UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Totally relaxed GexSi1-x layers with low threading dislocation densities grown on Si substrates

Applied physics letters, 1991-08, Vol.59 (7), p.811-813

1991

Volltextzugriff (PDF)

Precursor ion damage and angular dependence of single event gate rupture in thin oxides

IEEE transactions on nuclear science, 1998-12, Vol.45 (6), p.2509-2518

1998

Volltextzugriff (PDF)

Gate oxide reliability projection to the sub-2 nm regime

Semiconductor science and technology, 2000-05, Vol.15 (5), p.455-461

2000

Volltextzugriff (PDF)

Soft breakdown at all positions along the N-MOSFET

Microelectronic engineering, 2001-11, Vol.59 (1), p.17-23

2001

Volltextzugriff (PDF)

A study of soft and hard breakdown - Part I: Analysis of statistical percolation conductance

IEEE transactions on electron devices, 2002-02, Vol.49 (2), p.232-238

2002

Volltextzugriff (PDF)

A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling

IEEE transactions on electron devices, 2002-02, Vol.49 (2), p.239-246

2002

Volltextzugriff (PDF)

Influence of surface reconstruction on the orientation of homoepitaxial silicon films

Physical review letters, 1990-08, Vol.65 (9), p.1128-1131

1990

Volltextzugriff (PDF)

Ultra-thin gate oxide reliability projections

Solid-state electronics, 2002-03, Vol.46 (3), p.321-328

2002

Volltextzugriff (PDF)

Low-temperature homoepitaxy on Si(111)

Applied physics letters, 1991-07, Vol.59 (2), p.204-206

1991

Volltextzugriff (PDF)

Si(100)-(2×1)boron reconstruction : self-limiting monolayer doping

Applied physics letters, 1990-12, Vol.57 (26), p.2779-2781

1990

Volltextzugriff (PDF)

Stress relaxation in Mo/Si multilayer structures

Applied physics letters, 1992-06, Vol.60 (25), p.3120-3122

1992

Volltextzugriff (PDF)

Electrical characterization of an ultrahigh concentration boron delta-doping layer

Applied physics letters, 1994-08, Vol.65 (6), p.737-739

1994

Volltextzugriff (PDF)

Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C

Journal of applied physics, 1991-01, Vol.69 (2), p.745-751

1991

Volltextzugriff (PDF)

Understanding the limits of ultrathin SiO2 and Si-O-N gate dielectrics for sub-50 nm CMOS

Microelectronic engineering, 1999-09, Vol.48 (1-4), p.25-30

1999

Volltextzugriff (PDF)

Monolithic integration of photodetector with vertical cavity surface emitting laser

Electronics letters, 1991-08, Vol.27 (18), p.1630-1632

1991

Volltextzugriff (PDF)

Au/Pt/Ti contacts to p-In0.53Ga0.47As and n-InP layers formed by a single metallization common step and rapid thermal processing

Journal of applied physics, 1990-08, Vol.68 (3), p.1123-1128

1990

Volltextzugriff (PDF)

MBE growth and properties of Fe3(Al,Si) on GaAs(100)

Journal of crystal growth, 1991-05, Vol.111 (1-4), p.984-988

1991

Volltextzugriff (PDF)

High temperature and high frequency performance of gain-guided surface emitting lasers

Electronics letters, 1991-05, Vol.27 (11), p.915-916, Article 915

1991

Volltextzugriff (PDF)

Pt/Ti/n-InP nonalloyed ohmic contacts formed by rapid thermal processing

Journal of applied physics, 1990-04, Vol.67 (8), p.3872-3875

1990

Volltextzugriff (PDF)

Selective electroless copper metallization of palladium silicide on silicon substrates

Applied physics letters, 1991-12, Vol.59 (26), p.3449-3451

1991

Volltextzugriff (PDF)

Ohmic contacts to heavily carbon-doped p-AlxGa1-xAs

Journal of applied physics, 1991-02, Vol.69 (4), p.2276-2279

1991

Volltextzugriff (PDF)

Microstructure and contact resistance temperature dependence of Pt/Ti ohmic contact to Zn-doped GaAs

Journal of applied physics, 1990-10, Vol.68 (8), p.4133-4140

1990

Volltextzugriff (PDF)

Temperature dependence of the resistance in the Pt/Ti nonalloyed ohmic contacts to p-InAs induced by rapid thermal processing

Journal of applied physics, 1990-10, Vol.68 (8), p.4141-4150

1990

Volltextzugriff (PDF)

Continuous wave top surface emitting quantum well lasers using hybrid metal/semiconductor reflectors

Electronics letters, 1990, Vol.26 (19), p.1590-1592

1990

Volltextzugriff (PDF)

High temperature performance of three-quantum-well vertical-cavity top-emitting lasers

Electronics letters, 1991-01, Vol.27 (5), p.457-458

1991

Volltextzugriff (PDF)

1 – 25 von 955

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(826)
Mit Volltextzugriff
(722)

Publikationsform

2 weitere anzeigen...

Weniger anzeigen...

Sprache

1 weiteren anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(565)
Life Sciences & Biomedicine
(434)
Humans
(337)
Biological And Medical Sciences
(228)
Male
(197)
Female
(190)
Medical Sciences
(190)
Middle Aged
(136)
Adult
(130)
Physical Sciences
(107)
Physics
(101)
Aged
(90)
Animals
(85)
Technology
(63)
Exact Sciences And Technology
(60)
Surgery
(60)
Physics, Applied
(54)
Adolescent
(53)
General & Internal Medicine
(53)
Fundamental And Applied Biological Sciences. Psychology
(45)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

Neurosurgery
(44)
Irish Journal Of Medical Science
(34)
Applied Physics Letters
(29)
Chest
(24)
Transplantation
(19)
Physical Review Letters
(18)
American Journal Of Transplantation
(11)
Journal Of Applied Physics
(10)
Mrs Proceedings
(10)
Nature
(10)

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(4)

Menü

Weitere Dienste

Einstellungen

Totally relaxed GexSi1-x layers with low threading dislocation densities grown on Si substrates

Precursor ion damage and angular dependence of single event gate rupture in thin oxides

Gate oxide reliability projection to the sub-2 nm regime

Soft breakdown at all positions along the N-MOSFET

A study of soft and hard breakdown - Part I: Analysis of statistical percolation conductance

A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling

Influence of surface reconstruction on the orientation of homoepitaxial silicon films

Ultra-thin gate oxide reliability projections

Low-temperature homoepitaxy on Si(111)

Si(100)-(2×1)boron reconstruction : self-limiting monolayer doping

Stress relaxation in Mo/Si multilayer structures

Electrical characterization of an ultrahigh concentration boron delta-doping layer

Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C

Understanding the limits of ultrathin SiO2 and Si-O-N gate dielectrics for sub-50 nm CMOS

Monolithic integration of photodetector with vertical cavity surface emitting laser

Au/Pt/Ti contacts to p-In0.53Ga0.47As and n-InP layers formed by a single metallization common step and rapid thermal processing

MBE growth and properties of Fe3(Al,Si) on GaAs(100)

High temperature and high frequency performance of gain-guided surface emitting lasers

Pt/Ti/n-InP nonalloyed ohmic contacts formed by rapid thermal processing

Selective electroless copper metallization of palladium silicide on silicon substrates

Ohmic contacts to heavily carbon-doped p-AlxGa1-xAs

Microstructure and contact resistance temperature dependence of Pt/Ti ohmic contact to Zn-doped GaAs

Temperature dependence of the resistance in the Pt/Ti nonalloyed ohmic contacts to p-InAs induced by rapid thermal processing

Continuous wave top surface emitting quantum well lasers using hybrid metal/semiconductor reflectors

High temperature performance of three-quantum-well vertical-cavity top-emitting lasers

Suchergebnisse filtern