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Medication backup: attitudes and practices of psychiatrists and residents

Psychiatric services (Washington, D.C.), 1997-04, Vol.48 (4), p.536-538

1997

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Annealing of implantation damage and redistribution of impurities in SiC using a pulsed excimer laser

Applied physics letters, 1990-02, Vol.56 (6), p.530-532

1990

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A shallow junction submicrometer PMOS process without high temperature anneals

IEEE electron device letters, 1988-10, Vol.9 (10), p.542-544

1988

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Thin-base bipolar transistor fabrication using gas immersion laser doping

IEEE electron device letters, 1989-06, Vol.10 (6), p.260-263

1989

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Fabrication and characterization of selectively grown Si1-xGex/Si p+/n heterojunctions using pulsed laser induced epitaxy and gas immersion laser doping

Applied surface science, 1993-05, Vol.69 (1-4), p.121-126

1993

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An excimer-laser-based nanosecond thermal diffusion technique for ultra-shallow pn junction fabrication

Microelectronic engineering, 1993, Vol.20 (1), p.107-130

1993

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Fabrication of patterned GexSi1-x/Si layers by pulsed laser induced epitaxy

Applied physics letters, 1991-05, Vol.58 (19), p.2150-2152

1991

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Impurity distribution and electrical characteristics of boron-doped Si1-xGex/Si p+/N heterojunction diodes produced using pulsed UV-laser-induced epitaxy and gas-immersion laser doping

Applied physics. A, Solids and surfaces, 1993-07, Vol.57 (1), p.91-95

1993

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Pruritus associated with nocturnal wakenings: Organic or psychogenic?

Journal of the American Academy of Dermatology, 1989-09, Vol.21 (3), p.479-484

1989

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Characterization of reverse leakage components for ultrashallow p+/n diodes fabricated using gas immersion laser doping

IEEE electron device letters, 1996-10, Vol.17 (10), p.461-463

1996

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Defect-induced Schottky barrier height modification by pulsed laser melting of GaAs

Applied physics letters, 1989-08, Vol.55 (6), p.580-582

1989

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Formation of InxGa1-xAs/GaAs heteroepitaxial layers using a pulsed laser driven rapid melt-solidification process

Applied physics letters, 1990-05, Vol.56 (19), p.1844-1846

1990

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Crystallinity, strain, and thermal stability of heteroepitaxial Si1-xGex/Si (100) layers created using pulsed laser induced epitaxy

Applied physics letters, 1992-08, Vol.61 (7), p.769-771

1992

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A Study of Interdiffusion, Crystallinity, Strain and Thermal Stability of Si1−xGex/Si Created Using Pulsed Laser Induced Epitaxy (PLIE)

MRS proceedings, 1992, Vol.263

1992

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Pruritus in psoriasis. A prospective study of some psychiatric and dermatologic correlates

Archives of dermatology (1960), 1988-07, Vol.124 (7), p.1052

1988

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On the treatment of arterial circulation disorders with Lioftal

Medizinische Welt, 1968-02, Vol.9, p.460

Weiner, K H

1968

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Low-temperature fabrication of p+-n diodes with 300-Å junction depth

IEEE electron device letters, 1992-07, Vol.13 (7), p.369-371

1992

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Resistless, area-selective ultrashallow P +/ N junction fabrication using projection gas immersion laser doping

Applied physics letters, 1996-04, Vol.68 (17), p.2320-2322

1996

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Ultrashallow contact formation in low-power electronic circuits using patterned high-power XeCl lasers

Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178), 1998, p.348

Weiner, K.H.

1998

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Über die Identifizierung von enzymatisch gebildetem Hämin aus Protoporphyrin und Eisen

Hoppe-Seyler's Zeitschrift für Physiologische Chemie, 1962-01, Vol.328 (Jahresband), p.269-271

1962

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Low-temperature fabrication of p(+)-n diodes with300-A junction depth

IEEE electron device letters, 1992-07, Vol.13 (7), p.369-371

1992

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Fabrication of patterned Ge x /Si1− x /Si layers by pulsed laser induced epitaxy

Applied physics letters, 1991-05, Vol.58 (19), p.2150-2152

1991

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An excimer-laser-based nanosecond thermal diffusion technique for ultra-shallow pn junction fabrication: Laser processing in microelectronics

Microelectronic engineering, 1993, Vol.20 (1-2), p.107-130

1993

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ACTIVITY CHANGES IN GLUTAMIC-PYRUVATE TRANSAMINASE AND GLUTAMIC-OXALACETIC TRANSAMINASE IN DIFFERENT ORGANS DUE TO OXYGEN DEFICIENCY

Internationale Zeitschrift für angewandte Physiologie einschliesslich Arbeitsphysiologie, 1964-02, Vol.20, p.195-201

1964

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Formation of In x Ga1− x As/GaAs heteroepitaxial layers using a pulsed laser driven rapid melt-solidification process

Applied physics letters, 1990-05, Vol.56 (19), p.1844-1846

1990

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Medication backup: attitudes and practices of psychiatrists and residents

Annealing of implantation damage and redistribution of impurities in SiC using a pulsed excimer laser

A shallow junction submicrometer PMOS process without high temperature anneals

Thin-base bipolar transistor fabrication using gas immersion laser doping

Fabrication and characterization of selectively grown Si1-xGex/Si p+/n heterojunctions using pulsed laser induced epitaxy and gas immersion laser doping

An excimer-laser-based nanosecond thermal diffusion technique for ultra-shallow pn junction fabrication

Fabrication of patterned GexSi1-x/Si layers by pulsed laser induced epitaxy

Impurity distribution and electrical characteristics of boron-doped Si1-xGex/Si p+/N heterojunction diodes produced using pulsed UV-laser-induced epitaxy and gas-immersion laser doping

Pruritus associated with nocturnal wakenings: Organic or psychogenic?

Characterization of reverse leakage components for ultrashallow p+/n diodes fabricated using gas immersion laser doping

Defect-induced Schottky barrier height modification by pulsed laser melting of GaAs

Formation of InxGa1-xAs/GaAs heteroepitaxial layers using a pulsed laser driven rapid melt-solidification process

Crystallinity, strain, and thermal stability of heteroepitaxial Si1-xGex/Si (100) layers created using pulsed laser induced epitaxy

A Study of Interdiffusion, Crystallinity, Strain and Thermal Stability of Si1−xGex/Si Created Using Pulsed Laser Induced Epitaxy (PLIE)

Pruritus in psoriasis. A prospective study of some psychiatric and dermatologic correlates

On the treatment of arterial circulation disorders with Lioftal

Low-temperature fabrication of p+-n diodes with 300-Å junction depth

Resistless, area-selective ultrashallow P +/ N junction fabrication using projection gas immersion laser doping

Ultrashallow contact formation in low-power electronic circuits using patterned high-power XeCl lasers

Über die Identifizierung von enzymatisch gebildetem Hämin aus Protoporphyrin und Eisen

Low-temperature fabrication of p(+)-n diodes with300-A junction depth

Fabrication of patterned Ge x /Si1− x /Si layers by pulsed laser induced epitaxy

An excimer-laser-based nanosecond thermal diffusion technique for ultra-shallow pn junction fabrication: Laser processing in microelectronics

ACTIVITY CHANGES IN GLUTAMIC-PYRUVATE TRANSAMINASE AND GLUTAMIC-OXALACETIC TRANSAMINASE IN DIFFERENT ORGANS DUE TO OXYGEN DEFICIENCY

Formation of In x Ga1− x As/GaAs heteroepitaxial layers using a pulsed laser driven rapid melt-solidification process

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