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Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications

1, 2022

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In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaN

Journal of crystal growth, 2018-09, Vol.498, p.214-223

2018

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Light extraction from OLEDs for lighting applications through light scattering

Organic electronics, 2007-08, Vol.8 (4), p.293-299

2007

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Tuning the Properties of CZTS Films by Controlling the Process Parameters in Cost-Effective Non-vacuum Technique

Journal of electronic materials, 2018-12, Vol.47 (12), p.7085-7092

2018

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Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC

Applied physics. B, Lasers and optics, 2019-09, Vol.125 (9), p.1-5, Article 172

2019

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Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC

Journal of crystal growth, 2006-04, Vol.289 (2), p.520-526

2006

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Growing bulk‐like 3C‐SiC from seeding material produced by CVD

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-n/a

2017

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Solar Driven Energy Conversion Applications Based on 3C-SiC

Materials Science Forum, 2016, Vol.858, p.1028-1031

2016

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Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers

Journal of crystal growth, 2017-11, Vol.478, p.159-162

2017

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On the lattice parameters of silicon carbide

Journal of applied physics, 2009-02, Vol.105 (3), p.033511-033511-4

2009

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Effects of source material on epitaxial growth of fluorescent SiC

Thin solid films, 2012-11, Vol.522, p.7-10

2012

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Dependence of the seed layer quality on different temperature ramp-up conditions for 3C-SiC hetero-epitaxy on Si (100)

Thin solid films, 2012-11, Vol.522, p.2-6

2012

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Status of SiC bulk growth processes

Journal of physics. D, Applied physics, 2007-10, Vol.40 (20), p.6150-6158

2007

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Scanning electron microscopical examination of the impact of laser patterning on microscopic inhomogeneities of Cu(In,Ga)(Se,S)2 absorbers produced by rapid thermal processing

Thin solid films, 2013-05, Vol.535, p.97-101

2013

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Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates

Materials Science Forum, 2016-05, Vol.858, p.89-92, Article 89

2016

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Numerical modeling and experimental verification of modified-PVT crystal growth of SiC

Journal of crystal growth, 2007-05, Vol.303 (1), p.337-341

2007

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Vapor growth of SiC bulk crystals and its challenge of doping

Surface & coatings technology, 2006-12, Vol.201 (7), p.4026-4031

2006

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High Temperature Solution Growth of SiC by the Vertical Bridgman Method Using a Metal Free Si-C-Melt at 2300 °C

Materials Science Forum, 2016-05, Vol.858, p.33-36

2016

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The influence of gallium on phase transitions during the crystallisation of thin film absorber materials Cu(In,Ga)(S,Se) 2 investigated by in-situ X-ray diffraction

Thin solid films, 2011-08, Vol.519 (21), p.7197-7200

2011

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Fluorescent SiC as a new material for white LEDs

Physica scripta, 2012-03, Vol.T148, p.14002

2012

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Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds

Materials letters, 2012, Vol.67 (1), p.300-302

2012

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The influence of microstructure on the magnetic properties of WC/Co hardmetals

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2006-05, Vol.423 (1), p.306-312

2006

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From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction

Materials science in semiconductor processing, 2018-05, Vol.78, p.57-68

2018

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Influence of the starting materials used in the crystal growth process of CZT for gamma ray radiation applications

Journal of crystal growth, 2013-10, Vol.381, p.15-21

2013

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Determination of doping levels and their distribution in SiC by optical techniques

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-09, Vol.102 (1), p.262-268

2003

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Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications

In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaN

Light extraction from OLEDs for lighting applications through light scattering

Tuning the Properties of CZTS Films by Controlling the Process Parameters in Cost-Effective Non-vacuum Technique

Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC

Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC

Growing bulk‐like 3C‐SiC from seeding material produced by CVD

Solar Driven Energy Conversion Applications Based on 3C-SiC

Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers

On the lattice parameters of silicon carbide

Effects of source material on epitaxial growth of fluorescent SiC

Dependence of the seed layer quality on different temperature ramp-up conditions for 3C-SiC hetero-epitaxy on Si (100)

Status of SiC bulk growth processes

Scanning electron microscopical examination of the impact of laser patterning on microscopic inhomogeneities of Cu(In,Ga)(Se,S)2 absorbers produced by rapid thermal processing

Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates

Numerical modeling and experimental verification of modified-PVT crystal growth of SiC

Vapor growth of SiC bulk crystals and its challenge of doping

High Temperature Solution Growth of SiC by the Vertical Bridgman Method Using a Metal Free Si-C-Melt at 2300 °C

The influence of gallium on phase transitions during the crystallisation of thin film absorber materials Cu(In,Ga)(S,Se) 2 investigated by in-situ X-ray diffraction

Fluorescent SiC as a new material for white LEDs

Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds

The influence of microstructure on the magnetic properties of WC/Co hardmetals

From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction

Influence of the starting materials used in the crystal growth process of CZT for gamma ray radiation applications

Determination of doping levels and their distribution in SiC by optical techniques

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