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A study of soft and hard breakdown - Part I: Analysis of statistical percolation conductance

IEEE transactions on electron devices, 2002-02, Vol.49 (2), p.232-238

2002

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A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling

IEEE transactions on electron devices, 2002-02, Vol.49 (2), p.239-246

2002

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Understanding the limits of ultrathin SiO2 and Si-O-N gate dielectrics for sub-50 nm CMOS

Microelectronic engineering, 1999-09, Vol.48 (1-4), p.25-30

1999

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Gate dielectric breakdown: A focus on ESD protection

2004 IEEE International Reliability Physics Symposium. Proceedings, 2004, p.399-404

2004

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MBE growth and properties of Fe3(Al,Si) on GaAs(100)

Journal of crystal growth, 1991-05, Vol.111 (1-4), p.984-988

1991

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Precursor ion damage and angular dependence of single event gate rupture in thin oxides

IEEE transactions on nuclear science, 1998-12, Vol.45 (6), p.2509-2518

1998

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High temperature performance of three-quantum-well vertical-cavity top-emitting lasers

Electronics letters, 1991-01, Vol.27 (5), p.457-458

1991

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Soft breakdown at all positions along the N-MOSFET

Microelectronic engineering, 2001-11, Vol.59 (1), p.17-23

2001

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Ultra-thin gate oxide reliability projections

Solid-state electronics, 2002-03, Vol.46 (3), p.321-328

2002

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Progress toward 10 nm CMOS devices

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217), 1998, p.615-618

1998

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Understanding the limits of ultrathin SiO 2 and SiON gate dielectrics for sub-50 nm CMOS

Microelectronic engineering, 1999, Vol.48 (1), p.25-30

1999

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Electron microscopy of the ordered boron 2 × 1 structure buried in crystalline silicon

Applied surface science, 1995, Vol.84 (4), p.413-418

1995

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Monolithic integration of photodetector with vertical cavity surface emitting laser

Electronics letters, 1991-08, Vol.27 (18), p.1630-1632

1991

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Fabrication of relaxed GeSi buffer layers on Si(100) with low threading dislocation density

Materials science & engineering. B, Solid-state materials for advanced technology, 1992-08, Vol.14 (3), p.332-335

1992

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High temperature and high frequency performance of gain-guided surface emitting lasers

Electronics letters, 1991-05, Vol.27 (11), p.915-916, Article 915

1991

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Voltages before and after HBM stress and their effect on dynamically triggered power supply clamps

2004 Electrical Overstress/Electrostatic Discharge Symposium, 2004, p.1-7

2004

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Explanation of stress-induced damage in thin oxides

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217), 1998, p.179-182

1998

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Rapid isothermal processing of Pt/Ti contacts to p-type III-V binary and related ternary materials

IEEE transactions on electron devices, 1992-01, Vol.39 (1), p.184-192

1992

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Buried, ordered structures: Boron in Si(111) and Si(100)

Journal of crystal growth, 1991-05, Vol.111 (1), p.838-842

1991

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Theory of "current-ratio" method for oxide reliability: proposal and validation of a new class two-dimensional breakdown-spot characterization techniques

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, 2005, p.4 pp.-407

2005

Volltextzugriff (PDF)

MBE growth and properties of Fe 3(Al,Si) on GaAs(100)

Journal of crystal growth, 1991, Vol.111 (1), p.984-988

1991

Volltextzugriff (PDF)

A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices

Microelectronic engineering, 1993-08, Vol.22 (1), p.69-72

1993

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Statistically independent soft breakdowns redefine oxide reliability specifications

Digest. International Electron Devices Meeting, 2002, p.151-154

2002

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Ultra-thin gate dielectrics: they break down, but do they fail?

International Electron Devices Meeting. IEDM Technical Digest, 1997, p.73-76

1997

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Continuous wave top surface emitting quantum well lasers using hybrid metal/semiconductor reflectors

Electronics letters, 1990, Vol.26 (19), p.1590-1592

1990

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A study of soft and hard breakdown - Part I: Analysis of statistical percolation conductance

A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling

Understanding the limits of ultrathin SiO2 and Si-O-N gate dielectrics for sub-50 nm CMOS

Gate dielectric breakdown: A focus on ESD protection

MBE growth and properties of Fe3(Al,Si) on GaAs(100)

Precursor ion damage and angular dependence of single event gate rupture in thin oxides

High temperature performance of three-quantum-well vertical-cavity top-emitting lasers

Soft breakdown at all positions along the N-MOSFET

Ultra-thin gate oxide reliability projections

Progress toward 10 nm CMOS devices

Understanding the limits of ultrathin SiO 2 and SiON gate dielectrics for sub-50 nm CMOS

Electron microscopy of the ordered boron 2 × 1 structure buried in crystalline silicon

Monolithic integration of photodetector with vertical cavity surface emitting laser

Fabrication of relaxed GeSi buffer layers on Si(100) with low threading dislocation density

High temperature and high frequency performance of gain-guided surface emitting lasers

Voltages before and after HBM stress and their effect on dynamically triggered power supply clamps

Explanation of stress-induced damage in thin oxides

Rapid isothermal processing of Pt/Ti contacts to p-type III-V binary and related ternary materials

Buried, ordered structures: Boron in Si(111) and Si(100)

Theory of "current-ratio" method for oxide reliability: proposal and validation of a new class two-dimensional breakdown-spot characterization techniques

MBE growth and properties of Fe 3(Al,Si) on GaAs(100)

A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices

Statistically independent soft breakdowns redefine oxide reliability specifications

Ultra-thin gate dielectrics: they break down, but do they fail?

Continuous wave top surface emitting quantum well lasers using hybrid metal/semiconductor reflectors

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