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Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack

Scientific reports, 2015-06, Vol.5 (1), p.11369-11369, Article 11369

2015

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High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits

IEEE transactions on magnetics, 2009-10, Vol.45 (10), p.3784-3787

2009

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Skyrmion-electronics: writing, deleting, reading and processing magnetic skyrmions toward spintronic applications

Journal of physics. Condensed matter, 2020-04, Vol.32 (14), p.143001-143001

2020

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Spintronics for Energy- Efficient Computing: An Overview and Outlook

Proceedings of the IEEE, 2021-08, Vol.109 (8), p.1398-1417

2021

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Exploiting Carbon Nanotube FET and Magnetic Tunneling Junction for Near-Memory-Computing Paradigm

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1975-1979

2021

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Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

Nature communications, 2018-02, Vol.9 (1), p.671-7, Article 671

2018

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Ultrafast Magnetization Manipulation Using Single Femtosecond Light and Hot‐Electron Pulses

Advanced materials (Weinheim), 2017-11, Vol.29 (42), p.1703474-n/a

2017

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Analytical Macrospin Modeling of the Stochastic Switching Time of Spin-Transfer Torque Devices

IEEE transactions on electron devices, 2015-01, Vol.62 (1), p.164-170

2015

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Voltage Controlled Magnetic Skyrmion Motion for Racetrack Memory

Scientific reports, 2016-03, Vol.6 (1), p.23164-23164, Article 23164

2016

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Long-distance propagation of short-wavelength spin waves

Nature communications, 2018-02, Vol.9 (1), p.738-8, Article 738

2018

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Calculation of intrinsic spin Hall conductivity by Wannier interpolation

Physical review. B, 2018-12, Vol.98 (21), p.1, Article 214402

2018

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Stateful Reconfigurable Logic via a Single-Voltage-Gated Spin Hall-Effect Driven Magnetic Tunnel Junction in a Spintronic Memory

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4295-4301

2017

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Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient

Nature communications, 2021-07, Vol.12 (1), p.4555-4555, Article 4555

2021

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Magnetic skyrmions for unconventional computing

Materials horizons, 2021-03, Vol.8 (3), p.854-868

2021

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Modeling and Exploration of the Voltage-Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications

IEEE transactions on nanotechnology, 2017-05, Vol.16 (3), p.387-395

2017

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Skyrmion-based artificial synapses for neuromorphic computing

Nature electronics, 2020-03, Vol.3 (3), p.148-155

2020

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Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques

Nature electronics, 2018-11, Vol.1 (11), p.582-588

2018

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Robust Ultra-Low Power Non-Volatile Logic-in-Memory Circuits in FD-SOI Technology

IEEE transactions on circuits and systems. I, Regular papers, 2017-04, Vol.64 (4), p.847-857

2017

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A Multilevel Cell STT-MRAM-Based Computing In-Memory Accelerator for Binary Convolutional Neural Network

IEEE transactions on magnetics, 2018-11, Vol.54 (11), p.1-5

2018

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Tuning the Dzyaloshinskii-Moriya interaction in Pt/Co/MgO heterostructures through the MgO thickness

Nanoscale, 2018-01, Vol.10 (25), p.12062-12067

2018

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A compact skyrmionic leaky-integrate-fire spiking neuron device

Nanoscale, 2018-01, Vol.10 (13), p.6139-6146

2018

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In-Memory Processing Paradigm for Bitwise Logic Operations in STT-MRAM

IEEE transactions on magnetics, 2017-11, Vol.53 (11), p.1-4

2017

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Compact Model of Dielectric Breakdown in Spin-Transfer Torque Magnetic Tunnel Junction

IEEE transactions on electron devices, 2016-04, Vol.63 (4), p.1762-1767

2016

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Reconfigurable Codesign of STT-MRAM Under Process Variations in Deeply Scaled Technology

IEEE transactions on electron devices, 2015-06, Vol.62 (6), p.1769-1777

2015

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Publisher Correction: Kagomerization of transition metal monolayers induced by two-dimensional hexagonal boron nitride

Nature communications, 2024-08, Vol.15 (1), p.7413-1, Article 7413

2024

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Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack

High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits

Skyrmion-electronics: writing, deleting, reading and processing magnetic skyrmions toward spintronic applications

Spintronics for Energy- Efficient Computing: An Overview and Outlook

Exploiting Carbon Nanotube FET and Magnetic Tunneling Junction for Near-Memory-Computing Paradigm

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

Ultrafast Magnetization Manipulation Using Single Femtosecond Light and Hot‐Electron Pulses

Analytical Macrospin Modeling of the Stochastic Switching Time of Spin-Transfer Torque Devices

Voltage Controlled Magnetic Skyrmion Motion for Racetrack Memory

Long-distance propagation of short-wavelength spin waves

Calculation of intrinsic spin Hall conductivity by Wannier interpolation

Stateful Reconfigurable Logic via a Single-Voltage-Gated Spin Hall-Effect Driven Magnetic Tunnel Junction in a Spintronic Memory

Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient

Magnetic skyrmions for unconventional computing

Modeling and Exploration of the Voltage-Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications

Skyrmion-based artificial synapses for neuromorphic computing

Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques

Robust Ultra-Low Power Non-Volatile Logic-in-Memory Circuits in FD-SOI Technology

A Multilevel Cell STT-MRAM-Based Computing In-Memory Accelerator for Binary Convolutional Neural Network

Tuning the Dzyaloshinskii-Moriya interaction in Pt/Co/MgO heterostructures through the MgO thickness

A compact skyrmionic leaky-integrate-fire spiking neuron device

In-Memory Processing Paradigm for Bitwise Logic Operations in STT-MRAM

Compact Model of Dielectric Breakdown in Spin-Transfer Torque Magnetic Tunnel Junction

Reconfigurable Codesign of STT-MRAM Under Process Variations in Deeply Scaled Technology

Publisher Correction: Kagomerization of transition metal monolayers induced by two-dimensional hexagonal boron nitride

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