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Full-function logic circuit based on egg albumen resistive memory

Applied physics letters, 2022-12, Vol.121 (24)

2022

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Fabrication and Characteristics of a Three-Axis Accelerometer with Double L-Shaped Beams

Sensors (Basel, Switzerland), 2020-03, Vol.20 (6), p.1780

2020

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Characteristics Research of a High Sensitivity Piezoelectric MOSFET Acceleration Sensor

Sensors (Basel, Switzerland), 2020-09, Vol.20 (17), p.4988

2020

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Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer

Scientific reports, 2017-06, Vol.7 (1), p.3938-11, Article 3938

2017

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Artificial Tactile Sensing Neuron with Tactile Sensing Ability Based on a Chitosan Memristor

Advanced science, 2024-05, Vol.11 (19), p.e2308610-n/a

2024

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Characteristics of a Magnetic Field Sensor with a Concentrating-Conducting Magnetic Flux Structure

Sensors (Basel, Switzerland), 2019-10, Vol.19 (20), p.4498

2019

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First‐Principles Study of the Electronic Properties of Egg Albumen Optoelectronic Artificial Synapses by Carbon Nanotube Insertion

Advanced electronic materials, 2024-06, Vol.10 (6), p.n/a

2024

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Silkworm Hemolymph Resistance Random Access Memory with High Stability and Low Power Consumption

Advanced electronic materials, 2023-04, Vol.9 (4), p.n/a

2023

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Bistable electrical switching and nonvolatile memory effect in mixed composite of oxadiazole acceptor and carbazole donor

Organic electronics, 2015-10, Vol.25, p.283-288

2015

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Resistive Switching Memory Devices Based on Body Fluid of Bombyx mori L

Micromachines (Basel), 2019-08, Vol.10 (8), p.540

2019

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Fabrication and Characterization of Monolithic Integrated Three-Axis Acceleration/Pressure/Magnetic Field Sensors

Micromachines (Basel), 2024-03, Vol.15 (3), p.412

2024

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High-Performance Biomemristor Embedded with Graphene Quantum Dots

Nanomaterials (Basel, Switzerland), 2023-11, Vol.13 (23), p.3021

2023

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Dual-Tunable Memristor Based on Carbon Nanotubes and Graphene Quantum Dots

Nanomaterials (Basel, Switzerland), 2021-08, Vol.11 (8), p.2043

2021

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Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots

Nanomaterials (Basel, Switzerland), 2022-11, Vol.12 (22), p.3976

2022

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Flexible Transient Resistive Memory Based on Biodegradable Composites

Nanomaterials (Basel, Switzerland), 2022-10, Vol.12 (19), p.3531

2022

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Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes

Nanomaterials (Basel, Switzerland), 2021-08, Vol.11 (8), p.2085

2021

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Fabrication Technology and Characteristics of a Magnetic Sensitive Transistor with nc-Si:H/c-Si Heterojunction

Sensors (Basel, Switzerland), 2017-01, Vol.17 (1), p.212-212

2017

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Physically Transient, Flexible, and Resistive Random Access Memory Based on Silver Ions and Egg Albumen Composites

Nanomaterials (Basel, Switzerland), 2022-09, Vol.12 (17), p.3061

2022

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The influence of thickness on memory characteristic based on nonvolatile tuning behavior in poly(N-vinylcarbazole) films

Thin solid films, 2016-01, Vol.598, p.293-298

2016

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Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors

Sensors (Basel, Switzerland), 2018-08, Vol.18 (8), p.2551

2018

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Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions

Nanomaterials (Basel, Switzerland), 2021-07, Vol.11 (8), p.1973

2021

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Research of the Monolithic Integrated 3-D Magnetic Field Sensor Based on MEMS Technology

IEEE sensors journal, 2017-09, Vol.17 (18), p.5849-5856

2017

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IEEE_Xplore

Fabrication and Characteristics of a SOI Three-Axis Acceleration Sensor Based on MEMS Technology

Micromachines (Basel), 2019-04, Vol.10 (4), p.238

2019

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Design, fabrication and characterization of a high-sensitivity pressure sensor based on nano-polysilicon thin film transistors

AIP advances, 2015-12, Vol.5 (12), p.127216-127216-8

2015

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Memristic Characteristics from Bistable to Tristable Memory with Controllable Charge Trap Carbon Nanotubes

Nanomaterials (Basel, Switzerland), 2018-02, Vol.8 (2), p.114

2018

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Full-function logic circuit based on egg albumen resistive memory

Fabrication and Characteristics of a Three-Axis Accelerometer with Double L-Shaped Beams

Characteristics Research of a High Sensitivity Piezoelectric MOSFET Acceleration Sensor

Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer

Artificial Tactile Sensing Neuron with Tactile Sensing Ability Based on a Chitosan Memristor

Characteristics of a Magnetic Field Sensor with a Concentrating-Conducting Magnetic Flux Structure

First‐Principles Study of the Electronic Properties of Egg Albumen Optoelectronic Artificial Synapses by Carbon Nanotube Insertion

Silkworm Hemolymph Resistance Random Access Memory with High Stability and Low Power Consumption

Bistable electrical switching and nonvolatile memory effect in mixed composite of oxadiazole acceptor and carbazole donor

Resistive Switching Memory Devices Based on Body Fluid of Bombyx mori L

Fabrication and Characterization of Monolithic Integrated Three-Axis Acceleration/Pressure/Magnetic Field Sensors

High-Performance Biomemristor Embedded with Graphene Quantum Dots

Dual-Tunable Memristor Based on Carbon Nanotubes and Graphene Quantum Dots

Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots

Flexible Transient Resistive Memory Based on Biodegradable Composites

Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes

Fabrication Technology and Characteristics of a Magnetic Sensitive Transistor with nc-Si:H/c-Si Heterojunction

Physically Transient, Flexible, and Resistive Random Access Memory Based on Silver Ions and Egg Albumen Composites

The influence of thickness on memory characteristic based on nonvolatile tuning behavior in poly(N-vinylcarbazole) films

Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors

Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions

Research of the Monolithic Integrated 3-D Magnetic Field Sensor Based on MEMS Technology

Fabrication and Characteristics of a SOI Three-Axis Acceleration Sensor Based on MEMS Technology

Design, fabrication and characterization of a high-sensitivity pressure sensor based on nano-polysilicon thin film transistors

Memristic Characteristics from Bistable to Tristable Memory with Controllable Charge Trap Carbon Nanotubes

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