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Effects of aquaregia treatment of indium–tin–oxide substrates on the behavior of double layered organic light-emitting diodes

Applied physics letters, 1997-05, Vol.70 (20), p.2741-2743

1997

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Stochastic approach to the smart quantum confinement model in porous silicon

Surface science, 2002-09, Vol.515 (2), p.L509-L513

2002

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Size-dependent optical properties of silicon nanocrystals

Journal of luminescence, 1999-11, Vol.83, p.187-191

1999

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Raman study of the network disorder in sputtered and glow discharge a -Si:H films

Journal of applied physics, 1995-10, Vol.78 (8), p.5120-5125

1995

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The effect of light soaking on the structural order in a-Si:H

Journal of non-crystalline solids, 2000-05, Vol.266, p.496-500

2000

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The structure of surfaces II; springer series in surface science 11

Materials research bulletin, 1988-10, Vol.23 (10), p.1523

Weisz, S.Z.

1988

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Characterization of the silicon network disorder in hydrogenated amorphous silicon carbide alloys with low carbon concentrations

Journal of non-crystalline solids, 1996, Vol.194 (1), p.78-84

1996

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Diffusion Length Measurements of Minority Carriers in Si-SiO 2 Using the Photo-Grating Technique

MRS proceedings, 2000, Vol.638, Article F14.44.1

2000

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Diffusion Length Measurements of Minority Carriers in Si-SiO2 Using the Photo-Grating Technique

MRS proceedings, 2000, Vol.638

2000

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Comparative analysis of the 1.54 μm emission of Er-doped Si/SiO 2 films and the size distribution of the nanostructure

Materials science & engineering. B, Solid-state materials for advanced technology, 2000, Vol.72 (2), p.109-112

2000

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Comparative analysis of the 1.54 μm emission of Er-doped Si/SiO2 films and the size distribution of the nanostructure

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-03, Vol.72 (2-3), p.109-112

2000

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Relation between electroluminescence and photoluminescence in porous silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-03, Vol.72 (2), p.138-141

2000

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Observation of picosecond nonlinear optical response from porous silicon

Journal of luminescence, 1999-11, Vol.83, p.37-41

1999

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The light intensity exponent of the minority carrier lifetime and the mobility gap states in a-Si:H

Journal of non-crystalline solids, 1998-05, Vol.227-230, p.206-210

1998

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Light Intensity Exponents as Sensitive Tools for the Detection of Impurities in a-Si:H

MRS proceedings, 2000, Vol.609, Article A27.5

2000

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Two Carrier Sensitization as a Spectroscopic Tool for a-Si:H

MRS proceedings, 1999, Vol.557, Article 439

1999

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A new analysis method to characterize the S-band luminescence decay of porous Si

Journal of luminescence, 1999, Vol.81 (1), p.1-6

1999

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Line Shape in Resonance Raman Scattering from Silicon Quantum Dots

MRS proceedings, 1999, Vol.571, Article 235

1999

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Study of the Luminescence of Eu-Doped Nanocrystalline Si/SiO 2 Systems Prepared by RF Co-Sputtering

MRS proceedings, 1999, Vol.581, Article 647

1999

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Study of the Luminescence of Eu-Doped Nanocrystalline Si/SiO2 Systems Prepared by RF Co-Sputtering

MRS proceedings, 1999, Vol.581

1999

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Surface states on amorphous silicon

Surface science, 1995-09, Vol.338 (1), p.117-124

1995

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Studies of photoconductivity in iodine single crystals

The Journal of physics and chemistry of solids, 1961-01, Vol.22, p.285-292

1961

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Relation between luminescence and electronic surface characteristics in p-type porous silicon

Journal of luminescence, 1997-06, Vol.72, p.729-730

1997

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The relation between phototransport and photoluminescence in porous silicon

Journal of luminescence, 1997-06, Vol.72, p.314-315

1997

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The dependencies of the two carrier mobility-lifetime products on the position of the Fermi level in a-Si:H

Journal of non-crystalline solids, 1993-12, Vol.164, p.399-402

1993

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Effects of aquaregia treatment of indium–tin–oxide substrates on the behavior of double layered organic light-emitting diodes

Stochastic approach to the smart quantum confinement model in porous silicon

Size-dependent optical properties of silicon nanocrystals

Raman study of the network disorder in sputtered and glow discharge a -Si:H films

The effect of light soaking on the structural order in a-Si:H

The structure of surfaces II; springer series in surface science 11

Characterization of the silicon network disorder in hydrogenated amorphous silicon carbide alloys with low carbon concentrations

Diffusion Length Measurements of Minority Carriers in Si-SiO 2 Using the Photo-Grating Technique

Diffusion Length Measurements of Minority Carriers in Si-SiO2 Using the Photo-Grating Technique

Comparative analysis of the 1.54 μm emission of Er-doped Si/SiO 2 films and the size distribution of the nanostructure

Comparative analysis of the 1.54 μm emission of Er-doped Si/SiO2 films and the size distribution of the nanostructure

Relation between electroluminescence and photoluminescence in porous silicon

Observation of picosecond nonlinear optical response from porous silicon

The light intensity exponent of the minority carrier lifetime and the mobility gap states in a-Si:H

Light Intensity Exponents as Sensitive Tools for the Detection of Impurities in a-Si:H

Two Carrier Sensitization as a Spectroscopic Tool for a-Si:H

A new analysis method to characterize the S-band luminescence decay of porous Si

Line Shape in Resonance Raman Scattering from Silicon Quantum Dots

Study of the Luminescence of Eu-Doped Nanocrystalline Si/SiO 2 Systems Prepared by RF Co-Sputtering

Study of the Luminescence of Eu-Doped Nanocrystalline Si/SiO2 Systems Prepared by RF Co-Sputtering

Surface states on amorphous silicon

Studies of photoconductivity in iodine single crystals

Relation between luminescence and electronic surface characteristics in p-type porous silicon

The relation between phototransport and photoluminescence in porous silicon

The dependencies of the two carrier mobility-lifetime products on the position of the Fermi level in a-Si:H

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