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Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance

Applied physics letters, 2024-07, Vol.125 (3)

2024

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Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters

Applied physics letters, 2024-06, Vol.124 (24)

2024

Volltextzugriff (PDF)

Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance

Applied physics letters, 2023-09, Vol.123 (10)

2023

Volltextzugriff (PDF)

Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity

Applied physics letters, 2023-08, Vol.123 (9)

2023

Volltextzugriff (PDF)

Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench

Applied physics letters, 2024-03, Vol.124 (13)

2024

Volltextzugriff (PDF)

The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure

Crystals (Basel), 2022-05, Vol.12 (5), p.722

2022

Volltextzugriff (PDF)

Charge Trapping Layer Enabled Normally-Off β-Ga2O3 MOSFET

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.3191-3195

2023

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Charge Trapping Layer Enabled Normally-Off β -Ga 2 O 3 MOSFET

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.3191-3195

2023

Volltextzugriff (PDF)

Interface charge engineering on an in situ SiN x /AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance

Applied physics letters, 2023-09, Vol.123 (10)

2023

Volltextzugriff (PDF)

Carbon monoxide detection down to ppb-level realized by O2 plasma treated TiO2-gated AlGaN/GaN HEMT sensor

Sensors and actuators. B, Chemical, 2022-05, Vol.359, p.131556, Article 131556

2022

Volltextzugriff (PDF)

A robust Ni/Au process and mechanism for p-type ohmic contact applied to GaN p-FETs

Journal of alloys and compounds, 2024-03, Vol.978, p.173499, Article 173499

2024

Volltextzugriff (PDF)

Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation

Applied physics letters, 2023-06, Vol.122 (23)

2023

Volltextzugriff (PDF)

Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering

Materials science in semiconductor processing, 2023-02, Vol.154, p.107221, Article 107221

2023

Volltextzugriff (PDF)

High VTH and Breakdown Enhancement-Mode GaN HEMTs for Power ICs Application Using Charge Trapping Layer

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, p.378-381

2024

Volltextzugriff (PDF)

Investigation of Nitrogen-Based Plasma Passivation on GaN RF HEMTs Using Various Precursors

IEEE journal of the Electron Devices Society, 2024-06, p.1-1

2024

Volltextzugriff (PDF)

Specificity protein 1-mediated ACSL4 transcription promoted the osteoarthritis progression through suppressing the ferroptosis of chondrocytes

Journal of orthopaedic surgery and research, 2023-03, Vol.18 (1), p.188-188, Article 188

2023

Volltextzugriff (PDF)

Human activities significantly impact China’s net primary production variation from 2001 to 2020

Progress in physical geography, 2024-04, Vol.48 (2), p.251-274

2024

Volltextzugriff (PDF)

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Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance

Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters

Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance

Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity

Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench

The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure

Charge Trapping Layer Enabled Normally-Off β-Ga2O3 MOSFET

Charge Trapping Layer Enabled Normally-Off β -Ga 2 O 3 MOSFET

Interface charge engineering on an in situ SiN x /AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance

Carbon monoxide detection down to ppb-level realized by O2 plasma treated TiO2-gated AlGaN/GaN HEMT sensor

A robust Ni/Au process and mechanism for p-type ohmic contact applied to GaN p-FETs

Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation

Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering

High VTH and Breakdown Enhancement-Mode GaN HEMTs for Power ICs Application Using Charge Trapping Layer

Investigation of Nitrogen-Based Plasma Passivation on GaN RF HEMTs Using Various Precursors

Specificity protein 1-mediated ACSL4 transcription promoted the osteoarthritis progression through suppressing the ferroptosis of chondrocytes

Human activities significantly impact China’s net primary production variation from 2001 to 2020

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