection Systems

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-7

2024

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Influence of Voltage and Particle LET on Timing Vulnerability Factors of Circuits

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2592-2598

2015

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Effects of Temperature and Supply Voltage on Soft Errors for 7-nm Bulk FinFET Technology

2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-5

2021

Volltextzugriff (PDF)

Role of leptin receptor gene polymorphisms in susceptibility to the development of essential hypertension: a case-control association study in a Northern Han Chinese population

Journal of human hypertension, 2014-09, Vol.28 (9), p.551-556

2014

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Effectiveness of SEL Hardening Strategies and the Latchup Domino Effect

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2642-2650

2012

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SEE evaluation of ARM M0 cores in a 28 nm FDSOI technology

Microelectronics and reliability, 2021-08, Vol.123, p.114214, Article 114214

2021

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High-Current State triggered by Operating-Frequency Change

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-4

2020

Volltextzugriff (PDF)

1 – 25 von 61.416

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Comparison of Combinational and Sequential Error Rates for a Deep Submicron Process

A Quatro-Based 65-nm Flip-Flop Circuit for Soft-Error Resilience

Disentangling Cooper-pair formation above the transition temperature from the pseudogap state in the cuprates

Single-Event Performance and Layout Optimization of Flip-Flops in a 28-nm Bulk Technology

Single-Event Latchup in a 7-nm Bulk FinFET Technology

Formation of gapless Fermi arcs and fingerprints of order in the pseudogap state of cuprate superconductors

An Area Efficient Stacked Latch Design Tolerant to SEU in 28 nm FDSOI Technology

Neutron- and Proton-Induced Single Event Upsets for D- and DICE-Flip/Flop Designs at a 40 nm Technology Node

A unified form of low-energy nodal electronic interactions in hole-doped cuprate superconductors

The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate

Evaluation of SEU Performance of 28-nm FDSOI Flip-Flop Designs

An SEU-Tolerant DICE Latch Design With Feedback Transistors

Single-Event Tolerant Flip-Flop Design in 40-nm Bulk CMOS Technology

Impact of Supply Voltage and Frequency on the Soft Error Rate of Logic Circuits

Frequency Dependence of Alpha-Particle Induced Soft Error Rates of Flip-Flops in 40-nm CMOS Technology

Single-Event Transient Sensitivity Evaluation of Clock Networks at 28-nm CMOS Technology

PB2080: EFFICACY AND SAFETY OF BENDAMUSTINE‐BASED REGIMENS AS FIRST‐LINE TREATMENT FOR INDOLENT B‐CELL NON‐HODGKIN LYMPHOMA: A PROSPECTIVE, MULTICENTER, REAL‐WORLD STUDY IN CHINA

Technology Scaling Comparison of Flip-Flop Heavy-Ion Single-Event Upset Cross Sections

Total-Ionizing Dose Damage from X-Ray PCB Inspection Systems

Influence of Voltage and Particle LET on Timing Vulnerability Factors of Circuits

Effects of Temperature and Supply Voltage on Soft Errors for 7-nm Bulk FinFET Technology

Role of leptin receptor gene polymorphisms in susceptibility to the development of essential hypertension: a case-control association study in a Northern Han Chinese population

Effectiveness of SEL Hardening Strategies and the Latchup Domino Effect

SEE evaluation of ARM M0 cores in a 28 nm FDSOI technology

High-Current State triggered by Operating-Frequency Change

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